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Deep p-ring trench termination: An innovative and cost-effective way to reduce silicon area
摘要： A new type of high voltage termination, namely the 'deep p-ring trench' termination design for high voltage, high power devices is presented and extensively simulated. Termination of such devices consumes a large proportion of the chip size; the proposed design concept not only reduces the termination silicon area required, it also removes the need for an additional mask as is the case of the traditional p+ ring type termination. Furthermore, the presence of the p-ring under and around the bottom of the trench structure reduces the electric field peaks at the corners of the oxide which results in reduced hot carrier injection and improved device reliability.
关键词： Termination,High Voltage,Power Semiconductor Devices
更新于2025-09-23 15:23:52
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Shining light on growth-dependent surface chemistry of organic crystals: a polarised Raman spectroscopic and computational study of aspirin
摘要： Understanding and controlling crystal surfaces is a critical problem in contemporary materials science. Organic crystal surfaces present the additional complexity of multiple terminations with different functional groups. These alternate terminations influence the surface chemistry and exert control on many material properties. While established tools for surface characterization exist, few provide the chemical information required to unambiguously identify functional groups. Polarized Raman spectroscopy is a versatile tool that can provide detailed chemical information on molecular materials, and, when used in a microscope configuration, can be used to map substrates on a micron scale. In this work, we demonstrate the use of polarized Raman to study the surface chemistry of aspirin. By analyzing crystals grown under a variety of conditions, we relate the growth solvent to the surface termination and reconcile the conflicting results in the literature on the nature of the <100> surface. Our results are supported by detailed first-principles modelling of the surfaces and their vibrational spectra. This study establishes the potential of polarized Raman microscopy as a tool for organic surface science that, when combined with predictive modelling, provides a powerful means to understand and ultimately control surface chemistry.
关键词： aspirin,first-principles modelling,crystal growth,polarized Raman spectroscopy,surface termination,lattice dynamics
更新于2025-09-23 15:23:52
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Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges
摘要： In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for comparison using numerical simulations. Step-DZ-JTE greatly reduces the sensitivity of breakdown voltage (BV) and surface charges (SC). For a 30-μm thick epi-layer, the optimized Step-DZ-JTE shows 90% of the theoretical BV with a wide tolerance of 12.2 × 10^12 cm^?2 to the JTE dose and 85% of the theoretical BV with an improved tolerance of 3.7 × 10^12 cm^?2 to the positive SC are obtained. Furthermore, when combined with the field plate technique, the performance of the Step-DZ-JTE is further improved.
关键词： breakdown voltage (BV),edge termination,junction termination extension (JTE),silicon carbide (SiC)
更新于2025-09-23 15:22:29
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Breakdown enhancement of diamond Schottky barrier diodes using boron implanted edge terminations
摘要： Boron implanted edge terminations have been demonstrated to enhance the breakdown voltages and stabilities of diamond Schottky barrier diodes (SBDs). The edge terminations were achieved by boron implant to form nonconductive amorphous regions under the edges of the Schottky contacts. Direct current measurements show the implanted regions did not contribute to the forward currents and high current densities of about 4000 A/cm2 were obtained at -5 V. By using boron implanted edge terminations, although an increase in leakage currents was observed, the average breakdown voltage of the devices was significantly improved from 79 V to 125 V, which is increased by more than 50%. In addition, the breakdown voltages of the devices without edge terminations degraded quickly after each repeating measurement, whereas the devices with edge terminations became much more stable and no obvious drop in breakdown voltages was observed.
关键词： Boron implant,Schottky diode,Diamond,Edge termination
更新于2025-09-23 15:22:29
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A simulation study of field plate termination in Ga <sub/>2</sub> O <sub/>3</sub> Schottky barrier diodes
摘要： In this work, the field plate termination is studied for Ga2O3 Schottky barrier diodes (SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated. It is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of SiO2, Al2O3, and HfO2. As the thickness increases, the maximum electric field intensity decreases in SiO2 and Al2O3, but increases in HfO2. Furthermore, it is found that SiO2 and HfO2 are suitable for the 600 V rate Ga2O3 SBD, and Al2O3 is suitable for both 600 V and 1200 V rate Ga2O3 SBD. In addition, the comparison of Ga2O3 SBDs between the SiC and GaN counterpart reveals that for Ga2O3, the breakdown voltage bottleneck is the dielectric. While, for SiC and GaN, the bottleneck is mainly the semiconductor itself.
关键词： field plate,termination technique,Ga2O3,Schottky barrier diode
更新于2025-09-23 15:22:29
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Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation
摘要： A series of electric field profile simulations in gallium nitride (GaN) p-i-n vertical diodes with negative bevel termination is carried out to optimize the bevel design. The bevel angles are varied from 90? to 0.1? with reasonably small increments to study the impact of the bevel angle on the electric field profile. The doping densities are also varied to study a more generalized trend; a new parameter defined as transition angle θt is proposed to characterize the effectivity of a beveled edge termination. Considering the potential dry etch damage on the bevel side-wall during device fabrication, the fixed surface charge from the dangling bonds and commonly used dielectric passivation are also added separately to investigate their influence. This article presents a comprehensive simulation study of GaN p-i-n diode with negative beveled edge termination, making it a useful guide for designing a simple and effective beveled edge termination, which eventually helps to enable the routine avalanche in GaN p-i-n diodes.
关键词： beveled edge termination,surface charge,simulation,gallium nitride (GaN),transition angle,silvaco,passivation,p-i-n diode,Avalanche,TCAD
更新于2025-09-23 15:21:01
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Towards a comprehensive understanding of the Si(100)-2×1 surface termination through hydrogen passivation using methylamine and methanol: a theoretical approach
摘要： Using density functional theory, we explored the termination process of Si (100)-2 × 1 reconstructed surface mechanistically through the dehydrogenation of small molecules, considering methyl amine and methanol as terminating reagents. At first, both the terminating reagents form two types of adduct through adsorption on the Si (100)-2 × 1 surface, one in chemisorption mode and the other via physisorption, from which the dehydrogenation process is initiated. By analyzing the activation barriers, it was observed that termination of the Si-surface through the dehydrogenation is kinetically almost equally feasible using either reagent. We further examined in detail the mechanism for each termination process by analyzing geometrical parameters and natural population analysis charges. From bonding evaluation, it is evident that hydrogen abstraction from adsorbates on the Si-surface is asymmetric in nature, where one hydrogen is abstracted as hydride by the electrophilic surface Si and the other hydrogen is abstracted as proton by the neucleophilic surface Si. Moreover, it was also observed that hydride transfer from adsorbate to the Si-surface occurs first followed by proton transfer. Overall, our theoretical interpretation provides a mechanistic understanding of the Si (100)-2 × 1 reconstructed surface termination by amine and alcohol that will further motivate researchers to design different types of decorated semiconductor devices.
关键词： Bonding evaluation,Si(100)-2 × 1 reconstructed surface,Dehydrogenation,Potential energy surface,Surface termination
更新于2025-09-23 15:21:01
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[IEEE 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Rome, Italy (2019.6.17-2019.6.20)] 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Validation of Hertzian Electromagnetism in a Rectangular Waveguide with Rotating PEC Termination
摘要： We provide a general formulation of electromagnetic scattering by a Perfect Electrical Conductor (PEC) object in arbitrary motion in the context of Hertzian Electrodynamics, which is followed by an application to the canonical problem of scattering of dominant TE mode incidence in presence of a PEC termination in accelerated rotational motion. Analytical solutions, which apply for arbitrary variations of angular velocity, are derived and supported with measurement results.
关键词： rectangular waveguide,PEC termination,TE mode,electromagnetic scattering,Hertzian Electrodynamics
更新于2025-09-23 15:19:57
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Controlling the fluorescence properties of nitrogen vacancy centers in nanodiamonds
摘要： Controlling the fluorescence properties of nitrogen vacancy centers in nanodiamonds is an important factor for their use in medical and sensor applications. However, reports providing a deep understanding of the potential factors influencing these properties are rare and focus only on a few influencing factors. The current contribution targets this issue and we report a comprehensive study of the fluorescence properties of NVs in nanodiamonds as a function of electron irradiation fluence and surface termination. Here we show that process parameters such as defect center interactions, in particular, different nitrogen defects and radiation induced lattice defects, as well as surface functionalities have a strong influence on the fluorescence intensity, fluorescence lifetime and the charge state ratio of the NV centers. By employing a time-correlated single photon counting approach we also established a method for fast macroscopic monitoring of the fluorescence properties of ND samples. We found that the fluorescence properties of NV centers may be controlled or even tuned depending upon the radiation treatment, annealing, and surface termination.
关键词： fluorescence lifetime,charge state ratio,nanodiamonds,surface termination,nitrogen vacancy centers,fluorescence properties,electron irradiation
更新于2025-09-19 17:15:36
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[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Polarization measurement method of semiconductor laser
摘要： A high-density low-power parallel I/O for die-to-die communication is presented. The proposed interface includes a low-power transceiver and a high-density low-cost silicon interposer. The link architecture exploits single-sided and capacitive termination, passive equalization in the transmitter, and CMOS logic-style circuits to reduce the power consumption. To achieve a high bump/wire efficiency, single-ended signaling is used. A 4-layer Aluminum silicon interposer is fabricated providing 2.5 mm and 3.5 mm links between prototype transceivers. The transceiver prototype includes 3 transmitters and 3 receivers fabricated in 28 nm STM FD-SOI CMOS technology. The parallel interface operates at 20 Gb/s/wire and 18 Gb/s/wire data rates over the 2.5 mm and 3.5 mm channels with 5.9 and 7.7 dB of loss relative to DC (10.7 and 13.5 dB total loss) at while consuming 0.30 and 0.32 pJ/bit excluding clocking circuits, respectively.
关键词： Chip-to-chip communication,high-speed I/O,silicon Interposer,die-to-die communication,termination,single-ended signaling,passive equalizer,low-power transceivers
更新于2025-09-19 17:13:59