- 标题
- 摘要
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- 实验方案
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30.1: Transparent Basic Logic Circuits with ITO-Stabilized ZnO Thin Film Transistors
摘要： Transparent basic logic circuits integrated by indium tin oxide(ITO)-stabilized ZnO thin film transistors(TFTs) are successfully fabricated on glass substrate. ITO-stabilized ZnO thin films with hybrid-phase microstructure are employed as active layers in the bottom-contact top-gated TFTs. We fabricate 13-stages ring oscillator (RO) with diode-load and pseudo-CMOS inverter respectively in order to tell the difference between those two schemes. The pseudo-CMOS RO exhibits 7V voltage swing and 42kHz oscillation frequency while the diode-load RO exhibiting 3.3V and 71kHz under the same supply voltage of 20V. Meanwhile, basic digital circuits like NOR gates and D flip flops with pseudo-CMOS scheme are also fabricated and they are logically correct. Those logic gates exhibit a typical high level of 4.3V, low level of 200mV and maximum operating frequency of nearly 10kHz under the 10V supply voltage. The transmittance of the chip is 80% to 90% in a 380-nm to 800-nm wavelength.
关键词： Transparent Basic Logic Circuits,ITO-Stabilized ZnO,Thin Film Transistor(TFT)
更新于2025-09-09 09:28:46
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P-1.10: Solution-processed metal oxide semiconductors fabricated with oxygen radical assisting perchlorate aqueous precursors through a new low-temperature reaction route
摘要： In this report, an innovative and simple chemical route for fabricating MO semiconducting low temperature without any fuel additives or special annealing methods is demonstrated. Different from combustion method, the precursor that we compound contains only two kinds of oxidizers. The precursor, which consisted of perchlorate, nitrate, and DI water, is easily converted into In2O3 at an annealing temperature of 250 °C due to oxygen radical assisting decomposition and large amount of heat generation. It is found that perchlorate salt can decompose and form oxide film with high quality at lower temperature when assisted by nitrate salt. The optimized In2O3-TFT fabricated at 250°C via this precursor exhibits a saturate mobility of 14.5 cm2V-1s-1. Furthermore, this approach has been expanded to fabrication films at 350°C and attained improved performance.
关键词： metal oxide semiconductor,perchlorate salt,solution-process,oxygen radical,Thin-film transistor
更新于2025-09-09 09:28:46
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A Dual-functional Superoxide Precursor to Improve the Electrical Characteristics of Oxide Thin Film Transistors
摘要： We investigated a method to simultaneously improve the mobility and reliability of solution-processed zinc tin oxide thin film transistors (ZTO TFTs) using a dual-functional potassium superoxide precursor. Potassium cations in the potassium superoxide (KO2) precursor act as carrier suppliers in the ZTO thin film to improve the carrier (electron) concentration, which allows the potassium-doped ZTO TFT to exhibit high mobility. The anions in the precursor exist as superoxide radicals that reduce oxygen vacancies during the formation of thin oxide film. Consequently, the KO2-treated ZTO TFTs exhibited improved mobility and reliability compared with pristine ZTO TFTs, with an increase in field effect mobility from 5.57 to 8.74 cm2/Vs and a decrease in the threshold voltage shift from 7.18 to 3.85 V, after a positive bias temperature stress test conducted over 5000 sec.
关键词： oxide semiconductor,superoxide radical,solution process,Dual-functional precursor,thin film transistor
更新于2025-09-09 09:28:46
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The Effect of the Thickness and Oxygen Ratio Control of Radio-Frequency Magnetron Sputtering on MgZnO Thin-Film Transistors
摘要： In this study, we use silicon dioxide for a magnesium-zinc-oxide thin-film transistor gate dielectric layer, controlling the thickness of the active layer and the Mg content of the film by radio-frequency (RF) sputtering. With an ideal thickness, a magnesium-zinc-oxide thin-film transistor can function normally. As the active layer thickness is controlled at 10 nm and the sputtering oxygen-flow rate is controlled at 14% to properly compensate for the oxygen vacancies, we can obtain the best features. The result of the analysis showed a field-effect mobility of 5.65 cm2/V · s, a threshold voltage of 3.1 V, a subthreshold swing improved to 0.80, and a current-switch ratio of over five orders of magnitude.
关键词： RF Sputtering,Magnesium Zinc Oxide,Thin-Film Transistor
更新于2025-09-09 09:28:46
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Effect of the Active Channel Thickness Variation in Amorphous In–Zn–Sn–O Thin Film Transistor
摘要： Ternary oxide thin films in the In2O3–ZnO–SnO2 system were studied for potential applications in oxide semiconductor thin film transistors (TFTs). An amorphous In–Zn–Sn–O (a-IZTO) active channel layer was deposited by RF magnetron sputtering at room temperature on an n++ Si substrate. Films from a sintered ceramic target with a nominal chemical composition of In:Zn:Sn = 40:50:10 at.% were prepared with thicknesses ranging from 15 nm to 150 nm, which was followed by annealing at 350 °C for 30 minutes in air. Subsequently, a bilayer Cu/Ti metal contact was deposited as the source/drain electrodes on the top surface through a shadow mask using an e-beam evaporator. The thickness of the active channel layer greatly influenced the characteristics of the oxide thin film transistors. The best transistor characteristics were observed from the test device with a channel thickness of 30 nm and a high on/off current ratio of approximately 108, high field effect mobility of 25 cm2/Vs, low threshold voltage of ?0.1 V, and very small subthreshold swing of 0.14 V/dec.
关键词： Thin Film Transistor,In–Zn–Sn–O,Amorphous Oxide,RF Magnetron Sputtering,IZTO,Channel Thickness
更新于2025-09-09 09:28:46
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Enabling thin-film transistor technologies and the device metrics that matter
摘要： The field-effect transistor kickstarted the digital revolution that propelled our society into the information age. One member of the now large family of field-effect devices is the thin-film transistor (TFT), best known for its enabling role in modern flat-panel displays. TFTs can be used in all sorts of innovative applications because of the broad variety of materials they can be made from, which give them diverse electrical and mechanical characteristics. To successfully utilize TFT technologies in a variety of rapidly emerging applications, such as flexible, stretchable and transparent large-area microelectronics, there are a number of metrics that matter.
关键词： field-effect transistor,digital revolution,flexible electronics,large-area microelectronics,thin-film transistor,stretchable electronics,flat-panel displays,TFT,transparent electronics
更新于2025-09-04 15:30:14
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Synthesis and characterization of photo-crosslinkable coumarin-containing polymer dielectric for organic transistors
摘要： Herein, a photo-crosslinkable coumarin-containing polymer, poly(7-(4-vinyl-benzyloxyl)-4-methylcoumarin) or PVBMC, was prepared, and its physicochemical and electrical properties as a gate dielectric in organic electronic devices, such as organic thin-film transistor (OTFT) and inverter, was evaluated. The crosslinking of PVBMC by exposure to UV light (365 nm) over time was characterized using Fourier-transform IR and UV-visible spectroscopy. The measured capacitance of the cross-linked PVBMC thin film in a metal-insulator-metal-type capacitor was as high as 36.4 pF/mm2. Pentacene-based OTFT and load-type inverter with the cross-linked PVBMC gate dielectric were prepared, and their electrical responses were evaluated under ambient conditions. The OTFT showed dominant hole charge carrier transport behavior with a field-effect mobility of 1.52 · 10-1 cm2/Vs and negligible hysteresis. The load-type inverter based on the OTFT exhibited moderate static and dynamic switching responses to the applied electrical pulse. These results suggest the potential application of photo-crosslinked PVBMC as a gate dielectric in the fabrication of high-performance OTFT-based devices.
关键词： Gate dielectric,Polymer film,Organic thin-film transistor,Photo-crosslinking
更新于2025-09-04 15:30:14
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Electrical Stability of Solution-Processed Indium Oxide Thin-Film Transistors
摘要： We investigated the electrical stability of bottom-gate/top-contact-structured indium oxide (In2O3) thin-film transistors (TFTs) in atmospheric air and under vacuum. The solution-processed In2O3 film exhibits a nanocrystalline morphology with grain boundaries. The fabricated In2O3 TFTs operate in an n-type enhancement mode. Over repeated TFT operation under vacuum, the TFTs exhibit a slight increase in the field-effect mobility, possibly due to multiple instances of the “trapping and release” behavior of electrons at grain boundaries. On the other hand, a decrease in the field-effect mobility and an increase in the hysteresis are observed as the measurement continues in atmospheric air. These results suggest that the electrical stability of solution-processed In2O3 TFTs is significantly affected by the electron-trapping phenomenon at crystal grain boundaries in the In2O3 semiconductor and the electrostatic interactions between electrons and polar water molecules.
关键词： Thin-Film Transistor,Stability,Solution Process,Indium Oxide
更新于2025-09-04 15:30:14
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8.1: <i>Invited Paper:</i> Enhanced Elevated-Metal Metal-Oxide Thin-Film Transistor Technology
摘要： Enhancement to the elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) architecture employing annealing-induced source/drain regions is presently reported, thus further extending the advantage of EMMO over the conventional TFT architectures. The enhancement includes: a 3-mask process resulting in a reduced mask-count, hence manufacturing cost; a bottom-gate self-aligned process resulting in reduced parasitic overlap capacitance, hence signal delay; and a 300-oC process, with the lower temperature offering better compatibility with a wider range of flexible substrates.
关键词： Annealing-Induced Source and Drain,Self-Aligned,Elevated-Metal Metal-Oxide,Flexible Substrate,Indium-Gallium-Zinc Oxide,Mask-Count,Thin-Film Transistor
更新于2025-09-04 15:30:14
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Enhancement of the Electrical Performance of the Organic Ferroelectric Memory Transistor by Reducing the Surface Roughness of the Polymer Insulator with a Homo-Bilayer PVDF-TrFE
摘要： We suggest a feasible method to enhance the electrical performance of the organic nonvolatile memory transistor by reducing the surface roughness of the ferroelectric polymer insulator. A homo-bilayer of poly(vinylidene?uoride-co-tri?uoroethylene) [P(VDF-TrFE)] was used to control the high surface roughness of the conventional single layer [P(VDF-TrFE)] polymer insulator. The smoothening of the polymer insulator was achieved as the Z rms roughness was as low as 11.9 nm compared to the aboriginal single P(VDF-TrFE) ?lm of 18.8 nm. The homo-bilayer P(VDF-TrFE) thin ?lm transistor showed a higher memory on-off ratio (about 100) and mobility (2.9 × 10?2 cm2v?1s?1) compared with the native P(VDF-TrFE) with memory on-off ratio of 16 and mobility of 2.1 × 10?2 cm2v?1s?1. The underlying mechanism for the mobility enhancement which resulted in a high on-off ratio is mainly attributed to the reduction of the surface roughness of the ferroelectric polymer insulator.
关键词： Organic Thin Film Transistor,Ferroelectric,Homobilayer,P(VDF-TrFE)
更新于2025-09-04 15:30:14