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Numerical evaluation of the optical-splitter system efficiency using a TCO as optical splitter
摘要： In the present work, we simulate the J-V characteristic of a solar cell combination to evaluate the efficiency in an optical splitter system. Two different transparent conductive oxides (TCO) were used as splitters (ITO and SnO2:F). The spectral response of the TCOs was modeled according to Drude's theory, using different concentration values. Then, the J-V characteristics of the cells were simulated by SCAPS 1-D, using the spectra obtained for each TCO by superimposing the spectral response on the solar spectrum. The results indicate that solar cells can achieve efficiencies in the system above 17 % using ITO as splitter with a positive gain for both solar cells.
关键词： splitter system,solar cell simulation,TCO,SCAPS
更新于2025-09-23 15:23:52
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Compositional analysis by RBS, XPS and EDX of ZnO:Al,Bi and ZnO:Ga,Bi thin films deposited by d.c. magnetron sputtering
摘要： Rutherford backscattering spectrometry, X-ray photoelectron and X-ray energy dispersive spectroscopies were employed to analyse Bi incorporation into ZnO:Al and ZnO:Ga transparent and electrically conductive thin films deposited by d.c. magnetron sputtering, with thickness in the range of 300–400 nm. Sputtering was performed in an argon atmosphere from two targets in confocal geometry being one composed of either ZnO:Al2O3 or ZnO:Ga2O3 composites and the other a Bi metal target. The content of bismuth dopant in the ZnO matrix was controlled by the respective target current density (JBi) in order to attain a high optical transparency (> 80%) in the visible region. For ZnO:Al,Bi films Bi content varied from 0.1 to a maximum of 1.5 at.% when varying JBi from 0.06 to 0.26 mA cm?2. However, for ZnO:Ga,Bi films, deposited in similar conditions, Bi reached a maximum overall layer content of 2.4 at.%, with a surface enrichment content that varied from 1.3 to 8.8 at.%. It was also observed that the Bi content in the topmost layers of the films is slightly depleted due to thermal evaporation upon thermal annealing in vacuum at 350 °C. It is envisaged applications for these films as transparent photoelectrodes and thermoelectric materials.
关键词： Ga,Bismuth,TCO,Doping,Thermoelectric,Al,XPS,RBS,PIXE,ZnO
更新于2025-09-23 15:23:52
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Crystallisation Phenomena of In2O3:H Films
摘要： The crystallisation of sputter-deposited, amorphous In2O3:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy. Melting of metallic indium at ~160 °C was suggested to promote primary crystallisation of the amorphous In2O3:H films. The presence of hydroxyl was ascribed to be responsible for the recrystallization and grain growth accompanying the inter-grain In-O-In bounding. Metallic indium was suggested to provide an excess of free electrons in as-deposited In2O3 and In2O3:H films. According to the ultraviolet photoelectron spectroscopy, the work function of In2O3:H increased during crystallisation from 4 eV to 4.4 eV, which corresponds to the oxidation process. Furthermore, transparency simultaneously increased in the infrared spectral region. Water was queried to oxidise metallic indium in UHV at higher temperature as compared to oxygen in ambient air. Secondary ion mass-spectroscopy results revealed that the former process takes place mostly within the top ~50 nm. The optical band gap of In2O3:H increased by about 0.2 eV during annealing, indicating a doping effect. This was considered as a likely intra-grain phenomenon caused by both (In0)O?? and (OH?)O? point defects. The inconsistencies in understanding of In2O3:H crystallisation, which existed in the literature so far, were considered and explained by the multiplicity and disequilibrium of the processes running simultaneously.
关键词： high mobility,In2O3:H,thin films,TCO,crystallisation
更新于2025-09-23 15:22:29
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Time Dependent Facile Hydrothermal Synthesis of TiO2 Nanorods and their Photoelectrochemical Applications
摘要： In the present investigation, we report facile hydrothermal synthesis of TiO2 nanorods with high density rutile phase on Transparent Conducting Oxide (TCO) for enhanced solar cell application. The structural, optical, morphological, compositional and electrochemical properties are investigated by detailed XRD, UV-Vis-NIR spectrophotometer, FESEM, TEM, EDAX, XPS and photoelectrochemical studies. It is demonstrated that, the deposited TiO2 thin film shows pure rutile phase with tetragonal crystal structure. Optical spectra showed strong light absorption in UV region and FESEM images confirm the time dependent growth of TiO2 nanorods. EDAX and XPS Spectra confirm the formation of pure TiO2 nanorods. Photoelectrochemical performance with respect to time dependent growth of TiO2 nanorods showed highest photoconversion efficiency = 5.1%.
关键词： Hydrothermal synthesis,Photoelectrochemical cell property,Single crystalline,Photoconversion efficiency,TiO2 nanorods,Transparent conducting oxide (TCO)
更新于2025-09-23 15:21:21
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ALD of ZnO:Ti: Growth Mechanism and Application as an Efficient Transparent Conductive Oxide in Silicon Nanowire Solar Cells
摘要： In the quest for replacement of indium-tin-oxide (ITO), Ti-doped zinc oxide (TZO) films have been synthesized by atomic layer deposition (ALD) and applied as n-type transparent conductive oxide (TCO). TZO thin films were obtained from titanium (IV) i-propoxide (TTIP), diethyl zinc and water, by introducing TiO2 growth cycle in a ZnO matrix. Process parameters such as the order of precursor introduction, the cycle ratio and the film thickness were optimized. The as-deposited films were analyzed for their surface morphology, elemental stoichiometry, optoelectronic properties and crystallinity, using a variety of characterization techniques. The growth mechanism was investigated for the first time by in situ quartz-crystal microbalance measurements. It evidenced different insertion modes of titanium depending on the precursor introduction, as well as the etching of Zn-Et surface groups by TTIP. Resistivity as low as 1.2 × 10-3 Ω cm and transmittance > 80% in the visible range were obtained for 72-nm thick films. Finally, the first application of ALD-TZO as TCO was reported. TZO films were successfully implemented as top electrodes in silicon nanowire solar cells. The unique properties of TZO combined with conformal coverage realized by ALD technique make it possible for the cell to show almost flat EQE response, surpassing the bell-like EQE curve seen in devices with sputtered ITO top electrode.
关键词： TCO,silicon nanowire solar cells,n-type,ZnO:Ti,Atomic Layer Deposition,QCM studies
更新于2025-09-23 15:19:57
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Innovative wide-spectrum MGZO transparent conductive films grown via reactive plasma deposition for Si hetero-junction solar cells
摘要： In this work, wide-spectrum Mg- and Ga co-doped ZnO (MGZO) transparent conductive films are developed via reactive plasma deposition (RPD) technique with soft thin-film growth process. MGZO film with a work function of ~4.36 eV can be achieved within 12 min without any intentional substrate-heating treatment. 480nm-thickness MGZO film exhibits a low resistivity of ~9.9x10-4 Ωcm and a high transmittance of ~82.6% in the UV-VIS-NIR region (λ approximately 400 nm-1200 nm). XRD spectra show that MGZO films exhibit (103) preferred orientation as the film thickness increases. A silicon hetero-junction (SHJ) solar cell based on 480nm-thick MGZO at the front side is completed. Excellent continuity of MGZO film is proven by the cross-sectional SEM images and there are no cracks and pinholes on the top and bottom of the c-Si pyramids. Further efficiency improvements are achieved using an ultra-thin SnOx buffer layer with an ameliorated p-a-Si:H/TCO interface. Also, a silicon hetero-junction (SHJ) solar cell using MGZO films on both sides is achieved with a conversion efficiency of 19.02%. These experimental results demonstrate that low-cost RPD-grown MGZO TCO materials could be commercially appropriate replacements for the conventional In2O3-based materials commonly used in SHJ solar cells and other optoelectronic devices.
关键词： Mg and Ga co-doping,Solar cells,Si heterojunction (SHJ),ZnO films,Transparent conductive oxides (TCO),Reactive plasma deposition (RPD)
更新于2025-09-19 17:13:59
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Radiation hardness investigation of heterojunction solar cell structures with TCO antireflection films
摘要： Phosphorus doped silicon carbide film as emitter in heterojunction structure was deposited on p-type Si(100) wafers at various deposition conditions by means of PECVD technology using silane (SiH4), methane (CH4), hydrogen (H2) and phosphine (PH3, 2 vol.% in H2) gas as precursors. ITO or IZO film was RF magnetron sputtered on top of the different P doped a-SiC:H(n) film. Irradiation of structures with Xe ions to total fluency 5x1011 cm-2 was performed at room temperature. Influence of phosphorus concentration and type of transparent conducting oxide was investigated. A deeper insight on the impact of irradiation on the electrophysical properties of sample was obtained by the analysis of complex impedance spectra.
关键词： Xe ions irradiation,RF magnetron sputtering,TCO antireflection films,radiation hardness,impedance spectra,heterojunction solar cell,PECVD
更新于2025-09-19 17:13:59
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Plasmonic effect of metal nanoparticles on enhancing performance of transparent electrodes: a computational investigation
摘要： In this paper, metal nanoparticles are used as a new concept to enhance the optical and conductive properties of transparent electrode films. Finite difference time domain (3D-FDTD) numerical analysis is carried out to study the influence of engineered nanoparticles on the electrode transparency and resistivity performances. Our investigation demonstrates that metal nanoparticles are responsible for inducing plasmonic and light trapping effects, where their spatial arrangement, geometry and position in transparent conductive oxide (TCO) play a crucial role in modulating the electrode optical and electrical properties. Besides, an enhanced average transmittance and reduced sheet resistance over the conventional electrodes are recorded. Subsequently, a new hybrid modeling approach based on 3D-FDTD supported by genetic algorithm global optimization is proposed to identify the metal of nanoparticles and their spatial distribution, allowing an excellent trade-off between transparency and resistivity characteristics. Interestingly, the investigated electrode structure with optimized nanoparticles patterning showcases promising pathways for boosting the TCO performances, where it provides a high average figure of merit of 38 × 10?3 ??1. Therefore, this systematic investigation can provide more insights concerning the benefit of plasmonic effects for designing high-performance transparent electrodes suitable for optoelectronic and photovoltaic applications.
关键词： Nanoparticles,Transmittance,TCO,Photovoltaic,Plasmonic,Metaheuristic
更新于2025-09-19 17:13:59
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Influence of Silicon Layers on the Growth of ITO and AZO in Silicon Heterojunction Solar Cells
摘要： In this article, we report on the properties of indium tin oxide (ITO) deposited on thin-film silicon layers designed for the application as carrier selective contacts for silicon heterojunction (SHJ) solar cells. We find that ITO deposited on hydrogenated nanocrystalline silicon (nc-Si:H) layers presents a significant drop on electron mobility μe in comparison to layers deposited on hydrogenated amorphous silicon films (a-Si:H). The nc-Si:H layers are not only found to exhibit a larger crystallinity than a-Si:H, but are also characterized by a considerably increased surface rms roughness. As we can see from transmission electron microscopy (TEM), this promotes the growth of smaller and fractured features in the initial stages of ITO growth. Furthermore, secondary ion mass spectrometry profiles show different penetration depths of hydrogen from the thin film silicon layers into the ITO, which might both influence ITO and device passivation properties. Comparing ITO to aluminum doped zinc oxide (AZO), we find that AZO can actually exhibit superior properties on nc-Si:H layers. We assess the impact of the modified ITO Rsh on the series resistance Rs of SHJ solar cells with >23% efficiency for optimized devices. This behavior should be considered when designing solar cells with amorphous or nanocrystalline layers as carrier selective contacts.
关键词： secondary ion mass spectrometry (SIMS),indium tin oxide (ITO),series resistance,Aluminum doped zinc oxide (AZO),transparent conductive oxide (TCO),transmission electron microscopy (TEM),silicon heterojunction (SHJ)
更新于2025-09-16 10:30:52
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Power Losses in the Front Transparent Conductive Oxide Layer of Silicon Heterojunction Solar Cells: Design Guide for Single-Junction and Four-Terminal Tandem Applications
摘要： In silicon heterojunction solar cells, optimization of the front transparent conductive oxide (TCO) layer is required in order to minimize both electrical and optical losses. In this article, design guidelines for this overall power loss minimization are presented—extending previous TCO optimization work that was limited to the maximization of the short-circuit current density alone—and these are used to prescribe the best TCOs for both single-junction and silicon-based four-terminal tandem applications. The employed procedure determines the loss associated with the front TCO layer as a function of the TCO carrier density, mobility, and thickness, as well as the pitch between the front electrode fingers. For a representative indium tin oxide (ITO) film with a mobility of approximately 20 cm2·V?1·s?1 and a carrier density of 2.5 × 1020 cm?3, the loss over the 700–1200 nm infrared wavelength range—the spectrum reaching the silicon bottom cell in a typical tandem structure—is minimized by using a finger pitch of 3 mm and an ITO thickness of 100–110 nm. This compares with an optimal finger pitch of 2 mm and an optimal ITO thickness of 70 nm for the same cell operating as a single-junction device under full spectrum. The methodology presented can also readily be applied to TCO materials other than ITO, to a wide variety of specific four-terminal tandem architectures and, with minor modifications, to rear TCO layers.
关键词： infrared (IR) spectrum,tandem solar cells,silicon heterojunction (SHJ) solar cells,transparent conductive oxide (TCO),Four-terminal
更新于2025-09-16 10:30:52