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Dual‐Channel Solar‐Blind UV Photodetector Based on β‐Ga <sub/>2</sub> O <sub/>3</sub>
摘要： The photoconductivity (PC) of β-Ga2O3 single crystals is investigated. A complex PC band is detected in the UV region of 230–270 nm. The PC spectra recorded in polarized light are different for the E∥band E⊥borientations of the electric vector of light wave Ewith respect to the baxis of the β-Ga2O3 crystal. Anisotropy of PC is utilized to create a dual-channel UV photodetector with maximum channel sensitivity centered at 245 and 262 nm, for the E∥b and E⊥b orientations, respectively. The sensitivity and some other parameters of the UV photodetector are estimated.
关键词： anisotropies,β-Ga2O3 single crystals,UV photodetectors,photoconductivities
更新于2025-09-19 17:13:59
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Anisotropic Plasmonic Nanostructure Induced Polarization Photoresponse for MoS <sub/>2</sub> a??Based Photodetector
摘要： Techniques that give anisotropic properties to 2D materials with isotropic crystal structures will enable 2D material based photodetectors to possess polarization sensitivity in the detection of polarization, which will greatly improve the spatial resolution of photodetectors. Here, an MoS2-based polarization photodetector induced by anisotropic plasmonic nanostructure is prepared. The integrating anisotropic plasmonic structures on a few-layer MoS2 nanosheet can induce polarization photoresponse and enhance the responsivity of MoS2 device at the same time. The ratio of the maximum to minimum photocurrents reached 1.45 along two perpendicular polarizations. It proves that anisotropic nanostructure induced polarization sensitivity will pave a new way for the fabrication of polarization photodetectors.
关键词： polarization,plasmonic nanostructure,2D materials,photodetectors
更新于2025-09-19 17:13:59
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Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications
摘要： Ultraviolet photodetectors (UV PDs) with “5S” (high sensitivity, high signal-to-noise ratio, excellent spectrum selectivity, fast speed, and great stability) have been proposed as promising optoelectronics in recent years. To realize high-performance UV PDs, heterojunctions are created to form a built-in electrical field for suppressing recombination of photogenerated carriers and promoting collection efficiency. In this progress report, the fundamental components of heterojunctions including UV response semiconductors and other materials functionalized with unique effects are discussed. Then, strategies of building PDs with lattice-matched heterojunctions, van der Waals heterostructures, and other heterojunctions are summarized. Finally, several applications based on heterojunction/heterostructure UV PDs are discussed, compromising flexible photodetectors, logic gates, and image sensors. This work draws an outline of diverse materials as well as basic assembly methods applied in heterojunction/heterostructure UV PDs, which will help to bring about new possibilities and call for more efforts to unleash the potential of heterojunctions.
关键词： ultraviolet photodetectors,heterojunctions,semiconductors,van der Waals heterostructures,lattice-matched heterojunctions
更新于2025-09-19 17:13:59
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Ultrasensitive Multilayer MoS <sub/>2</sub> a??Based Photodetector with Permanently Grounded Gate Effect
摘要： 2D materials, specifically MoS2 semiconductors, have received tremendous attention for photo-sensing applications due to their tunable bandgap and low noise levels. A unique photodetector using multilayer MoS2 as the semiconductor channel, in which the gate electrode of the device is permanently connected to the grounded source electrode to introduce rectification, is reported. The proposed grounded-gate photodiode exhibits high photo-responsivity of 1.031 A W?1, excellent photodetectivity (>6 × 1010 jones), and highly stable rise/fall time response (100–200 ms) under illumination of visible light (at the wavelengths of 405, 532, and 638 nm). Numerical device simulations using quantum transport methods and photoconductive effects are used to explain the device operation. It is also suggested that the gate metal work function can be carefully chosen to increase the sensitivity of the grounded-gate photodetector by suppressing the dark current. The grounded-gate device proposed, owing to the properties of rectifying behavior, low contact resistance, consistent photoresponsivity, and linear sensitivity, provides a new platform for next-generation applications in the field of electronics and optoelectronics.
关键词： photodetectors,molybdenum disulfide,grounded-gate effect,photodiodes,transition metal dichalcogenides
更新于2025-09-19 17:13:59
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Tailoring the solar-blind photoresponse characteristics of ?2-Ga2O3 epitaxial films through lattice mismatch and crystal orientation
摘要： Realizing manipulation of the photoelectric properties of wide bandgap semiconductors is a main challenge for succeeding next-generation functional optoelectronics. As an intriguing wide bandgap semiconductor, β-Ga2O3 (Eg ~ 4.9 eV) is emerging as a promising candidate for photodetectors operating in solar-blind region. Here, we show that by selecting substrates with different symmetries and lattice parameters [i.e. (100) MgO, (100) MgAl2O4 and (0001) α-Al2O3], epitaxial β-Ga2O3 films with (100)- or (2?01)-oriented could be fabricated. We found that the photoresponse characteristics are strongly correlated with the lattice mismatch and film orientation. In particular, (100)-oriented β-Ga2O3 film grown on MgO substrate with smaller lattice mismatch exhibited a 254 nm responsivity of 0.1 A·W-1 and detectivity of 4.3×1012 Jones, which are approximately an order of magnitude higher than that of the (2?01)-oriented β-Ga2O3 film. Our work may provide a strategy to develop further high performance solar-blind photodetectors.
关键词： β-Ga2O3,crystal orientation,epitaxial films,lattice mismatch,solar-blind photodetectors
更新于2025-09-19 17:13:59
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Role of nanowire length on the performance of self-driven NIR Photodetector based on mono/bi-layer graphene (camphor)/Si-Nanowire Schottky junction
摘要： In this article, we have demonstrated a solid carbon source such as camphor as a natural precursor to synthesize a large area mono/bi-layer graphene (MLG) sheet to fabricate nanowire junction based near infrared photodetectors (NIRPDs). In order to increase the surface-to-volume ratio, we have developed Si-nanowire arrays (SiNWAs) of varying lengths by etching up to 2V with a fast rise and decay time of 34/13 ms. A tremendous enhancement has been witnessed from 36 μA/W to 22 mA/W in the responsivity at 0V for MLG/30 min SiNWAs than planar Si. Then, the camphor based MLG/Si and MLG/SiNWAs schottky junction photodetectors have been fabricated to achieve efficient response with self-driven properties in the near infrared (NIR) regime. Due to a balance between light absorption capability and surface recombination centres, devices having SiNWAs obtained by etching for 30 min shows a better photoresponse, sensitivity and detectivity. Fabricated NIRPDs can also be functioned as self-driven device which are highly responsive and very stable at low optical power signals indicating an important development of self-driven NIRPDs based on camphor based MLG for future optoelectronic devices.
关键词： Si nanowire arrays,Graphene,Camphor,Responsivity and near infrared photodetectors.
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Investigation of Resonant-Cavity-Enhanced GeSn Photodetectors in Short-Wavelength Infrared Regime
摘要： GeSn with a 10% Sn content for resonant-cavity-enhanced photodetectors (RCE PDs) was grown and the RCE PDs was designed for 2000-nm operation, exhibiting a quantum efficiency up to 91%. This work shows RCE GeSn PDs can be a promising route toward high-response SWIR detection.
关键词： quantum efficiency,Resonant-cavity-enhanced photodetectors,GeSn
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Germanium Photodetectors with 60-nm Absorption Coverage Extension and ～2× Quantum Efficiency Enhancement across L-Band
摘要： Germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors were demonstrated with a 60 nm extension on the absorption coverage and a ~2× enhancement on the quantum efficiency across the L-band.
关键词： germanium,longer wavelength detection,photodetectors,silicon nitride stressor,CMOS-compatible
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - High-Speed Germanium Pin Photodiodes Integrated on Silicon-on-Insulator Nanophotonic Waveguides
摘要： Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of -13.9, -12.7, and -11.3 dBm.
关键词： silicon-on-insulator,complementary metal-oxide-semiconductor technology,silicon nanophotonics,germanium,optical photodetectors
更新于2025-09-16 10:30:52
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Giant detectivity of ZnO-based self-powered UV photodetector by inserting an engineered back gold layer using RF sputtering
摘要： The realization of high-responsivity, self-powered and low-cost ultraviolet (UV) photodetector (PD) based on eco-friendly and earth-abundant compounds, remains far from satisfactory for future optoelectronic applications. In this paper, we demonstrated a new high-performance UV-PD based on planar ZnO thin-film, efficiently operating without any power supply. The proposed device was elaborated by evaporating an engineered back metallic layer onto the glass substrate and then depositing ZnO thin layer through RF sputtering technique. The sensor structural and optical properties were systematically analyzed by the techniques of X-ray diffraction (XRD) and UV–Vis absorbance spectrometry. The resulted ZnO UV-PD showcased a clear and distinctive photovoltaic behavior. Interestingly, it also demonstrated a high responsivity of 0.38A/W and a giant detectivity exceeding 1014 Jones at zero bias, which is much higher than other reported self-powered UV-PD despite the use of an All-ZnO structure. The device photodetecting mechanism in self-driven mode was discussed using the energy band diagram, where the key role of the engineered back metallic layer in modulating the electric field distribution within the ZnO active region to effectively achieve an asymmetric behavior is emphasized. Therefore, the presented work offers a novel pathway to design high-responsivity self-powered UV-PDs based on a simple All-ZnO structure.
关键词： detectivity,ZnO,Self-powered,low cost,UV photodetectors,RF sputtering
更新于2025-09-16 10:30:52