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Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlO <sub/>x</sub> underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor
摘要： Although ferroelectric random access memory (FRAM) has superior electric properties, its downside is that it has a relatively larger cell area in comparison other non-volatile memories. We tried to apply TiOx, and AlOx to an underlying layer (TiOx-UL, AlOx-UL) instead of our previously used Ti underlying layer (Ti-UL) for the La-doped lead zirconate titanate (PLZT) capacitor to obtain a high polarization value aiming to a lowering cell area. The failed bit ratio of the FRAM with TiOx-UL was found to be higher than that with AlOx-UL even though polarization values of the PLZT capacitor with both underlying layers are almost the same and much higher than that with Ti-UL. It is strongly suggested that the imprint induced in PLZT by charged defect is a main cause of bit failure by fail-bit analysis. X-ray diffraction and atomic force microscopy observations shows that charged defect density in PLZT over TiOx-UL is possibly higher than that in PLZT over AlOx-UL due to surface roughness of underlying layers.
关键词： FRAM,AlOx underlying layer,Ferroelectric random access memory,production yield,polarization,PLZT capacitor,TiOx underlying layer
更新于2025-09-23 15:21:21
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Optimization of synthesis condition of water-resistant and thin titanium oxide layer-coated Ni-rich layered cathode materials and their cathode performance
摘要： In this study, in order to develop water-resistant LiNiaCobAl1?a?bO2 (a > 0.85, NCA) cathode materials which exhibit high-rate performance, the surface coating of NCA with titanium oxide (TiOx) was examined. The synthesis conditions for the TiOx-coated NCA cathode materials were investigated, by taking into account some essential factors in the surface coating of NCA by TiOx, with a view to improving the rate performance. We successfully prepared the TiOx-coated NCA cathode material, the rate performance of which is superior to that of the conventionally prepared NCA cathode materials, typically using a polyvinylidene difluoride (PVdF) binder and N-methyl-2-pyrrolidone (NMP) solvent. Their surface analysis suggested that the specific surface structure of TiOx layer coated on the NCA particle leads to both a water-resistant property and a high permeability of Li+ ions through it in the charging/discharging process.
关键词： Lithium ion secondary battery,Water-based hybrid polymer binder,TiOx coating layer,Water resistance,Ni-rich lithium transition metal oxide
更新于2025-09-23 15:21:21
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Efficiency enhancement of TiOx electron-transporting layer-based ultrathin p-type c-Si solar cell by reactive sputtering of backside MoOx hole-transporting contact
摘要： The importance of efficient carrier selective transport at the backside contact significantly increases with thickness reduction of c-Si solar cells. Here, MoOx backside hole-transporting layer is fabricated on TiOx electron-transporting layer-based ultrathin c-Si solar cell with a final configuration of Ag/ITO/Mg/TiOx/45 μm p-type c-Si/MoOx/Ag by reactive magnetron sputtering method at room temperature. The effects of oxygen ratio and sputtering power on the film phase, bandgap, and surface roughness are investigated. Moreover, the contact performance between Ag and p-type c-Si is systematically studied and optimized by MoOx insertion. Based on the optimized MoOx thin film, the obtained totally dopant-free cell shows an enhancement of all cell parameters with a resultant high efficiency of 12.81%, which is about 12.8% relatively higher than that of conventional backside p+-based one (11.36%). In the combination of experiment and simulation processes, better performance of MoOx-based cell can be ascribed to the improvement of both electrical and optical performances of the device. The realization of MoOx-based contact at room temperature enables the solar cell fabrication under planar state possible, which can greatly avoid the bowing effect and reduce the yield losses and energy consumption during the fabrication of ultrathin c-Si solar cells.
关键词： reactive sputtering,c-Si solar cell,hole-transporting contact,MoOx,TiOx
更新于2025-09-23 15:21:01
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Low temperature ZnO/TiOx electron-transport layer processed from aqueous solution for highly efficient and stable planar perovskite solar cells
摘要： Owing to the low temperature processability and high charge carrier mobility, ZnO has been successfully employed in perovskite solar cells (PSCs) to act as the electron transport layer. Even so, because of the poor ZnO/perovskite interface chemical stability, achieving highly ef?cient and stable PSCs is still challenging the researchers. Therefore, the optimization of ZnO/perovskite interface by proper surface passivation has been developed for highly ef?cient PSCs. In this work, an environmentally friendly low-temperature aqueous solution-processed TiOx was applied on the aqueous solution-processed ZnO surface to promote the ZnO/perovskite interface stabilization and the interface charge recombination reduction. High performance PSCs with over 19% ef?ciency and relatively good stability were ?nally obtained. This low temperature aqueous solution-processed ZnO/TiOx route is simple and scalable, and facilities the future commercialization of perovskite based photovoltaic technology. Meanwhile, it is also compatible with the ?exible energy devices.
关键词： Electron transport layer,High performance,Aqueous solution-process,Perovskite solar cells,ZnO/TiOx layer
更新于2025-09-16 10:30:52
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Thermal stability improvement of metal oxide-based contacts for silicon heterojunction solar cells
摘要： Metal oxides are interesting materials for use as carrier-selective contacts for the fabrication of doping-free silicon solar cells. In particular, MoOx and TiOx have been successfully used as hole and electron selective contacts in silicon solar cells, respectively. However, it is of paramount importance that good thermal stability is achieved in such contacts. In our work, we combined i-a-Si:H/MoOx based hole contacts with electron contacts featuring i-a-Si:H/TiOx/low work function metal (ATOM) to fabricate doping-free cells, termed MolyATOM cells. We found that the thermal stability of the ATOM contact was improved when the i-a-Si:H was annealed (300°C for 20 min in N2) before depositing TiOx (i.e. pre-TiOx annealing), which reduces the hydrogen content in i-a-Si:H by about 27 %rel, and thereby the H-related degradation of the ATOM contact characteristics. Moreover, it was found that reducing the thickness of the low-work function metal on top of the TiOx enhanced the thermal stability of the ATOM contact. With these adaptations, the MolyATOM cell efficiency was improved by 3.5 %abs, with the highest efficiency of 17.6%. Moreover, the cells show improved thermal stability after the above-mentioned pre-TiOx annealing, which is confirmed by annealing tests at cell level as well as damp-heat tests at module level. The insights of this study could be used to tailor other metal-oxide based electron or hole contacts.
关键词： Doping-free cells,Passivating contact,MoOx,Thermal stability,TiOx,Annealing
更新于2025-09-11 14:15:04