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[IEEE 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2018.7.16-2018.7.19)] 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Electrical Characterization of FEOL Bridge Defects in Advanced Nanoscale Devices Using TCAD Simulations
摘要： In this work, we present the electrical characterization of various Front-End-Of-Line (FEOL) bridge defects location using Technology Computer Aided Design (TCAD) based simulation. The electrical characteristics obtained from simulation is useful in identifying the possible locations of the bridge defects. The simulation result correlates well with nano-probing result collected on actual failing devices. Furthermore, simulation of potential defects provides a quick way of understanding how the defect may influence the electrical behavior of transistors.
关键词： Defect Simulation,TCAD,FinFET
更新于2025-09-23 15:21:01
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SET Sensitivity of Tri-Gate Silicon Nanowire Field-Effect Transistors
摘要： The SET response of SOI tri-gate silicon nanowires is investigated using direct measurements of current transients. Resulting collected charge distributions are compared to simulations in two steps: Monte-Carlo simulations of deposited energy and TCAD simulation of collected charge, using detailed description of charge generation. Good agreement with experimental data is obtained. Current simulation tools can thus be used, with minor optimization, to simulate such integrated devices. The analysis of SETs show collected charge values lower than both the charge estimated from the LET and the charge actually generated in the nanowire, revealing a limited sensitivity of nanowire devices to high LET ions.
关键词： Nanowire,SEE,Single-Event Transient,Ultra-Thin SOI,Particle-matter interaction,Single-Event Effect,Geant4,FinFET,TCAD,Multiple-gate,Simulation,SET,Experiments
更新于2025-09-23 15:21:01
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Performance Evaluation of Innovative Ion-Sensitive Field Effect Diode for pH Sensing
摘要： In this paper, we have successfully introduced and characterized an innovative ion sensitive device called “Ion sensitive field effect diode”, a completely new ion-sensitive sensor. In conventional ion-sensitive devices, electrolyte/insulator interface reactions produce a conductive channel between the drain and the source whereas in our proposed structure, a p-n junction forms and is responsible for the conductivity. Since it is for the first time that such device is proposed as an ion sensor, comprehensive characterizations have been performed based on our previously TCAD-based model which was developed to simulate electrolyte and electrolyte/insulator interface. Considering this reliable model, sensing parameters of pH sensors such as sensitivity and signal to noise ratio are investigated and evaluated. Meanwhile, an accurate model to approximate the noise behavior of the device is proposed. Moreover, the effect of Silicon active layer thickness and doping concentration on the sensitivity of the device have been studied. Results reveal that ion sensitive field effect diode can achieve sensitivity about 5 times higher than the Nernst limit and can be considered as a promising candidate toward accurate and more sensitive ion sensors and this new type of sensor deserves further attention and development.
关键词： pH sensor,Detection Limit,TCAD-based model,Ion Sensitive Field Effect Diode,Electrolyte/insulator interface
更新于2025-09-23 15:21:01
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Increased efficiency of 23% for CIGS solar cell by using ITO as front contact
摘要： In this paper, a CIGS material based solar cell structure is proposed. The ef?ciency of the designed structure is improved by considering ITO (Indium Tin Oxide) as a front contact. The detailed analysis of the device is carried out thoroughly using SILVACO ATLAS. Various design parameters such as open-circuit voltage (Voc), the voltage at maximum power density, short circuit current density (Jsc), maximum output power (Pm), and ?ll factor (FF), are calculated. CIGS solar cell with ITO as a front contact gives an improved ef?ciency of 23.074%. Thus, the proposed solar cell is a suitable candidate for ultra-high ef?ciencies.
关键词： Fill factor,Ef?ciency,ITO,CIGS,Solar cell,TCAD
更新于2025-09-23 15:19:57
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[IEEE 2018 4th International Conference on Devices, Circuits and Systems (ICDCS) - Coimbatore, India (2018.3.16-2018.3.17)] 2018 4th International Conference on Devices, Circuits and Systems (ICDCS) - Comparative Study of CMOS based Dosimeters for Gamma Radiation
摘要： In this paper, a quantitative comparison study of the CMOS based Double Gate RADFET, Gate All Around (GAA) RADFET, Junctionless Double Gate (JL-DG) RADFET dosimeter and their electrical performance has been carried out. Gamma radiation Model of Sentaurus 3D Device simulator has been used to investigate the trapping detrapping of electron hole due to the moderate dose radiation environment. The impact of the total dose on the threshold voltage and drain current has been addressed. The obtained results indicate improvement in the subthreshold parameters of JL DG RADFET as compared to the conventional DG RADFET and GAA RADFET dosimeter.
关键词： Threshold Voltage,Sentaurus TCAD,JL DG RADFET,DG RADFET,Gamma Radiation Model,GAA MOSFET
更新于2025-09-19 17:15:36
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Optimization of the In0.3Ga0.7As-Layer Thickness in a Triple-Junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P Solar Cell
摘要： The optimum absorbing-layer thickness in the bottom In0.3Ga0.7As subcell of a triple-junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P solar cell is sought for using the Sentaurus TCAD software package as a factor of the minority charge-carrier lifetime in this layer. The lifetime is set in the range from 17 ps to 53 ns. The calculation results show that the optimum thickness varies from 0.9 to 7.5 μ m. In addition, the contribution of the bottom In0.3Ga0.7As subcell to the efficiency of this triple-junction solar cell is estimated at various lifetime values. Its value varies from 1 to 7%.
关键词： numerical modeling,Sentaurus TCAD,In0.3Ga0.7As,solar cell,optimum thickness
更新于2025-09-19 17:13:59
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[IEEE 2019 International Topical Meeting on Microwave Photonics (MWP) - Ottawa, ON, Canada (2019.10.7-2019.10.10)] 2019 International Topical Meeting on Microwave Photonics (MWP) - 300 GHz Photonic Self-Mixing Imaging-System with vertical illuminated Triple-Transit-Region Photodiode Terahertz Emitters
摘要： In this paper, we report a phase-sensitive photonic THz two-tone self-mixing imaging system, comprising a self-developed vertical illuminated triple transit region photodiode (TTR-PD) and a commercial square law Schottky barrier diode as THz emitter and THz detector, respectively. Using the two-tone self-mixing approach, the phase information of a device-under-test can be extracted by down-mixing two THz signals inside the SBD, whereas the phase information remains in the output signal. The THz tones are generated by two free-running lasers and the TTR-PD, while one optical signal is externally modulated for double sideband carrier suppression. By means of the self-mixing, the phase noises of the free running lasers are canceled out. Using a second PD for the trigger, lock-in detection allows fast imaging speed, only limited by the integration constant. Beside the imaging system, we present the characteristics of the used vertically illuminated terahertz triple transit region photodiodes with thin depletion zone and small active areas. Numerical analysis by energy-balance model based TCAD simulations show transit-time limitations over 200 GHz, due to the electron field management within the active photodiode layers and the resulting high electron velocities. Therefore, the fabricated TTR-PDs show a flat ±2 dB frequency response within the frequency range from 225 GHz to 305 GHz. By employing the proposed photonic two-tone imaging system with the fabricated TTR-PDs, amplitude and phase difference vector images are taken at 299.5 GHz and 300.5 GHz. Metal and acrylic glass items inside a paper envelope are clearly visible, which demonstrates the potential of the system.
关键词： energy balance,self-mixing,TCAD,Terahertz spectroscopy,terahertz imaging,terahertz photodiodes
更新于2025-09-19 17:13:59
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Efficiency Roadmap for Evolutionary Upgrades of PERC Solar Cells by TOPCon: Impact of Parasitic Absorption
摘要： Passivating contacts created via a thin interfacial oxide and a highly doped polysilicon layer, e.g., the TOPCon technology, are on the verge of being implemented in solar cell mass production. Investment decisions rely on R&D to identify the most promising implementation option, meaning a trustworthy roadmap based on predicted performance gains. This article shows how to thoroughly quantify the performance potential via numerical simulation, focusing on an evolutionary upgrade of a busbarless p-type bifacial passivated emitter rear cell (PERC) technology. We specifically highlight the need to consider not only the electrical gains of passivating contacts, but also the associated optical losses due to parasitic absorption in the polysilicon layers for front and rear illumination. The influence of free-carrier absorption in polysilicon on the solar cell optics is characterized on experimental test structures in order to verify our optical simulation model. Introducing TOPCon fully at the rear and also locally aligned to the front fingers can boost the PERC efficiency by approximately 1%abs. The final device is strongly limited by losses in the p-type c-Si bulk and phosphorus-doped front emitter. Consequently, the presented evolutionary TOPCon upgrades may well be of increased relevance for future improved p-PERC cells, as an alternative to the current focus on n-type TOPCon cells with boron emitter.
关键词： parasitic absorption,sentaurus TCAD,TOPCon,simulation,passivating contacts,Free-carrier absorption,roadmap,Quokka3
更新于2025-09-16 10:30:52
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Analysis of Thin-film Direct Band-gap SiGeSn alloy based Heterostructure Solar Cell Featuring SiGe Absorber Layer
摘要： Ternary alloy Si1-x-yGexSny or GexSn1-x made up of group IV elements has been receiving attention from researchers in recent years due to its direct band gap nature. In this work, we investigate the performance of solar cells made with this alloy. We have proposed a n+ Si1-x-yGexSny (emitter)/p- Si1-xGex (absorber)/p- Si1-x-yGexSny (base) /p+ Si1-x-yGexSny (back surface field layer: BSF) based solar cell grown on Si1-x-yGexSny substrate. The calculated values are compared with the values for existing Si1-xGex solar cells and comparatively improved performances are obtained for the proposed structure. The effects of different absorber layer thickness, doping concentrations of the absorber and BSF layers, Ge concentration in Si1-xGex and Sn concentration in Si1-x-yGexSny are also studied for the proposed structure. Conversion efficiency as high as 19.9% for substrate thickness as low as 10 μm has been obtained for the proposed structure. The low value of substrate thickness and high efficiency make the proposed structure attractive as a low-cost device for applications in spacecraft and satellites.
关键词： conversion efficiency,TCAD simulation,single junction solar cell,Si1-x-yGexSny alloys
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) - Genting Highland, Pahang, Malaysia (2019.8.21-2019.8.23)] 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) - The Effect of Illumination Intensity on the Performance of Germanium Based-Thermophotovoltaic Cell
摘要： The significance of optimizing power intensity in a thermophotovoltaic system had spurred the efforts on typically thermophotovoltaic cells which are exploiting installed near to the heat source. Germanium with 0.66 eV bandgap is recommended and extensively employed to harvest infrared radiation up to 1.8 μm. The integration of this material contributes to a cost-effective thermophotovoltaic system by capturing long wavelength under low blackbody the atmospheric perturbation between germanium the thermophotovoltaic cells affects the intensity of incoming illumination, which alters the electrical performance of the cells. Nonetheless, the investigation of this issue is remained at the infancy stage and more characterization works are required to understand the influence of illumination intensity on the cell conversion efficiency. In this work, Silvaco TCAD single Ge thermophotovoltaic cell under 2000 K blackbody radiation temperature by manipulating the illumination intensity. A conversion efficiency of 11.8 % was achieved under higher illumination intensity of 2000 K due to the increase in the maximum voltage from 0.19 V to 0.42 V when compared to AM 1.5 illumination condition. The success of this work will contribute to the incorporation of understanding the effect of incident illumination intensity on the performance of Ge cell.
关键词： light intensity,Germanium cell,TPV,Silvaco TCAD
更新于2025-09-16 10:30:52