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- 摘要
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4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness
摘要： A state-of-the art family of 1200 V junction barrier Schottky (JBS) diodes was developed. These devices are highly competitive in switching applications thanks to low specific series resistance (1.8 mΩ.cm2 at current rating) and low capacitive charge (1420 nC.cm-2 at 800 V). A uniform avalanche distribution over the active area combined with an optimized high-voltage termination provides industry-leading UIS capabilities. Stringent reliability tests were performed to meet the qualification requirements for the industrial market.
关键词： junction barrier Schottky diode,4H-SiC,emission microscopy,TCAD,unclamped inductive switching
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE International Conference on Semiconductor Electronics (ICSE) - Kuala Lumpur (2018.8.15-2018.8.17)] 2018 IEEE International Conference on Semiconductor Electronics (ICSE) - Physical Modelling and Simulation of Au/ZnO Schottky diode
摘要： A Schottky diode of Gold (Au)/ ZnO is simulated using an open source TCAD device simulator (Minimos-NT) and the effect of different device models on the electrical characteristics of ZnO Schottky diode have been studied. The simulated electrical characterization experimental results reported in [1] and the reasons for discrepancy in the results have been addressed. For effective simulation, material parameters of ZnO collected from literature published in various research papers and magazine articles were supplied to the software. Hence, development of a complete database of ZnO parameters was also aimed which will assist in future simulations of the said material.
关键词： Simulation,Schottky diode,Zinc Oxide,TCAD device simulator
更新于2025-09-09 09:28:46
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Reliability Investigation of 4H-SiC MOSFET Based on TCAD Simulation
摘要： The reliability of 4H-SiC MOSFET was investigated based on TCAD simulation. The results shown that the leakage current was increased with the increment of ambient temperature while the breakdown voltage almost kept constant. Localized electric field focalizing indicated that a local breakdown region was located between P-base and JFET region. Significantly, the SiC MOSFET would be damaged from metal electrodes melting and gate oxide breaking down under short-circuit condition owing to localized hotspot.
关键词： TCAD,hotspot,reliability,4H-SiC MOSFET
更新于2025-09-09 09:28:46
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Geometric influence of cylindrical surface curvature on the electrostatics of thin film transistors
摘要： Thin film transistor (TFTs) based integrated circuits on flexible substrates promise interesting approaches to human interface systems. TFTs have been fabricated on textured surfaces such as textiles, paper, artificially corrugated substrates and fibers. This can result in the metal-insulator-semiconductor (MIS) stack being significantly distorted from a planar geometry to having high curvature. Although the direct deposition on textured surfaces does not result in mechanical stress (as opposed to that seen during bending, buckling, wrinkling), the geometry of high curvature can influence the characteristics of the TFT. Here we present a closed form analytical model describing the impact of high curvature on the electrical performance of the TFT. Models are obtained from the solution to the Poisson-Boltzmann equation in polar co-ordinates and are limited to cylindrical surface (zero Gaussian curvature) with the ratio of radius of curvature of the semiconductor-insulator interface, rsi, to insulator thickness, ti, ranging from rsi/ti = 2 to rsi/ti = 50. Models are verified using Technology Computer-Aided Design (TCAD) simulations performed using amorphous galium indium zinc oxide (a-GIZO). Studies show that when the semiconductor-insulator interface is curved convex (normal vector into the gate) the interfacial free carrier concentration increases by 50% (for rsi/ti = 2) to 8.5% (for rsi/ti = 15) as compared to planar TFTs. On the other hand, when the curvature is concave, the free carrier concentration decreases by those percentages as compared to planar TFTs. Thus curvature can modulate TFT transconductance. Models show that the impact of curvature becomes negligible (< 4% variation) for rsi/ti > 25. Techniques to generalize the results to periodic cylindrical surfaces and other semiconducting materials are discussed along with experimental verification. This work forms an analytical basis to understand the behavior of TFTs fabricated on textured substrates.
关键词： textured surfaces,TCAD simulations,a-GIZO,flexible substrates,Thin film transistor,Poisson-Boltzmann equation
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - 4H-SiC Junction Barrier Schottky Diodes and Power MOSFETs with High Repetitive UIS Ruggedness
摘要： A test procedure for repetitive unclamped inductive switching (R-UIS) is presented and the results are reported for state-of-the-art 4H-SiC Schottky barrier diodes (SBDs) and MOSFETs. The energies at failure are 8.3, 8.9, and 10.3 J/cm2 for SBD parts rated to 700, 1200, and 1700 V, respectively. The cumulative thermal effects are intentionally weak for this evaluation, and under these conditions the energies to failure are less than 10% lower for repetitive than single-pulse UIS. 1200 V / 40 mΩ MOSFET parts were stressed with 100 mJ pulses and the integrity of the gate oxide was assessed with a TDDB test. The times to failure for fresh and stressed parts are effectively the same. Tests on parts from several SiC device suppliers showed that high R-UIS ruggedness is a major differentiator of Microsemi’s SiC technology.
关键词： Schottky diode,unclamped inductive switching,4H-SiC,MOSFET,TCAD
更新于2025-09-09 09:28:46
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[IEEE 2018 International Semiconductor Conference (CAS) - Sinaia, Romania (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - Numerical Simulations of Radiation Damage Effects in Active-Edge Silicon Pixel Sensors for High-Energy Physics Experiments
摘要： High-energy physics experiments at the future CERN High Luminosity LHC (Large Hadron Collider) require highly segmented pixelated sensors of increased geometrical efficiency and the ability of withstanding extremely high radiation damage. The performance of planar n-on-p sensors with active edges is simulated at very high fluences (2×1016 neq/cm2), using a recent three level trap model for p-type silicon material. Precise structural definition is achieved by investigating the doping pro(cid:191)le of the devices via the Secondary Ion Mass Spectrometry technique. The breakdown voltage, and hole density distribution are studied as a function of radiation fluences.
关键词： TCAD simulation,radiation damage,Active edge sensor
更新于2025-09-09 09:28:46