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Impact of molarity on structural, optical, morphological and electrical properties of copper oxide thin films prepared by cost effective jet nebulizer spray pyrolysis technique
摘要： Copper oxide (CuO) thin films were prepared by simple and cost effective jet nebulizer spray pyrolysis method with different molar concentration 0.1, 0.2 and 0.3 M named as J1, J2 and J3 respectively. The impact of molarity on structural, optical, morphological and electrical of properties of CuO thin film was studied. The structural studies confirmed that the prepared CuO thin films are monoclinic crystal structure matching with standard JCPDS card No. 89-5899. The thickness of CuO thin films determined by surface profilometer found to be increasing while increasing molar concentration. The optical energy band gaps were determined using Kulbelka–Munk (K–M) method are found to be 2.1 eV, 1.9 eV and 1.8 eV for J1, J2 and J3 respectively. The morphological properties and chemical composition of CuO thin film were investigated via field-emission scanning electron microscope (FESEM) and energy dispersive analysis from X-ray spectroscopy (EDAX). According to FESEM all the prepared CuO thin films are well covered and adhered to the substrate with good homogeneity and EDAX spectra confirms the presence of copper (Cu) and oxygen (O). The adhesion strength has been determined in accordance with test method D3330 using scotch tape test. The electrical conductivity of CuO thin films were investigated. The maximum conductivity value of the CuO thin film is observed 2.75 × 10?8 S/cm.
关键词： Thin films,Molar concentration,Copper oxide,Morphological properties,Jet nebulizer spray pyrolysis,Structural properties,Optical properties,Electrical properties
更新于2025-09-09 09:28:46
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Influence of Sm and Nb on the structural, electric, magnetic and magneto-electric properties of BaTiO3-Li0.5Fe2.5O4 composite ceramics grown by the conventional solid state technique
摘要： The Sm and Nb doped BaTiO3-Li0.5Fe2.5O4 composite ceramics having chemical formulae (90)BaTi(1?2x)NbxSmxO3 + (10) Li0.5Fe2.5O4 (x = 0, 0.05 and 0.1) were synthesized using conventional solid state technique. The structural, morphological, magnetic, dielectric, ferroelectric and magneto-electric properties of composites have been studied. The XRD measurement reveals the absence of peaks pertaining to impurities and strongly confirms the high crystalline nature of all the composites. From FESEM images, the average grain size of composites increases with increase in the concentration of Nb and Sm. The VSM studies confirm the soft magnetic nature of all the composites. The dielectric measurements confirm the increase in the transition temperature (Tc) of the BTL composite with an increase in the concentration of Nb and Sm. The P–E studies confirm that the ferroelectric nature of the BTL composite softens after doping Nb and Sm in it. The ME voltage coefficient value confirms the uniform growth of grains in all the composites and reveals a strong interaction between ferroelectric and magnetic orders.
关键词： magneto-electric properties,BaTiO3-Li0.5Fe2.5O4,electric properties,magnetic properties,composite ceramics,Sm and Nb doping,structural properties
更新于2025-09-09 09:28:46
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Substrate temperature dependent variation in the properties of cadmium telluride thin films deposited on glass
摘要： The present study relates to the variation in properties of cadmium telluride (CdTe) thin films deposited via electron beam and thermal vacuum evaporation methods at two different substrate temperatures. The influence of substrate temperature on structural, morphological, optical and electrical properties of CdTe thin films is investigated. For structural characterization, grazing incidence X-ray diffraction technique is used which revealed that thin films deposited at 200 °C temperature are more crystalline in nature as compare to the room temperature. The parameters such as average crystallite size (D), lattice strain (ε), number of crystallites per unit area (N) and texture coefficient TC (hkl) were calculated for both types of synthesized CdTe thin films. Surface morphology of thin films was recorded using scanning electron microscopy and found to be homogeneous in nature. The optical studies carried out using UV–Visible Spectrophotometer and Photoluminescence shown a decrease in band gap values for both electron beam and thermally deposited thin films samples at 200 °C substrate temperature. Electrical measurements recorded using two probes method showed the maximum value of current for CdTe thin films deposited by electron beam evaporation method at 200 °C substrate temperature.
关键词： Thermal vacuum evaporation,Optical properties,Thin films,Electron beam evaporation,Electrical properties,Structural properties,Substrate temperature,Cadmium telluride
更新于2025-09-09 09:28:46
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Tuning the optical properties of ZnO:Cd by doping La and Y
摘要： Zinc oxide doped with Cadmium and rare earth elements synthesized by solgel auto combustion route is reported in this work. The studies have been carried out to analyze the structural, morphological and optical properties of Cd doped ZnO and rare earth doped ZnCdO. The XRD analysis reveals that the addition of rare earth impurity decreases the particle size of ZnCdO. La doped ZnCdO has the least particle size among the samples of ZnCdO and rare earth doped ZnCdO. The morphological changes due to the addition of rare earth impurities have been found. Samples of La doped ZnCdO shows a pillar like morphology. The hexagonal structures are prominently seen in the SEM micrographs of the samples of ZnCdO. The UV-Visible spectral analyses show that the bandgap reduces when ZnCdO is doped with the rare earth impurities. The photoluminescence spectra show the broad spectrum in visible region exhibited by ZnO and a scanty UV emission. The UV emission of rare earth doped samples decreases due to the destruction in the crystal structure. The rare earth doped ZnCdO shows a small peak in green emission that decreases when rare earth impurities are doped. There is a uniform spectral response other than a small Gaussian like green peak. The overall analyses show that the samples can be used in optoelectronic applications to work in the visible region.
关键词： rare earth elements,structural properties,optical properties,UV-Visible spectral analyses,Cadmium,SEM micrographs,photoluminescence spectra,XRD analysis,Zinc oxide,solgel auto combustion,morphological properties
更新于2025-09-09 09:28:46
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Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films
摘要： This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si (100) and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of (002) crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.
关键词： ZnO,Annealing Temperature,Thin Films,Optical Properties,RF Sputtering,Structural Properties
更新于2025-09-09 09:28:46
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Morphology and Structure Properties of Boron-doped Diamond Films Prepared by Hot Cathode Direct Current Plasma Chemical Vapor Deposition
摘要： Boron-doped diamond (BDD) films were deposited by hot cathode direct current plasma chemical vapor deposition (HCDC-PCVD) according to various mixture ratios of CH4/H2/B(OCH3)3 gas. The Raman performances and surface morphologies of the BDD films were then characterized by Raman spectroscopy and scanning electron microscopy (SEM). Results indicated that the flow rate of B(OCH3)3 had marked effects on the growth characteristics of the produced boron-doped diamond films. The presence and concentration of the doped boron atoms significantly altered both the surface morphologies and structures of the diamond films. With increasing flow rate of B(OCH3)3, the crystal grain surfaces became smooth as visible under SEM. The B-doping levels in these films increased from 1.75 × 1019 cm-3 to a maximum of 2.4 × 1021 cm-3, estimated from the Raman spectra.
关键词： structural properties,boron-doped diamond (BDD) films,hot cathode direct current PCVD (HCDC-PCVD)
更新于2025-09-09 09:28:46
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Desorption of Te capping layer from ZnTe (100): Auger spectroscopy, low-energy electron diffraction and scanning tunneling microscopy
摘要： The influence of the annealing temperature to desorb a protective Te capping layer of the zinc telluride (ZnTe (100)) surface was investigated. The surface reconstruction of the ZnTe (100) upon the removal of a Te capping layer grown by the molecular beam epitaxy was characterized by different methods. Auger spectroscopy brought out the chemical composition of the surface before and after annealing; the Low-energy electron diffraction (LEED) gave information about the crystallographic structure. The surface crystallographic configurations of tellurium Te (c (2x2)) and Te (c (2x1)) are confirmed by scanning tunneling microscopy (STM). Such a study reveals a phase transition from a rich-Te to a poor-Te surface as the annealing temperature increases.
关键词： structural properties,optoelectronics,Zinc Tellure,semiconductors,solar cells
更新于2025-09-09 09:28:46
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Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11$$\bar {2}$$0) Sapphire
摘要： The structural properties of GaN(0001) heteroepitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) on a-plane (11 0) sapphire substrates are investigated by X-ray diffractometry. Anisotropy of the rocking-curve width for the symmetric (0004) and asymmetric {11 4} and {10 5} reflections of gallium nitride upon rotation of the sample is observed. A comparison of the anisotropy of the rocking-curve width for GaN(0001)/Al2O3(11 0) layers with two different variants of in-plane orientation relationships suggests that the anisotropy of the structural properties is independent of the thermoelastic stress arising upon cooling the heterostructure.
关键词： structural properties,MOVPE,anisotropy,sapphire,GaN,X-ray diffractometry
更新于2025-09-09 09:28:46
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Influence of low energy (keV) negative Li ion implantation on properties of electrochemically induced scaffold-based growth of PbSe nanowires
摘要： In the present work, PbSe nanowires were synthesized using restrictive template-based electrodeposition technique and implanted under vacuum with 200 keV negative Li ion at different fluences. The morphology of the nanowires was characterized by field emission scanning electron microscopy (FESEM). X-ray diffraction patterns confirmed the same crystal structure for pristine and ion implanted samples besides change in intensity of diffraction peaks were observed. Crystallite size was evaluated using modified Scherrer method and Williamson–Hall methods (UDM and USDM). Stress, strain, stacking fault, dislocation density and lattice parameters were evaluated for the pristine and ion implanted samples. UV–Vis spectroscopy results showed decrease in optical bandgap with increasing ion fluence. Photoluminescence spectra manifested decrease in emission peak with increasing ion fluence. The I–V graphs of the nanowires depicted space charge limiting current (SCLC) characteristics at higher voltage. An increase in current was observed with increase in ion fluence due to increase in free charge carriers.
关键词： PbSe nanowires,Negative Li ion implantation,Electrical properties,Structural properties,Optical properties,Electrodeposition
更新于2025-09-04 15:30:14
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Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
摘要： The electrical and structural properties of thin hafnia films grown by the atomic layer deposition technique were investigated before and after different annealing steps as well as after a dc H plasma treatment. By using the nuclear reaction analysis, the authors demonstrated that high concentrations of hydrogen (about 1–2 at. %) could be observed even in as-grown hafnia layers. An additional hydrogenation of the samples with atomic H led to a significant shift of the flatband voltage. This shift could be explained by the introduction of positively charged H-related defects which were found to be stable at room temperature. By comparing the experimental findings with the theory and the data from muon spin spectroscopy, they tentatively ascribed these defects to interstitial H in HfO2.
关键词： atomic layer deposition,structural properties,hydrogen,electrical properties,hafnium dioxide
更新于2025-09-04 15:30:14