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In-situ Measurements and Thermo-mechanical Simulation of Ti-6Al-4V Laser Solid Forming Processes
摘要： Residual stresses and distortions are two technical obstacles for popularizing the Additive Manufacturing (AM) technology. The evolution of the stresses in AM components during the thermal cycles of the metal depositing process is not yet clear, and more accurate in-situ measurements are necessary to calibrate and validate the numerical tools developed for its simulation. In this work a fully coupled thermo-mechanical analysis to simulate the Laser Solid Forming (LSF) process is carried out. At the same time, an exhaustive experimental campaign is launched to measure the temperature evolution at different locations, as well as the distortions and both the stress and strain fields. The thermal and mechanical responses of single-wall coupons under different process parameters are recorded and compared with the numerical models. Good agreement between the numerical results and the experimental measurements is obtained. Sensitivity analysis demonstrates that the AM process is significantly affected by the laser power and the feeding rate, while poorly influenced by the scanning speed.
关键词： Numerical simulation,Laser Solid Forming (LSF),Thermo-mechanical analysis,Additive manufacturing (AM),In-situ measurements of residual stresses
更新于2025-11-28 14:24:20
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Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition
摘要： Films of silicon nitride SiNx, obtained by plasma-enhanced chemical vapor deposition from the monosilane SiH4 and ammonia NH3 gases, are widely used in microelectronics and micro- and nanoelectromechanical systems. Residual mechanical stresses and film composition are important characteristics for many applications. The properties of SiNx films, particularly mechanical stresses and composition, depend largely on the conditions of production, e.g., the ratio of the reacting gas flow rates, the composition of the gas mixture, the power and frequency of the plasma generator, and the temperature and pressure during deposition. Despite the great volume of works on the subject, data regarding the dependence of the properties and composition of SiNx films on the conditions of production remain sparse. This work considers the effect the ratio of the reacting gas flow rates has on the mechanical stresses and composition of silicon nitride films SiNx obtained by plasma-enhanced chemical vapor deposition from gaseous mixtures of SiH4 monosilane and NH3 ammonia using low-frequency plasma. It is found that when the ratio of the gas flow rates of SiH4 and NH3 is raised from 0.016 to 0.25, the compressive mechanical stresses are reduced by 31%, the stoichiometric coefficient falls from 1.40 to 1.20, the refractive index rises from 1.91 to 2.08, the concentration of N–H bonds is reduced by a factor of 7.4, the concentration of Si–H bonds grows by a factor of 8.7, and the concentration of hydrogen atoms is reduced by a factor of 1.5. These results can be used for the controlled production of SiNx films with such specified characteristics as residual mechanical stresses, refractive index, stoichiometric coefficient, and the concentration of hydrogen-containing bonds.
关键词： mechanical stresses,optical profilometry,films of PECVD silicon nitride SiNx,IR Fourier spectroscopy
更新于2025-11-14 15:18:02
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Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing
摘要： High-quality AlN templates fabricated by sputtering-deposition and post-deposition high-temperature annealing have great potential for deep ultraviolet light-emitting device applications. In this work, we fabricated AlN films on 6H-SiC substrates by sputtering and face-to-face annealing and characterized the structural quality of the AlN films before and after annealing. As reported in previous studies, to accomplish high-quality AlN films on SiC substrates using conventional methods, such as molecular beam epitaxy or metalorganic vapor phase epitaxy (MOVPE), it is important to grow the AlN on the SiC coherently. However, in this work, although the annealed AlN films were fully relaxed from the SiC substrates, or even had tensile strain, the AlN films indicated high crystallinity. The X-ray rocking curve full width at half maximum (XRC-FWHM) values of the 200-nm-thick annealed AlN film were 17 and 246 arcsec for the AlN (0002) and (10–12) diffraction, respectively. Though the annealed AlN film indicated rough surfaces with bunched step structures, the surface morphology was remarkably improved by MOVPE growth and clear atomic step-and-terrace structures were formed. The XRC-FWHM values of the MOVPE-grown AlN were 90 and 239 arcsec for the AlN (0002) and (10–12) diffraction, respectively.
关键词： A1. Stresses,A1. Atomic force microscopy,B1. Nitrides,B2. Semiconducting III-V materials,A1. X-ray diffraction
更新于2025-09-23 15:22:29
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Strain control of GaN grown on Si substrates using an AlGaN interlayer
摘要： To suppress wafer bowing and crack generation of GaN on Si substrates, we investigated the effects of the Al content and thickness of the AlGaN interlayer on the compressive strain in the overlying GaN layer theoretically and experimentally. In the simulation, AlGaN relaxes gradually over the critical thickness. Therefore, the relaxation ratio of AlGaN at the top surface can be defined as a function of Al content and thickness. Too high Al content or too thick AlGaN interlayer induced too large initial strain in the upper GaN layer, which caused rapid and succeeding gradual relaxation, i.e., decrease of strain, of the GaN layer during growth because of generation of threading dislocations. Conversely, low Al content or thin AlGaN interlayer could induce constant but only small strain in the GaN layer. Therefore, the ideal relaxation ratio of the AlGaN surface exists to apply the maximal constant compressive strain in the GaN layer. The relaxation ratios of AlGaN interlayers determined in experiments were much smaller than those calculated in the simulation. Although the measured compressive strain in the GaN layer was smaller than expected, its decrease rate was small when grown on AlGaN interlayers with an almost ideal relaxation ratio.
关键词： Computer simulation,Characterization,Metalorganic vapor phase epitaxy,Stresses,Growth models,Nitrides
更新于2025-09-23 15:22:29
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[IEEE 2017 International Renewable and Sustainable Energy Conference (IRSEC) - Tangier (2017.12.4-2017.12.7)] 2017 International Renewable and Sustainable Energy Conference (IRSEC) - Thermomechanical Investigation of PV Panels Behaviour under NOCT Conditions
摘要： Numerous works on the enhancement of photovoltaic cells’ efficiency can been found in the literature. However, studies related to its durability are limited. For instance, solar radiation induced internal thermal stresses on the structure of photovoltaic (PV) panels has received little attention. These effects cannot be ignored when analyzing the panel’s durability. The internal stresses are difficult to measure since a PV panel is a complex structure composed by different layers, which causes a non-uniform distribution of the temperature inside the panel. In this work, fully coupled thermo-mechanical finite element simulations were performed with the commercial code ABAQUS/CAE to estimate these stresses. Temperature variations and local stress states are estimated throughout the PV panel thickness under nominal operating conditions.
关键词： thermo-mechanical stresses,FE simulation,silicon solar cells,PV panels
更新于2025-09-23 15:22:29
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Numerical Analysis of Thermal Stress in Semi-Transparent Oxide Crystals Grown by Czochralski and EFG Methods
摘要： Crystal growth of oxides is generally difficult since large curvatures of the growth interface in these systems generate high thermal stress, dislocations and crystal cracking. Three-dimensional numerical modeling is applied to investigate thermal stress distribution in sapphire and langatate La3Ta0.5Ga5.5O14 (LGT) semi-transparent crystals grown by Czochralski (Cz) and Edge-defined Film-fed Growth (EFG) techniques. The analysis of thermal stress distribution in a sapphire ingot grown in a Czochralski furnace shows high von Mises stresses distributed almost symmetrically on large areas in the crystal. Thermal stress computations for piezoelectric langatate crystals grown in a Czochralski configuration show non-symmetrical von Mises distribution with higher stress on one side of the ingot. These numerical results are in agreement with experimental results showing non-symmetrical cracking at the outer surface of the crystal. 3D modeling of multi-die EFG growth of white sapphire ribbons shows that the von Mises stress is almost constant when the number of ribbons is increased from two to ten. Two models are applied to simulate the internal radiative heat transfer in the sapphire crystals: P1 approximation and the Rosseland radiation model. Numerical results show that applying Rosseland formula introduces significant errors in temperature field calculations especially in the case of the EFG configuration.
关键词： computer simulation,Czochralski,sapphire,single crystal growth,stresses
更新于2025-09-23 15:22:29
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Experimental Study of Thermomechanical Processes: Laser Welding and Melting of a Powder Bed
摘要： In this study, an experimental approach was developed to analyze and better understand the laser welding and melting of a powder bed process. Different optical diagnostics tools (high-speed camera, infrared camera, pyrometer, etc.) were applied to measure different physical quantities (molten pool morphology, temperature ?eld, residual stresses, and distortions). As a result, measurements during the laser welding process facilitated the building of a database of experimental results (experimental benchmarks). The study of the melting of a powder bed enabled a better understanding of the physics related to the formation and behavior of the molten pool. These results can be used by researchers to improve and validate numerical simulations of these processes.
关键词： optical diagnostics,molten pool,melting of a powder bed,residual stresses,laser welding,temperature field
更新于2025-09-23 15:21:01
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Taguchi Grey Relationalapproach Foroptimizing Process Parameters of Laser Peeningontitanium Alloy to Induce Enhanced Compressive Stress Based on Finite Element Simulation
摘要： Laser Shock Peening (LSP) turned out the most efficient surface engineering process for advanced materials to induce beneficial deep compressive residual stress which helps in improving mechanical, fatigue properties and surface damage resistance. But, analyzing the non-uniform distribution of residual stresses in the treated sample with XRD is much time taking and costly process. This problem can be resolved with LSP finite element numerical simulation model which is feasible with the realistic experimental process. The FE model allows the user to control the laser parameters in order to achieve the optimal level of all controllable parameters. The present study is intended to analyze and optimize the influence of laser processing parameters assists in inducing the residual compressive stress with minimal surface deformation.A Ti6Al4V material model with Johnson-Cook’s visco-elastic-plastic material behaviour law is prepared for LSP simulation. And Gaussian pressure profile is utilized for uniform loading of the targeted zone for the proposed model. Taguchi Grey Relational Analysis (TGRA) with L27 orthogonal array is applied to LSP simulation, and the results were analyzed with consideration of multiple response measures. It is noted that surface deformation is increased with the rise in a number of laser shots and pressure pulse duration. Maximum compressive residual stresses are falling for higher levels of laser spot diameter, Laser spot overlap and Laser Power density. The correlation is observed between FE simulation and published results. The optimal set of process parameters are obtained for improving the LSP on Ti alloys.
关键词： Grey Relational Analysis (GRA),Taguchi Technique,Laser Shock Peening (LSP),Finite Element Method (FEM),Residual Stresses
更新于2025-09-23 15:21:01
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Neural networks for trajectory evaluation in direct laser writing
摘要： Material shrinkage commonly occurs in additive manufacturing and compromises the fabrication quality by causing unwanted distortions or residual stresses in fabricated parts. Even though it is known that the resulting deformations and stresses are highly dependent on the writing trajectory, no effective strategy for choosing suitable trajectories has been reported to date. Here, we present a path to achieve this goal in direct laser writing, an additive manufacturing method based on photopolymerization that commonly suffers from strong shrinkage-induced effects. First, we introduce a method for measuring the shrinkage of distinct direct laser written lines. We then introduce a semi-empirical numerical model to capture the interplay of sequentially polymerized material and the resulting macroscopic effects. Finally, we implement an artificial neural network to evaluate given laser trajectories in terms of the resulting part quality. The presented approach proves feasibility of using artificial neural networks to assess the quality of 3D printing trajectories and thereby demonstrates a potential route for reducing the impact of material shrinkage on 3D printed parts.
关键词： Advanced manufacturing,Residual stresses,Artificial neural networks,Direct laser writing
更新于2025-09-23 15:21:01
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Structural and electronic properties of III-nitride nanoribbons
摘要： The structural and electronic properties of group III-nitride nanoribbons have been systematically investigated using density functional theory calculations. We computed the edge stresses and edge moduli for III-nitride nanoribbons with a variety of widths and edge terminations, including bare, fully as well as partially hydrogen-passivated edges. In addition, fluorine-passivated zigzag-terminated nanoribbons were also investigated. Our results show that all edges of III-nitride nanoribbons are subjected to compressive stresses. The magnitude of edge stresses strongly depends on the edge terminations. Compressive stress states of nanoribbon edges result in drastically different edge distortions and edge elastic moduli, depending again on the edge configurations. Finally, the electronic band structures are calculated for all zigzag-terminated nanoribbons. We found only fully-passivated nanoribbons are semiconductors with indirect bandgaps. These results suggest that edge terminations significantly affect the edge elastic properties as well as the electronic properties of group III-nitride nanoribbons and their applications.
关键词： edge stresses,III-nitride nanoribbons,edge moduli,electronic band structures,density functional theory
更新于2025-09-23 15:21:01