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Solution-processed ultrathin SnS <sub/>2</sub> -Pt nanoplates for photoelectrochemical water oxidation
摘要： Tin disulfide (SnS2) is attracting significant interest due to the abundance of its elements and its excellent optoelectronic properties in part related to its layered structure. In this work, we detail the preparation of ultrathin SnS2 nanoplates (NPLs) through a hot-injection solution-based process. Subsequently, Pt was grown on their surface via in-situ reduction of a Pt salt. The photoelectrochemical (PEC) performance of such nanoheterostructures as photoanode toward water oxidation was afterward tested. Optimized SnS2-Pt photoanodes provided significantly higher photocurrent densities than bare SnS2 and SnS2-based photoanodes previously reported. Mott-Schottky analysis and PEC impedance spectroscopy (PEIS) were used to analyze in more detail the effect of Pt on the PEC performance. From these analyses, we attribute the enhanced activity of the SnS2-Pt photoanodes here reported to a combination of the very thin SnS2 NPLs and the proper electronic contact between Pt nanoparticles (NPs) and SnS2.
关键词： photoanode,Tin disulfide,SnS2-Pt heterostructure,two-dimensional material,photoelectrochemical water oxidation
更新于2025-09-19 17:15:36
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Q-switched mode-locked Nd:GGG waveguide laser with tin disulfide as saturable absorber
摘要： We demonstrate a Q-switched mode-locked waveguide laser operation with high fundamental repetition rate based on the few-layer tin disulfide (SnS2) as a saturable absorber. The excellent nonlinear optical property of SnS2 enables efficient pulsed laser generation. By using Nd:GGG ridge waveguide, the fundamental repetition rate up to 17.9 GHz has been achieved for the mode-locked pulses with duration as short as 30 ps. In addition, this Nd:GGG-based waveguide laser exhibits excellent lasing properties (maximum output power of 115 mW at 1064 nm) by modulation of SnS2, suggesting promising application as miniature ultrafast light sources.
关键词： Waveguide lasers,Tin disulfide (SnS2),Nd:GGG crystal,Q-switched mode-locked laser
更新于2025-09-19 17:13:59
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Enhanced Photoresponse of Indium-Doped Tin Disulfide Nanosheets
摘要： Doping of tin disulfide (SnS2) is an effective strategy to regulate its physical and chemical properties. In this work, In doping was used to manipulate the photoresponse behavior of SnS2-based photodetectors. In-doped SnS2 nanosheets were synthesized via a facile hydrothermal method. It was found that the In doping concentration plays an important role in the size of the fabricated SnS2 nanosheets. With the increase in the In doping concentration, the lateral size of samples increased from ~210 to ~420 nm, but the crystallinity became poor at higher concentrations. EDX-mapping results show that the In was homogeneously distributed in the samples. In addition, a redshift was observed in the binding energy of Sn and S with the increased In doping concentration, which may be due to the p-type doping of In in SnS2. After In doping, the performance of SnS2-based photodetectors was significantly improved. The photoresponse speed of In-doped SnS2-based photodetectors was faster than pristine SnS2-based devices under the illumination of 532 and 405-nm lasers. This work develops an effective approach of In doping to enhance the photoresponse characteristics of SnS2-based photodetectors, and proves that In-doped SnS2 has vast potential in optoelectronic applications.
关键词： photoresponse characteristics,Doping,Tin disulfide,photodetector,Layered metal dichalcogenides
更新于2025-09-12 10:27:22