- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Investigation of temperature and frequency dependence of electrical conductivity and dielectric behavior in CuS and rGO capped CuS nanocomposites
摘要： In this work, we develop a simple and low-cost strategy toward the one-pot synthesis of reduced graphene oxide (rGO) capped copper sulfide (CuS) nanocomposite through an obvious redox transformation reaction between Cu and graphene oxide (GO) without any additive. The prepared CuS and rGO capped CuS nanocomposite have been characterized by various physicochemical techniques for the observation of shape, morphology, and structure. It reveals the average size of the synthesized samples in the range of 10–30 nm with the hexagonal structure. The UV–vis absorption spectra exposed the strong absorption peak of CuS and rGO capped CuS composites in the range of NIR region was observed. The synthesized samples displayed high dielectric constant and electrical conductivity in a wide range of frequency (102–106 Hz). The effect of temperature on the electrical conductivity of the synthesized rGO capped CuS nanocomposite was also investigated. The excellent electrical conductivity performance is ascribed to the synergistic effect between CuS and rGO. As the temperature increases, the maximum electrical conductivity of rGO capped CuS composite was exponentially increased at high temperature. The synthesized composite with a high dielectric constant and electrical conductivity is a promising material in high capacitance, and further, it is used as electrode materials for supercapacitors and energy storage applications.
关键词： electrical conductivity,temperature effect,CuS nanocomposites,reduced graphene oxide,dielectric constant
更新于2025-11-21 11:18:25
-
Temperature-dependent characterizations on parasitic capacitance of tapered through silicon via (T-TSV)
摘要： With increasing integration density of three-dimensional ICs, temperature is one of the major concern of circuit design, which influences the performance and reliability. In this paper, the parasitic capacitance of tapered TSV (T-TSV) with respect of thermal properties is studied. The concept of the Temperature Coefficient of Capacitance (TCC) is proposed to model the sensitive of TSV capacitance to temperature. It is found that TSV capacitance is sensitive to temperature under high frequency application, and the MOS capacitance variation is the main reason for the change of TSV capacitance and the TCC increases with elevated temperature. Furthermore, the affections of TSV dimensions on TCC are discussed. It is shown that the TCC increases gradually as the TSV radius increases, while the thickness of dielectric layer is the opposite. The cylinder TSV is less thermal sensitive than tapered TSV. This paper provides basis for TSV design considering the temperature effect.
关键词： tapered through silicon via (T-TSV),parasitic capacitance,temperature effect,three-dimensional ICs (3D ICs)
更新于2025-09-23 15:23:52
-
Temperature Compensation Method for Digital Cameras in 2D and 3D Measurement Applications
摘要： This paper presents the results of several studies concerning the effect of temperature on digital cameras. Experiments were performed using three different camera models. The presented results conclusively demonstrate that the typical camera design does not adequately take into account the effect of temperature variation on the device’s performance. In this regard, a modified camera design is proposed that exhibits a highly predictable behavior under varying ambient temperature and facilitates thermal compensation. A novel temperature compensation method is also proposed. This compensation model can be applied in almost every existing camera application, as it is compatible with every camera calibration model. A two-dimensional (2D) and three-dimensional (3D) application of the proposed compensation model is also described. The results of the application of the proposed compensation approach are presented herein.
关键词： temperature effect,3D imaging,structured light,camera calibration
更新于2025-09-23 15:21:21
-
N multiple quantum dot solar cells
摘要： In this work, we investigate the influence of the internal electric field induced by the polarization inside the active region of the p-i-n photodiode on the characteristics of InN/InGaN quantum dots intermediate band solar cell. Considering the conduction and valence band offsets, the electron and hole energy levels have been determined by solving analytically the corresponding Schr?dinger equations. The hole level, usually neglected in similar studies, is taken into account to determine all the intermediate transitions. All parameters of multiple quantum dot solar cells such as open-circuit voltage, short-circuit current density and photovoltaic conversion efficiency are determined as functions of the indium content, the internal electric field, inter-dot distances and dot sizes. Our calculations show that determining the photovoltaic conversion efficiency (η) without taking into account the internal electric field leads to an overestimation of η.
关键词： Temperature effect,Intermediate level,Internal electric field,Solar cell,Photovoltaic conversion efficiency
更新于2025-09-23 15:19:57
-
Determining combined effects of solar radiation and panel junction temperature on all model-parameters to forecast peak power and photovoltaic yield of solar panel under non-standard conditions
摘要： In the current study, we introduce two methods to extract model-physical parameters of a solar panel using photovoltaic metrics at key points. We use a single-diode circuit to describe a solar panel working under STC. According to the first method, we derive a new transcendental equation connecting series resistance Rs to quality factor η and photovoltaic metrics at key points. Following the second method, we establish a new analytic expression giving series resistance as a function of quality factor and key points coordinates. For both methods, we express parallel conductance Gp, photo-generation current Iph and leakage current Is in terms of quality factor and all photovoltaic metrics. We use quality factor as variational parameter to minimize RMSE between experimental and optimized characteristics. We borrow temperature coefficients from manufacturer data sheet and determine panel radiation coefficients to derive analytical expressions giving variations of photovoltaic metrics at key points as functions of panel junction temperature T and solar radiation S. To investigate dependencies of all model-physical parameters versus T and S, we consider numerical values of model-physical parameters at STC as initial conditions, and resolve the system of non-linear equations linking panel current to panel voltage at key points. We test numerical models established and mathematical expressions derived by specifying to PV solar panels such as KC130GT and SM55 operating at different environmental conditions of ambient temperature and solar radiation. As a result, for arbitrary environmental conditions, predicted characteristics agree with measured characteristics validating thereby our numerical approach.
关键词： Model-physical parameters extraction,Solar radiation effect,Panel junction temperature coefficients,Solar radiation coefficient,Panel junction temperature effect,Current-voltage characteristics
更新于2025-09-19 17:13:59
-
Efficiency improvement of GaAs Quantum Dot in GaAs1-xPx matrix for solar cell applications
摘要： In this paper, we present simulations and the optimization of electrical and optical properties of GaAs Quantum Dots (QD) in a GaAs1-xPx matrix. Our results showed that 25 GaAs/GaAs1-xPx QD layers provide a relative enhancement of 41.34 % and 75.40 % of the short-circuit current and efficiency, respectively. With the same number of the QD layers, the External Quantum Efficiency (EQE) measurement shows that the absorption range edge of low energy photons has been extended from 875 to 1200 nm (?EQE= 25%). The temperature effect has been studied for a different number of QD inserted. The optimal conversion efficiency of 25 QD layers is degraded from 23.50% to 18.70 % by increasing the temperature from 273 K to 350 K. Moreover, the electrical features obtained and EQE measurements for GaAs/GaAs1-xPx QDSC have been compared with those obtained for In0.47Ga0.53As/GaAs0.86P0.14 QDSC, In0.167Ga0.53As/GaAs and GaAs reference cell, in order to show the better structure.
关键词： Quantum dot,solar cells,temperature effect,EQE
更新于2025-09-19 17:13:59
-
Temperature effect on the binding energy and the diamagnetic susceptibility of a magneto-donor in Cylindrical Quantum Dot (GaAs/GaAlAs)
摘要： In this work, the effect of the temperature on the binding energy and the diamagnetic susceptibility of a shallow magneto-donor confined to move in a cylindrical quantum dot made out of GaAs/GaAlAs is studied within the effective mass approximation. We describe the quantum confinement by an infinite deep potential. The results show that when the temperature or the magnetic field increases, (i) the binding energy increases and (ii) the absolute value of the diamagnetic susceptibility decreases. Its effects depend strongly on the size of the CQD.
关键词： GaAs/GaAlAs,temperature effect,binding energy,cylindrical quantum dot,diamagnetic susceptibility,magneto-donor
更新于2025-09-19 17:13:59
-
Experimental Study on the Effect of Dust Deposition on Photovoltaic Panels
摘要： In recent years, PV is considered to be one of the main way to solve the current energy crisis. PV is generally built in exposed areas such as deserts and wasteland. And the efficiency of power generation of PV is easy affected by the dust accumulated on it. The research expounds the "three factors" of the effect of dust on PV, namely shielding effect, temperature effect and corrosion effect, then an efficiency evaluation method for photovoltaic cells is proposed. Finally, the field experiments show that with the increase of dust density, the short-circuit current, open-circuit voltage, and output power of the PV both decrease. The dust with a density of 10 g/m2 can reduce the maximum power of the PV by about 34%. In the initial stage of PV dust accumulation, dust has the greatest impact on its output performance. In addition, the dust density and the conversion efficiency have better nonlinear correlation. As the dust accumulation density gradually increases, the PV conversion efficiency gradually decreases. When the dust density increases to a certain extent, the PV conversion efficiency tends to be stable.
关键词： Temperature effect,Corrosion effect,Conversion efficiency,Shielding effect
更新于2025-09-12 10:27:22
-
Effect of Temperature on the Single-Particle Ground-State and Self Energy of a Polar Quantum Dot with Gaussian Confinement
摘要： The temperature dependence of the properties of a polaron in a Gaussian quantum dot has been investigated by using Lee-Low-Pines-Hybrechts variational technique and quantum statistical mechanics. It is shown that the ground-state energy increases with increasing temperature and the corresponding polaronic correction decreases. It is thus shown that for entire range of the coupling constant, polaronic effects decrease with increasing temperature.
关键词： Temperature effect,Polaron self-energy,Quantum dot,Gaussian confinement
更新于2025-09-12 10:27:22
-
Evaluation of Assembly Gap from 3D Laser Measurements via FEA Simulation
摘要： This study evaluated the characteristics of temperature field distribution of the concrete box girder based on the middle bridge of Xiaosha River, and the effects of temperature in severely cold area were determined through experiments and finite element model (FEM) analysis. An FEM model of the concrete box girder considering the temperature field was established based on heat transfer theory to verify the accuracy of the model. Moreover, the calculation of the vertical temperature distribution and the temperature distribution along the web plate was conducted. The distribution along the through-thickness direction of the bottom plate and the temperature drop caused by cold waves was evaluated. Results suggest that the published codes and guidebooks were relevant. The effect of the most unfavorable condition of temperature load was also calculated. The result drawn from this research shows that the distribution of temperature field at the cross sections in the severely cold area differed greatly from that in the current code. However, the temperature difference in the top flange was not evident, whereas it was much larger in the bottom flange. The temperature in the web was higher than that in the top flange under solar radiation and was lower during cooling. The results of the temperature effect were much more critical than the result calculated using the vertical temperature gradient in the current code. The tensile stress produced by temperature load may cause cracks. Consequently, sufficient attention should be paid to the damage of thermal effects when calculating the concrete box girder in the northwest of the severely cold area.
关键词： concrete box girder,temperature effect,temperature field distribution,FEM,severely cold area,bridge engineering
更新于2025-09-11 14:15:04