- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Ag nanoparticle decorated MnO <sub/>2</sub> flakes as flexible SERS substrates for rhodamine 6G detection
摘要： Smart design of advanced substrates for surface-enhanced Raman scattering (SERS) activity is challenging but vital. Herein, we synthesized a new kind of AgNPs/MnO2@Al flexible substrate as a SERS substrate for the detection of the analyte rhodamine 6G (R6G). The fabrication of porous MnO2 nanoflakes on Al foil was conducted via a facile hydrothermal strategy. Owing to the large active surface area of the MnO2 nanoflakes, the Ag nanoparticles were immobilized and displayed superior SERS performance with a low detection concentration of 1 × 10?6 M for R6G. In addition, the SERS performance was found to be strongly related to the morphology of the MnO2@Al substrate material. Our smart design may provide a new method of construction for other advanced SERS substrates for the detection of R6G.
关键词： Ag nanoparticles,rhodamine 6G detection,MnO2 flakes,flexible SERS substrates
更新于2025-09-04 15:30:14
-
In <sub/>0.49</sub> Ga <sub/>0.51</sub> P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
摘要： We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100% germanium (Ge) buffer layer. Both buffer layer and device layers were grown epitaxially using metalorganic chemical vapor deposition (MOCVD). With the assistance of numerical simulation, we were able to achieve high performance GaAs HBTs with DC current gain of ～100 through optimizing the base doping concentration (C-doped, ～ 1.9×1019/cm3), base layer thickness (～55 nm), and the sub-collector doping concentration (Te-doped, > 5×1018/cm3). The breakdown voltage at base (BV ceo) of higher than 9.43 V was realized with variation of < 3% across the 200 mm wafer. These results could enable applications such as power amplifiers for mobile phone handsets and monolithic integration of HBTs with standard Si-CMOS transistors on a common Si platform.
关键词： InGaP/GaAs heterojunction bipolar transistors,base doping concentrations,base thickness,Si substrates,HBTs,sub-collector doping concentrations
更新于2025-09-04 15:30:14