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Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes
摘要： The 60Co-γ ray total ionizing dose radiation responses of 55-nm silicon-oxide-nitride-oxide-silicon (SONOS) memory cells in pulse mode (programmed/erased with pulse voltage) and dc mode (programmed/erased with direct voltage sweeping) are investigated. The threshold voltage and off-state current of memory cells before and after radiation are measured. The experimental results show that the memory cells in pulse mode have a better radiation-hard capability. The normalized memory window still remains at 60% for cells in dc mode and 76% for cells in pulse mode after 300 krad(Si) radiation. The charge loss process physical mechanisms of programmed SONOS devices during radiation are analyzed.
关键词： dc mode,pulse mode,total ionizing dose,radiation effects,SONOS memory
更新于2025-09-23 15:23:52
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Desynchronization of Pulsed Driving in the Formation of Soliton Kerr Frequency Combs
摘要： MRED is a Python-language scriptable computer application that simulates radiation transport. It is the computational engine for the on-line tool CRèME-MC. MRED is based on c++ code from Geant4 with additional Fortran components to simulate electron transport and nuclear reactions with high precision. We provide a detailed description of the structure of MRED and the implementation of the simulation of physical processes used to simulate radiation effects in electronic devices and circuits. Extensive discussion and references are provided that illustrate the validation of models used to implement specific simulations of relevant physical processes. Several applications of MRED are summarized that demonstrate its ability to predict and describe basic physical phenomena associated with irradiation of electronic circuits and devices. These include effects from single particle radiation (including both direct ionization and indirect ionization effects), dose enhancement effects, and displacement damage effects. MRED simulations have also helped to identify new single event upset mechanisms not previously observed by experiment, but since confirmed, including upsets due to muons and energetic electrons.
关键词： single event upset,single event effects,total ionizing dose,radiation effects,Displacement damage,Monte Carlo,radiation transport,MRED
更新于2025-09-23 15:21:01
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Gate Bias and Length Dependences of Total-Ionizing-Dose Effects in InGaAs FinFETs on Bulk Si
摘要： We evaluate the total-ionizing-dose (TID) responses of InGaAs nMOS FinFETs with different gate lengths irradiated with 10-keV X-rays under different gate biases. The largest degradation after irradiation occurs at VG = -1 V. Radiation-induced trapped positive charge dominates the TID response of InGaAs FinFET transistors, consistent with previous results for InGaAs multi-fin capacitors. Shorter gate-length devices show larger radiation-induced charge trapping than longer gate-length devices, most likely due to the electrostatic effects of trapped charge in the surrounding SiO2 isolation and SiO2/Si3N4 spacer oxides. 1/f noise measurements indicate a high trap density and a non-uniform defect-energy distribution, consistent with a strong variation of effective border-trap density with surface potential.
关键词： 1/f noise,FinFETs,InGaAs,Total-Ionizing-Dose,Bulk Si,border-trap,Gate length dependence,III-V
更新于2025-09-19 17:15:36
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Dose and Single Event Effects on a Color CMOS Camera for Space Exploration
摘要： This paper focuses on the radiation-induced dose and single event effects on a color CMOS camera designed for space missions. Gamma-ray and protons are used to evaluate the tolerance against cumulative dose effects. The dark current of the image sensor is the main parameter impacted by dose effects. Heavy ions testing is performed to evaluate single event effects. SEU, SEFI and SEL have been observed and mitigation techniques were proposed for specific space missions.
关键词： Total Ionizing Dose (TID),Microlens,CMOS Image Sensor (CIS),Single Event Effects (SEE),Displacement Damage Dose (DDD),Pinned Photodiode (PPD),Active Pixel Sensor (APS),Monolithic Active Pixel Sensor (MAPS),Camera,Color filter,Random Telegraph Signal (RTS)
更新于2025-09-04 15:30:14