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Analysis of current transport mechanisms in sol-gel grown Si/ZnO heterojunction diodes in high temperature environment
摘要： This paper analyzes the electrical parameters of Si/ZnO heterojunction diodes in the wide temperature range, i.e. from room temperature (298 K) to 573 K to study the electrical performance of the diode in very high temperature environment. In this work, sol-gel derived nanostructured ZnO thin film was deposited directly on p-Si substrate using spin coating technique. Electrical parameters, such as rectification ratio, reverse saturation current, ideality factor, barrier height, series resistance and activation energy are derived from current-voltage characteristics of the device, measured using semiconductor parameter analyzer in the temperature range of 298 K–573 K for bias voltage of ± 5 V. The ideality factor, barrier height and series resistance is derived as 2.66, 0.789 eV and 3554 Ω respectively at 298 K, whereas at 573 K these are modified as 1.58, 1.15 eV and 801 Ω respectively. The above-mentioned results indicate the presence of spatial barrier height inhomogeneities (BHI) in high temperature environment. Hence, we have included the Gaussian distribution of spatial BHI in our analysis to calculate the effective Richardson constant (RC). Before inclusion of spatial BHI, RC was 4.026 × 10^{-6} Acm^{-2}K^{-2}. However, after inclusion of spatial BHI, RC is modified to 29.14 Acm^{-2}K^{-2}, which is nearer to the theoretical value (32 Acm^{-2}K^{-2}). Therefore, this study indicates that our as-fabricated Si/ZnO heterojunction diodes can sustain their electrical behaviour in very high temperature environment also and they are suitable for high temperature electronic and optoelectronic application.
关键词： Current-voltage characteristics,Richardson constant,Trap-assisted tunneling,Spatial barrier inhomogeneities,Heterojunction diode,Semiconductor thin film
更新于2025-09-23 15:22:29
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Research on Degradation of GaN-Based Blue LED Caused by <i>?3</i> Radiation under Low Bias
摘要： GaN multiquantum-well blue light-emitting diodes (LEDs) were radiated with 60Co c-rays for accumulated doses up to 2.5 Mrad (SiO2). The radiation-induced current and 1/f noise degradations were studied when the devices operate at the low bias voltage. The current increased by 2.31 times, and the 1/f noise increased by 275.69 times after a dose of 2.5 Mrad (SiO2). Based on Hurkx’s trap-assisted tunneling model, the degradation of current was explained. c radiation created defects in the space-charge region of LEDs. These defects as generation-recombination centers lead to the increase in the current. In addition, based on the quantum l/f noise theory, the degradation of 1/f noise might be also attributed to these defects, which caused an increase in the Hooge constant and a decrease in the carrier lifetimes. The current and 1/f noise degradations can be attributed to the same physical origin. Compared to the current, the 1/f noise parameter is more sensitive, so it may be used to evaluate the radiation resistance capability of GaN blue LEDs.
关键词： Hooge constant,current degradation,1/f noise degradation,trap-assisted tunneling,γ radiation,GaN,LED
更新于2025-09-23 15:19:57
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First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge
摘要： This letter represents the ?rst direct experimental demonstrations and mechanism proposal regarding abnormal palladium diffusion into germanium (Ge). Our experiments indicated that excess Ge atoms among palladium germanide alloy formation indirectly induce the abnormal out-diffusion of mass palladium atoms into Ge. Consequently, palladium germanide alloy on both n-type and p-type Ge form ohmic-like Schottky junctions. To identify this phenomenon, ?rst-principle calculations and technology computer-aided design simulation were used to evaluate the electrical in?uence of palladium atoms in Ge. We discovered that the activated palladium atoms in Ge induce large midgap bulk-trap states, which contribute to a severe increment of trap-assisted tunneling current at the palladium germanide/Ge junction.
关键词： Schottky junction,First-principles calculations,palladium germanide,technology computer-aided design,germanium,trap-assisted tunneling,fermi-level pinning effect
更新于2025-09-10 09:29:36
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Physical nature of electrically detected magnetic resonance through spin dependent trap assisted tunneling in insulators
摘要： We show that electrically detected magnetic resonance (EDMR), through spin dependent trap assisted tunneling (SDTT) in amorphous SiC, exhibits approximately equal amplitudes at very high (8.5 T) and very low (0.013 T) magnetic fields at room temperature. This result strongly supports an SDTT/EDMR model in which spins at two nearby sites involved in a tunneling event are coupled for a finite time in circumstances somewhat analogous to spin pair coupling in the spin dependent recombination/EDMR model of Kaplan, Solomon, and Mott (KSM) [Kaplan, Solomon, and Mott, J. Phys. Lett. 39, 51 (1978)]. Since a comparable near zero magnetic field change in resistance is also observed in these samples, our results support the idea that this magnetoresistance response is also the result of a KSM-like mechanism involving SDTT. Additionally, we observe a large enhancement in SDTT/EDMR at high field (8.5 T) for temperatures below 50 K, which suggests the potential utility of SDTT in spin based quantum computation and other spintronic applications.
关键词： spin dependent trap assisted tunneling,electrically detected magnetic resonance,spintronics,amorphous SiC,magnetoresistance
更新于2025-09-04 15:30:14