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Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes
摘要： HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1 × 10^14 and 5 × 10^15 1-MeV- neq/cm^2. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1 × 10^15 neq/cm^2 — a relevant value for a large volume of the upgraded tracker — exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.
关键词： Particle tracking detectors (Solid-state detectors),Solid state detectors,Radiation-hard detectors,Electronic detector readout concepts (solid-state)
更新于2025-09-23 15:23:52
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Optimization of thin n-in-p planar pixel modules for the ATLAS upgrade at HL-LHC
摘要： The ATLAS experiment will undergo around the year 2025 a replacement of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) with a new 5-layer pixel system. Thin planar pixel sensors are promising candidates to instrument the innermost region of the new pixel system, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. The sensors of 50-150 μm thickness, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests. In particular active edge sensors have been investigated. The performance of two different versions of edge designs are compared: the first with a bias ring, and the second one where only a floating guard ring has been implemented. The hit efficiency at the edge has also been studied after irradiation at a fluence of 1015 neq/cm2. Highly segmented sensors will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. In order to reproduce the performance of 50x50 μm2 pixels at high pseudo-rapidity values, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angles with respect to the short pixel direction. Results on the hit efficiency in this configuration are discussed for different sensor thicknesses.
关键词： Hybrid detectors,Radiation-hard detectors,Particle tracking detectors
更新于2025-09-23 15:23:52
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A two-tier monolithically stacked CMOS Active Pixel Sensor to measure charged particle direction
摘要： In this work we present an innovative approach to particle tracking based on CMOS Active Pixel Sensors (APS) layers, monolithically integrated in an all-in-one chip featuring multiple, stacked, fully functional detector layers capable to provide momentum measurement (particle direction) within a single detector by using multiple layer impact point coordinates. The whole system will results in a very low material detector, since each layer can be thinned down to tens of micrometres, thus dramatically reducing multiple scattering issues. To build such a detector, we rely on the capabilities of the CMOS vertical scale integration (3D-IC) 130 nm Chartered/Tezzaron technology, used to integrate two fully-functional CMOS APS matrix detectors, including both sensing area and control/signal elaboration circuitry, stacked in a monolithic device by means of Through Silicon Via (TSV) connections. Such a detector would allow accurate estimation of the impact point of an ionizing particle and of its incidence angle. Two batches of the first chip prototype have been produced and characterized using particle beams (e.g. protons) demonstrating the suitability of particle direction measurement with a single, multiple layers, 3D vertically stacked APS CMOS detector.
关键词： Particle tracking detectors (Solid-state detectors),VLSI circuits
更新于2025-09-23 15:23:52
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Performance simulation of a MRPC-based PET imaging system
摘要： The less expensive and high resolution Multi-gap Resistive Plate Chamber (MRPC) opens up a new possibility to find an efficient alternative detector for the Time of Flight (TOF) based Positron Emission Tomography, where the sensitivity of the system depends largely on the time resolution of the detector. In a layered structure, suitable converters can be used to increase the photon detection efficiency. In this work, we perform a detailed GEANT4 simulation to optimize the converter thickness towards improving the efficiency of photon conversion. A Monte Carlo based procedure has been developed to simulate the time resolution of the MRPC-based system, making it possible to simulate its response for PET imaging application. The results of the test of a six-gap MRPC, operating in avalanche mode, with 22Na source have been discussed.
关键词： Gaseous imaging and tracking detectors,Gaseous detectors
更新于2025-09-23 15:23:52
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Study of the depletion depth in a frontside biased CMOS pixel sensors
摘要： Depletion of the sensitive volume for semiconductor based detectors is a key to achieve high performance. It is for instance required for charged particle detection in highly radiative environment and for X-ray spectroscopy. PIPPER-2 is a CMOS pixel sensor featuring an architecture that allows the application of the reverse bias of the pn junction from the frontside (cathode), on the electronic side, without process modification. Biasing voltages up to 45 V have been applied to sensor prototypes fabricated on two different high resistivity substrates: a thin epitaxial layer (1 kW cm) and a 40 μm thick bulk substrate (600 W cm). Calculations from a simplified analytical model and 3D-TCAD simulations were conducted to predict the evolution of the depletion depth with the bias voltage. These expectations were compared to measurements of PIPPER-2 illuminated with two X-ray energies. We conclude that the frontside biasing method allows the full-depletion of the thin epitaxial layer. In contrast, depletion of the bulk substrate reaches about half-depth but X-rays are still detected over the full depth.
关键词： X-ray detectors,Particle tracking detectors (Solid-state detectors)
更新于2025-09-23 15:22:29
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Radiation tolerance characterization of Geiger-mode CMOS avalanche diodes for a dual-layer particle detector
摘要： An array of Single Photon Avalanche Diodes (SPAD), fabricated in a 180 nm CMOS technology featuring a high voltage (HV) option, has been investigated in terms of radiation tolerance, in view of the design of low material budget dual-tier detectors for charged particle tracking based on the coincidence of signals coming from pairs of vertically aligned pixels. Each pixel in the array includes both the processing electronics and the sensing element in a monolithic structure. The test vehicles were irradiated with 10 keV X-rays up to a dose of 1 Mrad (SiO2) and with neutrons up to a fluence of 1011 n_eq cm?2. A selection of the characterization results are presented together with the main features of a new large scale SPAD array to be fabricated in a 150 nm CMOS technology and ready for vertical interconnection in a dual layer structure.
关键词： Pixelated sensor,CMOS,Single Photon Avalanche Diode,Radiation tolerance,Tracking detectors
更新于2025-09-23 15:22:29
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Lab and test beam results of irradiated silicon sensors with modified ATLAS pixel implantations
摘要： In Dortmund, planar silicon pixel sensors were designed with modified n+-implantations and produced in n+-in-n sensor technology. Baseline for these new designs was the layout of the IBL planar silicon pixel sensor with a 250 μm × 50 μm pitch. The different implantation shapes are intended to cause electrical field strength maxima to increase charge collection after irradiation and thus increase particle detection efficiency. To test and compare the different pixel designs, the modified pixel designs and the standard IBL design are placed on one sensor which can be read out by a FE-I4. After irradiation with protons and neutrons respectively the performance of several sensors is tested in laboratory and test beam measurements. The presented laboratory results verify that all sensors are fully functional after irradiation. The the test beam measurements show different results for sensors irradiated to the same fluence with neutrons in Sandia compared to sensors irradiated with neutrons in Ljubljana or with protons at CERN PS.
关键词： Particle tracking detectors (Solid-state detectors),Radiation-hard detectors,Particle tracking detectors,Solid state detectors
更新于2025-09-23 15:21:21
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Dynamic range and resolving power of the Timepix detector to heavy charged particles
摘要： The spectrometric and particle tracking response of the Timepix detector for charged particle detection was examined for energetic (i.e. penetrating) heavy charged particles in a wide range of energies and directions. The aim of this study was to examine the detector’s resolving power including particles approaching the minimum-ionizing regime, in particular energetic protons. The per-pixel energy range, of importance namely for heavy charged particles, was also investigated. This work complements and extends the ongoing task to analyze and describe the response and resolving power of the detector in a wide range of particle types, energy (energy loss) and direction. The methodology of event discrimination in terms of these degrees of freedom was expanded and re?ned. Resolution and event classi?cation were based on analyses of cluster morphology parameters together with spectrometric, tracking and correlated derived quantities such as linear-energy-transfer (LET) and ratio cluster height to cluster path length.
关键词： Particle tracking detectors (Solid-state detectors),dE/dx detectors,Pixelated detectors and associated VLSI electronics,Heavy-ion detectors
更新于2025-09-23 15:21:01
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Simulation of 3D-Silicon sensors for the TIMESPOT project
摘要： The experimental conditions in future High Luminosity LHC experiments require new detector systems with increased performances compared to the current state of the art. In this context, increasing spacial resolution and including time measurement with a resolution of less than 50 ps for particle tracking systems can avoid false track reconstruction due to event pileup. For this kind of future tracking detectors the 3D silicon sensor technology appears as a good option. In this context the TIMESPOT initiative was launched. Concerning the development of the sensor, different geometrical solutions have been explored and simulated to optimize the timing response of the single pixel sensor using Sentaurus TCAD. The configuration with the best electric field characteristics for timing was selected for signal simulation. In order to compensate the very time-consuming behavior of TCAD simulations, a faster charge transport simulator with TCAD and Geant4 support is under development. Further sensor configurations, including a first primitive capacitive and resistive load, were also simulated and evaluated. This paper shows a general overview of the project with particular attention to the silicon sensor development. First results are presented.
关键词： Fast timing tracking,3D silicon sensors,Tracking detectors,sensor simulation,TCAD
更新于2025-09-23 15:21:01
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Development of CMOS pixel sensors for the upgrade of the ALICE Inner Tracking System
摘要： The ALICE Collaboration is preparing a major upgrade of the current detector, planned for installation during the second long LHC shutdown in the years 2018-19, in order to enhance its low-momentum vertexing and tracking capability, and exploit the planned increase of the LHC luminosity with Pb beams. One of the cornerstones of the ALICE upgrade strategy is to replace the current Inner Tracking System in its entirety with a new, high resolution, low-material ITS detector. The new ITS will consist of seven concentric layers equipped with Monolithic Active Pixel Sensors (MAPS) implemented using the 0.18 μm CMOS technology of TowerJazz. In this contribution, the main key features of the ITS upgrade will be illustrated with emphasis on the functionality of the pixel chip. The ongoing developments on the readout architectures, which have been implemented in several fabricated prototypes, will be discussed. The operational features of these prototypes as well as the results of the characterisation tests before and after irradiation will also be presented.
关键词： Particle tracking detectors,Particle tracking detectors (Solid-state detectors),Large detector systems for particle and astroparticle physics
更新于2025-09-19 17:15:36