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Microstructural Characterization of Defects and Chemical Etching for HgCdSe/ZnTe/Si (211) Heterostructures
摘要： In this work, transmission electron microscopy has been used to investigate HgCdSe/ZnTe/Si (211) heterostructures grown by molecular beam epitaxy and to study the effects of chemical etchants for measurements of defect density in the HgCdSe epilayers. Both ZnTe/Si and HgCdSe/ZnTe interfaces were decorated with {111}-type stacking faults inclined at angles of ~19° or ~90° with respect to the interface plane. Similar stacking faults were also present in the upper regions of the HgCdSe films. High-resolution imaging and Fourier image analysis revealed dislocations, mostly with a Burgers vector, at both ZnTe/Si and HgCdSe/ZnTe interfaces. Etching solutions based on different combinations of nitric acid, hydrochloric acid and lactic acid were tried in attempts to identify an etchant that provided one-to-one correspondence between etch pits and defects in the HgCdSe layer. Focused-ion-beam milling and transmission electron microscopy were used to prepare site-specific cross-section samples from across the etch pits. However, many defects in regions surrounding the etch pits were unaffected by the various different etchants.
关键词： dislocations,etch pits,HgCdSe (211),alternative substrates,ZnTe
更新于2025-09-23 15:19:57
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[IEEE 2018 International Flexible Electronics Technology Conference (IFETC) - Ottawa, ON, Canada (2018.8.7-2018.8.9)] 2018 International Flexible Electronics Technology Conference (IFETC) - Fabrication and Performance Evaluation of Carbon-based Stretchable RFID Tags on Textile Substrates
摘要： We fabricate carbon-based stretchable antennas for passive UHF RFID tags. The tag antennas are created on a stretchable elastic band by brush-painting. In addition to wireless evaluation of the fabricated RFID tags before and after cyclic stretching, the properties of the novel carbon-based antenna material are studied. The wireless performance of the established RFID tags is compared to similar stretchable silver-based RFID tags. Based on the achieved results, the established carbon-based tag antennas do not perform in the same high level as the silver-based tag antennas but their read ranges of around 2 to 2.4 meters are suitable for versatile textile-integrated RFID applications. Stretching causes permanent decrease to the tag read range but they remain functional even after 100 stretching cycles. These preliminary results are very promising, considering the current trend towards more environmentally friendly and cost-effective materials in electronics.
关键词： passive UHF RFID,textile substrates,wearable electronics,carbon-based materials,antennas,stretchable electronics
更新于2025-09-19 17:15:36
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[Methods in Molecular Biology] Phototropism Volume 1924 (Methods and Protocols) || Determination of Phototropism by UV-B Radiation
摘要： UV-B phototropism in etiolated Arabidopsis seedlings has only been shown recently and needs further exploration. Here we elaborate on how to generate a customized setup with a unilateral UV-B light source, the required plant materials, different growth substrates, and a framework for data analysis.
关键词： Medium reflectance,Arabidopsis seedlings,Medium fluorescence,Growth substrates,Phototropism,UV-B,UV-B light sources
更新于2025-09-19 17:15:36
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Flexible high-efficiency CZTSSe solar cells on diverse flexible substrates via an adhesive-bonding transfer method
摘要： Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells are showing great promise due to using earth-abundant and non-toxic materials and tuning the bandgap through the amount of S and Se. Flexible high-efficiency CZTSSe solar cells are one of the outstanding research challenges because they currently require the use of thick glass substrates due to the high-temperature heat treatment process, and for this reason, few flexible CZTSSe solar cells have been reported. Furthermore, most researchers have used thin glass and metal substrates with little flexibility; the power conversion efficiency (PCE or ?) values of the solar cells made with them have been somewhat lower. To overcome these hurdles, we transferred high-efficiency CZTSSe solar cells formed on a soda-lime glass substrate to flexible substrates via an adhesive-bonding transfer method. Via this method, we were able to achieve the PCE of 5.8 to 7.1% on completely flexible substrates such as cloth, paper, and polyethylene terephthalate (PET). In particular, we were able to produce a CZTSSe solar cell on a PET substrate with a PCE of 7.1%, which is the highest among fully-flexible CZTSSe solar cells currently known to us. In addition, we deeply analyzed the PCE degradation of the flexible CZTSSe solar cell fabricated by the transfer method through a panoramic focused ion-beam image and nanoindentation. From the results of our work, we provide an insight into the possibility of making flexible high-efficiency CZTSSe solar cells using our transfer method.
关键词： thin-film solar cell,transfer method,polyethylene terephthalate (PET),Cu2ZnSn(S,Se)4 (CZTSSe),diverse flexible substrates
更新于2025-09-19 17:13:59
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Analysis of dominant non-radiative recombination mechanisms in InGaN green LEDs grown on silicon substrates
摘要： Relationship between the external quantum efficiency (EQE) curves and the dominant non-radiative recombination mechanisms of InGaN green LEDs grown on silicon substrates were investigated. Through the analysis of the ABC+(cid:1)(cid:2)(cid:3)(cid:4) model, the significant drop in EQE at low current levels is due to an increasingly defect-related Shockley-Read-Hall (SRH) recombination. Under extremely low current densities, the defect traps can even become the dominant channel for the leakage current through the tunneling process, thereby reducing the efficiency of carrier injection into the active region. These observations were further supported by the carrier lifetime measurement. However, this fails to explain the droop in EQE at high current densities, especially when SRH recombination has been saturated. Our results show that carrier leakage has becomes dominant at high current density when Auger recombination has been less impossible. Reduced carrier leakage may lead to increased carrier injection efficiency, which in turn alleviates EQE droop.
关键词： silicon substrates,InGaN,non-radiative recombination,green LEDs,external quantum efficiency,carrier leakage
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Evaluating the Electricity Production and Energy Saving from Transparent Photovoltaics for Windows in Commercial Buildings
摘要： A pentacene (C22H14)-based high-voltage organic thin-film transistor (HVOTFT) was demonstrated on both a rigid and a flexible substrate. The HVOTFT showed minimal degradation of the current–voltage (I–V ) characteristics under flexure. Consistent with the previous reports on amorphous silicon (a-Si) TFTs, the offset drain/source structure enabled high-voltage operation, allowing for the HVOTFT to switch very large drain-to-source voltages (VDS > 300 V) with a relatively lower controlling voltage (0 V < VG < 20 V). The HVOTFT was evaluated with three different gate insulators to assess how the dielectric constant and interface states influence device performance. Due to the high electric field generated in the device, the HVOTFT suffered from impeded charge injection into the gated semiconductor channel, similar to that reported in a-Si-based high-voltage TFTs, as well as from a nonsaturating I–V characteristic behavior similar to the short-channel effects found in FETs. A field plate was implemented to improve charge injection into the gated semiconductor channel. Output characteristics of the HVOTFT were numerically corrected to demonstrate that the device I–V can be modeled with the existing Si-based FET models.
关键词： Flexible substrates,high-κ gate dielectrics,organic thin-film transistors (HVTFTs),high-voltage semiconductors
更新于2025-09-19 17:13:59
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Mechanism of Current Shunting in Flexible Cu <sub/>2</sub> Zn <sub/> 1? <i>x</i> </sub> Cd <sub/><i>x</i> </sub> Sn(S,Se) <sub/>4</sub> Solar Cells
摘要： Partial cation substitution is an effective way to inhibit defects and carrier recombination, which can improve the efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Herein, flexible Cu2Zn1?xCdxSn(S,Se)4 (x = 0–15%) solar cells are fabricated on Mo foils with partial Cd substitution for Zn via a green solution-process. The best device performance can be achieved when Cd/(Zn + Cd) = 8%, with an efficiency up to 6.49% and a significantly improved device repeatability. The EU decreases from 24 to 15 meV, indicating that antisite defects and band tailings are effectively suppressed. C–V data reveal that Wd and Vbi are enhanced after doping Cd, resulting in a stronger built-in electric field which facilitates Fermi-level splitting and hence increases band bending of the absorber toward the junction interface. Furthermore, the mechanism of current shunting is studied using an equivalent circuit model with three parallel current pathways to fit J–V curves. The key parameters for the solar cell diode such as A, J0, and Rsh are significantly improved by partially substituting Zn with Cd, demonstrating that current shunting loss is suppressed and the junction quality is improved, resulting in a significant improvement in device repeatability.
关键词： current shunting,Cu2ZnSn(S,Se)4 solar cells,Cd substitutions,Mo foils,flexible substrates
更新于2025-09-19 17:13:59
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Brightening and Guiding Single‐Photon Emission by Plasmonic Waveguide–Slit Structures on a Metallic Substrate
摘要： By designing a plasmonic waveguide–slit structure (a nanoslit etched in a silver nanowire) on a silver substrate, an ultrahigh Purcell factor and ultralarge figure of merit (FOM) are numerically predicted. Because of the large field enhancement (>150 times the incident field) and the ultrasmall optical volume (V ≈ 2 × 10?5λ3) of the resonant mode in the metallic nanoslit, the simulations show that the Purcell factor in the system can reach up to FP = 1.68 × 105, which is more than ten times the maximum Purcell factor in previous work (by placing metallic nanoparticles on a metal surface with a nanogap). Because of the utilization of a silver substrate rather than the common dielectric substrate, the mode cutoff of the surface plasmon polariton (SPP) waveguide mode is completely eliminated, which provides a large selection range of the nanowire radii to support the resonant mode in the nanoslit. Moreover, the SPP propagation length is significantly increased by more than 30 times. As a result, an ultralarge FOM of 1.40 × 107 is obtained, which is more than 80 times the maximum FOM in previous work where the metallic nanowire is placed on or surrounded by dielectric materials.
关键词： efficient guiding,long propagation length,bright single-photon emission,metallic substrates,purcell enhancement
更新于2025-09-19 17:13:59
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Self-Assembled Monolayers with Embedded Dipole Moments for Work Function Engineering of Oxide Substrates
摘要： Self-assembled monolayers (SAMs) are frequently used for work function (WF) engineering of different materials. For this, typically dipolar groups are attached to the molecule terminus at the SAM?ambient interface, which also influences its chemistry. WF engineering and interface chemistry can, however, be decoupled from one another using embedded dipolar groups, as has been demonstrated before for thiolate SAMs on metals. Herein, we extend this concept to oxide substrates. For this, a series of biphenyl-based molecules with a phosphonic acid (PA) anchoring group was synthesized, with one of the nonpolar phenyl units exchanged for a polar pyrimidine moiety, the dipole moment of which is oriented either toward (“down”) or away (“up”) to/from the PA group and, consequently, to/from the substrate. SAMs of these molecules formed on indium tin oxide (ITO), a frequently used and application-relevant oxide substrate, feature a uniform molecular configuration, dense molecular packing, and an upright molecular orientation. These SAMs exhibit pronounced electrostatic effects associated with the embedded dipolar groups, viz. shifts of the characteristic peaks in the C 1s X-ray photoelectron spectra and WF variations. The latter values were found to be 3.9, 4.85, and 4.4 eV for the up, down, and nonpolar reference SAM-engineered ITO, respectively. Consequently, these SAMs can serve as a powerful tool to monitor WF engineering effects in a variety of device assembles, decoupling these effects from the interface chemistry. The comparably low WF value for the up SAM is particularly important since it extends a rather limited variety of SAMs capable of lowering the WF of ITO.
关键词： Phosphonic acid,Self-assembled monolayers,Work function engineering,Embedded dipolar groups,Indium tin oxide,Oxide substrates
更新于2025-09-19 17:13:59
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Dislocation reduction in AlInSb mid-infrared photodiodes grown on GaAs substrates
摘要： We investigated the electrical and optical properties of a highly mismatched AlInSb/GaAs photodiode sensor working in the mid-infrared range at room temperature. A substantial increase in the device performance was achieved by controlling the strain energy density in the dislocation ?lter layers and barrier layers to reduce the density of threading and interfacial dislocations, respectively. The resulting photodiode showed a high resistance-area product of 0.24 Ω cm2 and a peak detectivity of 2.2 × 109 cm Hz1/2 W–1 at 3.3 μm.
关键词： AlInSb,GaAs substrates,photodiode,dislocation reduction,mid-infrared
更新于2025-09-16 10:30:52