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Broadband polarized photodetector based on p-BP/n-ReS <sub/>2</sub> heterojunction
摘要： Two-dimensional (2D) atomic crystals, such as graphene, black phosphorus (BP) and transition metal dichalcogenides (TMDCs) are attractive for use in optoelectronic devices, due to their unique crystal structures and optical absorption properties. In this study, we fabricated BP/ReS2 van der Waals (vdWs) heterojunction devices. The devices realized broadband photoresponse from visible to near infrared (NIR) (400–1800 nm) with stable and repeatable photoswitch characteristics, and the photoresponsivity reached 1.8 mA/W at 1550 nm. In addition, the polarization sensitive detection in the visible to NIR spectrum (532–1750 nm) was demonstrated, and the photodetector showed a highly polarization sensitive photocurrent with an anisotropy ratio as high as 6.44 at 1064 nm. Our study shows that van der Waals heterojunction is an effective way to realize the broadband polarization sensitive photodetection, which is of great significance to the realization and application of multi-functional devices based on 2D vdWs heterostructures.
关键词： broadband,polarized photodetection,vdWs heterojunction,p-BP/n-ReS2
更新于2025-09-19 17:13:59
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Carrier lifetime exceeding 81 ns in single crystalline perovskite nanowires enable large on-off ratio photodetectors
摘要： Single crystalline perovskite nanowires are ideal candidates for photodetection and other optoelectronic applications due to their unique advantage of allowing the manipulation of light and carriers in nanoscale via the naturally formed boundaries. Although significant efforts have been made to grow high quality single crystalline perovskite nanowires, their carrier life times are much shorter than their bulk single crystal counterparts. Here, based on the surface initiated solution growth method with fine kinetic control, we fabricate high quality single crystalline MAPbI3 nanowires with the carrier life time as long as 81 ns, which outperforms the performances of all other solution processed single crystalline MAPbI3 nanowires. The as-prepared metal-semiconductor-metal photodetector has an extremely low dark current of 180 fA under 1 V bias, and a current of 340 pA under illumination of 10.2 mW/cm2, corresponding to an on-off current ratio of 1880, which is the largest on-off ratio in photodetectors based on MAPbI3 nanowires without any passivation treatment. Such superior performance is attributed to the long carrier life time of the as-grown MAPbI3 nanowires with reduced grain boundaries. The realized high performance MAPbI3 nanowire photodetector would find potential applications in imaging sensors.
关键词： Nanowire,Perovskite,Single-crystalline,Photodetection,Carrier life time
更新于2025-09-19 17:13:59
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Bio-inspired transparent MXene electrodes for flexible UV photodetectors
摘要： As a sort of rising two dimensional materials, MXenes have huge potential for they not only possess superb electrical conductivity and high hydrophilicity, but also enjoy mechanical strength and flexibility. Yet their applications to optoelectronics as electrodes are limited owing to the tradeoff between high transmittance and low conductive resistance, as a low resistance needs more conductive materials, reducing transmission by producing a larger surface coverage. To tackle this bottleneck, here a novel bio-inspired strategy is reported to acquire transparent flexible electrodes with both high transparency and high conductivity which outperform other transparent electrodes. It simultaneously exhibits reliable flexibility during a series of mechanical tests. All these properties of MXene electrodes result from well-designed hierarchical leaf vein network structure and strong adhesion between MXene and urea-treated substrates. In applications, a free-standing semi-transparent UV photodetector is constructed using the MXene electrodes, showing high-performance UV detection as well as superb flexibility and stability. The method provides a new route for MXene based optoelectronics.
关键词： bio-inspired design,MXene,UV photodetection,transparent electrodes,flexible photodetectors
更新于2025-09-19 17:13:59
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Photoresponse of wafer-scale palladium diselenide films prepared by selenization method
摘要： Palladium diselenide (PdSe2) films exhibit a high charge carrier mobility and sensitivity in photodetection. In this work, wafer-scale PdSe2 thin films with controllable thickness have been synthesized by the selenization of Pd films. A PdSe2-based photodetector can detect a broad wavelength ranging from 420 nm to 1200 nm. The responsivity and detectivity can reach 1.96 × 103 A W-1 and 1.72 × 1010 W / Hz1/2 at VSD = 3 V, respectively. The figure of merit of the photodetection are comparable to the mechanically exfoliated PdSe2 based photodetector. This work demonstrated that selenization is a facile method to synthesize PdSe2 films in large scale and the films are promising for broadband photodetection.
关键词： palladium diselenide,field effect transistors,two-dimensional layered material,photodetection
更新于2025-09-16 10:30:52
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Mid‐Infrared Photonics Using 2D Materials: Status and Challenges
摘要： In recent years, a variety of 2-dimensional (2D) materials including graphene, topological insulators, transition metal dichalcogenides, and black phosphorus have been utilized in photonics and optoelectronics applications. Since the mid-infrared (MIR) region has a significant role in various fields, rapid progress has been made on photonics and optoelectronics applications using 2D materials. Herein, the progress in the photonics devices that exploit the unique properties of 2D materials for a range of MIR applications is summarized, focusing on ultrafast light generation, MIR light modulation, and photodetection. By taking advantage of ultrafast light response, broadband absorption, and high carrier mobility of 2D materials, femtosecond lasers, broadband optical modulators, and high-responsivity photodetectors are achieved. Some perspectives on 2D material-based MIR photonics are highlighted. Due to their MIR bandgaps, small size, high carrier mobility, and easy integration, 2D materials are appealing for MIR photonics applications. Moreover, the availability of an increasingly broad library of 2D materials with variable electronic and optical properties, and the ability to be thinned and restacked into functional and complex assembled structures, enable the development of a highly integrated MIR photonic chip, which will make information technology greener, faster, and lower in energy consumption.
关键词： light modulation,photodetection,mid-infrared,2D materials
更新于2025-09-12 10:27:22
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Ultrasensitive ZnO Nanowire Photodetectors with a Polymer Electret Interlayer for Minimizing Dark Current
摘要： Zinc oxide (ZnO) nanowires have attracted extensive interests in ultraviolet photodetection fields owing to their outstanding optoelectronic properties. The detectivity of ZnO nanowire photodetectors is often limited by large dark current due to a number of defect-induced carriers. Herein, a thin layer of poly(2-vinyl naphthalene) (PVN) is introduced between the ZnO nanowire and gate dielectric to deplete defect-induced carriers with the help of the electrostatic field generated by trapped electrons in the PVN layer. The dark current is successfully reduced from 2.2 × 10?9 to 1.6 × 10?14 A. Particularly, ZnO nanowire photodetectors with a large Ilight/Idark ratio (>107), high photoresponsivity (>106 A W?1), and ultrahigh detectivity (>1018 Jones) are achieved, which are among the best performance in reported ZnO-based photodetectors. The present simple scheme offers a new strategy to suppress dark current in semiconducting nanomaterials for ultrasensitive photodetection applications.
关键词： polymer electret,detectivity,ultraviolet photodetection,ZnO nanowires
更新于2025-09-12 10:27:22
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A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors
摘要： 2D layered materials are an emerging class of low-dimensional materials with unique physical and structural properties and extensive applications from novel nanoelectronics to multifunctional optoelectronics. However, the widely investigated 2D materials are strongly limited in high-performance electronics and ultrabroadband photodetectors by their intrinsic weaknesses. Exploring the new and narrow bandgap 2D materials is very imminent and fundamental. A narrow-bandgap noble metal dichalcogenide (PtS2) is demonstrated in this study. The few-layer PtS2 field-effect transistor exhibits excellent electronic mobility exceeding 62.5 cm2 V?1 s?1 and ultrahigh on/off ratio over 106 at room temperature. The temperature-dependent conductance and mobility of few-layer PtS2 transistors show a direct metal-to-insulator transition and carrier scattering mechanisms, respectively. Remarkably, 2D PtS2 photo detectors with broadband photodetection from visible to mid-infrared and a fast photoresponse time of 175 μs at 830 nm illumination for the first time are obtained at room temperature. Our work opens an avenue for 2D noble-metal dichalcogenides to be applied in high-performance electronic and mid-infrared optoelectronic devices.
关键词： broadband photodetection,PtS2,on-off ratio,field-effect transistors,mobility
更新于2025-09-12 10:27:22
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Exploiting Bulk Photovoltaic Effect in a 2D Trilayered Hybrid Ferroelectric for Highly Sensitive Polarized Light Detection
摘要： Polarized light detection is attracting increasing attention for its wide applications ranging from optical switches to high-resolution photodetectors. Two-dimensional (2D) hybrid perovskite-type ferroelectrics combining inherent light polarization dependence of bulk photovoltaic effect (BPVE) with their excellent semiconducting performances present significant potential in this portfolio. Here, we first report the BPVE-driven highly sensitive polarized light detection in a 2D trilayered hybrid perovskite ferroelectric, (allyammonium)2(ethylammonium)2Pb3Br10 (1), which shows superior BPVE with a near-bandgap photovoltage of ~ 2.5 V and a high on/off switching ratio of current (~ 104). Notably, driven by the superior BPVE, 1 exhibits highly sensitive polarized light detection with a polarization ratio as high as ~15, which is far more beyond than those of structural anisotropy-based monocomponent devices. As far as we know, this is the first realization of BPVE-driven polarized light detection in hybrid perovskite ferroelectrics. This work opens a new avenue for the design of highly sensitive polarized light detection by exploiting the sinusoidal behavior of BPVE current in 2D multilayered hybrid perovskite ferroelectrics.
关键词： Ferroelectric photovoltaic,Two-dimensional hybrid perovskite,Polarization-sensitive photodetection,Bulk photovoltaic effect,Ferroelectric material
更新于2025-09-12 10:27:22
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Exploiting Bulk Photovoltaic Effect in a 2D Trilayered Hybrid Ferroelectric for Highly Sensitive Polarized Light Detection
摘要： Polarized light detection is attracting increasing attention for its wide applications ranging from optical switches to high-resolution photodetectors. Two-dimensional (2D) hybrid perovskite-type ferroelectrics combining inherent light polarization dependence of bulk photovoltaic effect (BPVE) with their excellent semiconducting performances present significant potential in this portfolio. Here, we first report the BPVE-driven highly sensitive polarized light detection in a 2D trilayered hybrid perovskite ferroelectric, (allyammonium)2(ethylammonium)2Pb3Br10 (1), which shows superior BPVE with a near-bandgap photovoltage of ~ 2.5 V and a high on/off switching ratio of current (~ 104). Notably, driven by the superior BPVE, 1 exhibits highly sensitive polarized light detection with a polarization ratio as high as ~15, which is far more beyond than those of structural anisotropy-based monocomponent devices. As far as we know, this is the first realization of BPVE-driven polarized light detection in hybrid perovskite ferroelectrics. This work opens a new avenue for the design of highly sensitive polarized light detection by exploiting the sinusoidal behavior of BPVE current in 2D multilayered hybrid perovskite ferroelectrics.
关键词： Ferroelectric photovoltaic,Two-dimensional hybrid perovskite,Polarization-sensitive photodetection,Bulk photovoltaic effect,Ferroelectric material
更新于2025-09-12 10:27:22
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Near Infrared Absorption Enhancement of Graphene for High-Responsivity Photodetection
摘要： Near-infrared strong light harvesting of graphene is obtained based on multipole resonance interference of silicon nanodisks. The ultrathin design allows the active area with effective generation of photo carriers, paving a new way for small footprint high-speed and high-responsivity photon detection.
关键词： multipole resonances,absorption enhancement,graphene photodetection
更新于2025-09-12 10:27:22