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High-Performance Enhancement of a GaAs Photodetector Using a Plasmonic Grating
摘要： In this study, we present and establish a gold surface plasmon polariton (SPP) GaAs photodetector that achieves high internal quantum efficiency (IQE). At a wavelength of 600 nm, the IQE with the SPP was 85%, while the IQE without the SPP was 42%, an enhancement of 43%. Also, at a wavelength of 675 nm, the IQE with SPP was 82%, whereas the IQE without SPP was 45%, which constitutes an increase of 37%. Such excellent performance is ascribed to the subwavelength scope of the optical power in the photoconductive-based gold SPP GaAs that provides high IQE. Moreover, the recombination of the SPP in the photodetector provides greater photocurrent and responsivity.
关键词： Surface plasmon polaritons,GaAs photodetector,Plasmonic photodetectors,Light trapping,Plasmonic grating
更新于2025-09-23 15:21:01
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Faceta??Dependent, Fast Response, and Broadband Photodetector Based on Highly Stable Alla??Inorganic CsCu <sub/>2</sub> I <sub/>3</sub> Single Crystal with 1D Electronic Structure
摘要： Low-dimensional metal halides at molecular level, which feature strong quantum confinement effects from intrinsic structure, are emerging as ideal candidates in optoelectronic fields. However, developing stable and nontoxic metal halides still remains a great challenge. Herein, for the first time, high-crystalline and highly stable CsCu2I3 single crystal, which is acquired by a low-cost antisolvent vapor assisted method, is successfully developed to construct high-speed (trise/tdecay = 0.19 ms/14.7 ms) and UV-to-visible broadband (300–700 nm) photodetector, outperforming most reported photodetectors based on individual all-inorganic lead-free metal halides. Intriguingly, facet-dependent photoresponse is observed for CsCu2I3 single crystal, whose morphology consists of {010}, {110}, and {021} crystal planes. The on–off ratio of {010} crystal plane is higher than that of {110} crystal plane, mainly owing to lower dark current. Furthermore, photogenerated electrons are localized in twofold chains created by [CuI4] tetrahedra, leading to relatively small effective mass and fast transport mobility along the 1D transport pathway. Anisotropic carrier transport characteristic is related to stronger confinement and higher electron density for {110} crystal planes. This work not only demonstrates the great potential of CsCu2I3 single crystal in high-performance optoelectronics, but also gives insights into 1D electronic structure associated with fast photoresponse and high anisotropy.
关键词： photodetectors,facet-dependent photoresponse,1D electronic structures,highly stable,fast response
更新于2025-09-23 15:21:01
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Ultrabroadband Photodetectors up to 10.6 ?μm Based on 2D Fe <sub/>3</sub> O <sub/>4</sub> Nanosheets
摘要： The ultrabroadband spectrum detection from ultraviolet (UV) to long-wavelength infrared (LWIR) is promising for diversified optoelectronic applications of imaging, sensing, and communication. However, the current LWIR-detecting devices suffer from low photoresponsivity, high cost, and cryogenic environment. Herein, a high-performance ultrabroadband photodetector is demonstrated with detecting range from UV to LWIR based on air-stable non-layered ultrathin Fe3O4 nanosheets synthesized via a space-confined chemical vapor deposition (CVD) method. Ultrahigh photoresponsivity (R) of 561.2 A W?1, external quantum efficiency (EQE) of 6.6 × 103%, and detectivity (D*) of 7.42 × 108 Jones are achieved at the wavelength of 10.6 μm. The multi-mechanism synergistic effect of photoconductive effect and bolometric effect demonstrates the high sensitivity for light with any light intensities. The outstanding device performance and complementary mixing photo response mechanisms open up new potential applications of nonlayered 2D materials for future infrared optoelectronic devices.
关键词： long-wavelength infrared,photoconductive effect,ultrabroadband photodetectors,bolometric effect,Fe3O4 nanosheets
更新于2025-09-23 15:21:01
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Effects of oxygen pressure on PLD-grown Be and Cd co-substituted ZnO alloy films for ultraviolet photodetectors
摘要： We report on the synthesis of Be and Cd co-substituted ZnO (BexCdyZn1?x?yO) quaternary alloy films on c-plane sapphire substrates by pulsed laser deposition. The results show that all deposited films exhibit single-phase wurtzite structure with a surface roughness less than 1.5 nm. By adjusting the O2 pressure during growth, the optical bandgap of the film is tuned from ~3.3 to ~3.52 eV. At 5 V bias, the BexCdyZn1-x-yO-based photodetector exhibits a remarkable photoresponse in the ultraviolet region with low dark current (~ 16.2 pA) and high detectivity (9.31· 1010 Jones). The rise and decay times of the photodetectors based on BexCdyZn1-x-yO (order of seconds) are clearly faster than those based on pure ZnO (order of minutes). Higher O2 pressure results in better crystalline quality of BexCdyZn1-x-yO film and thus lower dark current and faster photoresponse in the device due to the decrease of oxygen vacancy-related defects under oxygen-rich growth conditions. These results indicate that oxygen pressure plays an important role in the growth of high-quality BexCdyZn1-x-yO alloy films, which have great potential in fabricating high-performance ultraviolet photodetectors.
关键词： Bandgap engineering,BexCdyZn1-x-yO alloys,UV photodetectors,Pulsed laser deposition
更新于2025-09-23 15:21:01
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A Selfa??Powered Higha??Performance UV Photodetector Based on Corea??Shell GaN/MoO <sub/>3a??</sub><i> <sub/>x</sub></i> Nanorod Array Heterojunction
摘要： Self-powered UV photodetectors are highly desirable for applications in space communications and environmental monitoring. However, most self-powered UV photodetectors exhibit unimpressive performance in weak signal detection. Herein, a self-powered UV photodetector based on the core–shell GaN/MoO3–x nanorod array (NRA) heterojunction system is demonstrated. Homogeneous MoO3–x layers are deposited on GaN NRAs by a simple one-step physical vapor deposition method. The photodetector device shows an ultrahigh specific detectivity of 2.7 × 1015 Jones at 355 nm without any power supply. Further analyses reveal a responsivity of 160 A W?1 and a high UV–vis rejection ratio (R355 nm/R400 nm) of 2.0 × 104 under zero bias. The self-powered device also has a fast response speed with a rise/fall time of 73/90 μs. As a result, the self-powered photodetector, featuring ultrahigh detectivity and responsivity along with fast response, exhibits great potential for applications in next-generation UV detection. The core–shell NRA structure heterojunction design provides a valuable direction for realizing nanoscale self-powered UV photodetectors.
关键词： core–shell nanorod arrays,UV photodetectors,ultrahigh detectivity,self-powered devices
更新于2025-09-23 15:21:01
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Solutiona??Processed, Selfa??Powered Broadband CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> Photodetectors Driven by Asymmetric Electrodes
摘要： In general, the fabrication of high-performance, self-powered broadband photodetectors based on traditional semiconducting thin films is tedious and costly. Here, in this paper a high-performance, solution-processed, and self-powered CH3NH3PbI3 (MAPbI3) nanocrystal based photodetector ITO/MAPbI3/Ag is presented, and it shows broadband photoresponse from the visible to the near-infrared wavelength region. The pronounced enhanced performance of the photodetector is due to taking the advantage of the built-in electric field induced by the work function difference of two electrodes. The optimized photodetector shows a responsivity of 4.9 and 1.42 A W?1 with a specific detectivity of 7.6 × 1013 and 1.77 × 1013 Jones under 19 μW cm?2 white light illumination and 26 μW cm?2 808 nm illumination at zero bias, respectively. Therefore, such a concept of simple device geometry and feasible technique will open up a new and promising avenue for the fabrication of self-powered photodetectors and the development of imaging devices.
关键词： ligand-assisted reprecipitation (LARP),CH3NH3PbI3 nanocrystals,broadband photodetectors,photocurrent imaging
更新于2025-09-23 15:21:01
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Higha??Responsivity Mida??Infrared Black Phosphorus Slow Light Waveguide Photodetector
摘要： Black phosphorus (BP) offers unique opportunities for mid-infrared (MIR) waveguide photodetectors due to its narrow direct bandgap and layered lattice structure. Further miniaturization of the photodetector will improve operation speed, signal-to-noise ratio, and internal quantum efficiency. However, it is challenging to maintain high responsivities in miniaturized BP waveguide photodetectors because of reduced light–matter interaction lengths. To address this issue, a method utilizing the slow light effect in photonic crystal waveguides (PhCWGs) is proposed and experimentally demonstrated. A shared-BP photonic system is proposed and utilized to fairly and precisely characterize the slow light enhancement. Close to the band edge around 3.8 μm, the responsivity is enhanced by more than tenfold in the BP photodetector on a 10 μm long PhCWG as compared with the counterpart on a subwavelength grating waveguide. At a 0.5 V bias, the BP PhCWG photodetector achieves a 11.31 A W?1 responsivity and a 0.012 nW Hz?1/2 noise equivalent power. The trap-induced photoconductive gain is validated as both the dominant photoresponse mechanism and the major limiting factor of the response speed. The BP slow light waveguide photodetector is envisioned to realize miniaturized high-performance on-chip MIR systems for widespread applications including environmental monitoring, industrial process control, and medical diagnostics.
关键词： waveguides,slow light,photodetectors,mid-infrared,black phosphorus
更新于2025-09-23 15:21:01
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Hydrogen Terminated Germanene for a Robust Selfa??Powered Flexible Photoelectrochemical Photodetector
摘要： As a rising star in the family of graphene analogues, germanene shows great potential for electronic and optical device applications due to its unique structure and electronic properties. It is revealed that the hydrogen terminated germanene not only maintains a high carrier mobility similar to that of germanene, but also exhibits strong light–matter interaction with a direct band gap, exhibiting great potential for photoelectronics. In this work, few-layer germanane (GeH) nanosheets with controllable thickness are successfully synthesized by a solution-based exfoliation–centrifugation route. Instead of complicated microfabrication techniques, a robust photoelectrochemical (PEC)-type photodetector, which can be extended to flexible device, is developed by simply using the GeH nanosheet film as an active electrode. The device exhibits an outstanding photocurrent density of 2.9 μA cm?2 with zero bias potential, excellent responsivity at around 22 μA W?1 under illumination with intensity ranging from 60 to 140 mW cm?2, as well as short response time (with rise and decay times, tr = 0.24 s and td = 0.74 s). This efficient strategy for a constructing GeH-based PEC-type photodetector suggests a path to promising high-performance, self-powered, flexible photodetectors, and it also paves the way to a practical application of germanene.
关键词： photoelectrochemical photodetectors,2D materials,germanene,germanane
更新于2025-09-23 15:21:01
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Boosting Perovskite Photodetector Performance in NIR Using Plasmonic Bowtie Nanoantenna Arrays
摘要： Triple-cation mixed metal halide perovskites are important optoelectronic materials due to their high photon to electron conversion efficiency, low exciton binding energy, and good thermal stability. However, the perovskites have low photon to electron conversion efficiency in near-infrared (NIR) due to their weak intrinsic absorption at longer wavelength, especially near the band edge and over the bandgap wavelength. A plasmonic functionalized perovskite photodetector (PD) is designed and fabricated in this study, in which the perovskite ((Cs0.06FA0.79MA0.15)Pb(I0.85Br0.15)3) active materials are spin-coated on the surface of Au bowtie nanoantenna (BNA) arrays substrate. Under 785 nm laser illumination, near the bandedge of perovskite, the fabricated BNA-based plasmonic PD exhibits ≈2962% enhancement in the photoresponse over the Si/SiO2-based normal PD. Moreover, the detectivity of the plasmonic PD has a value of 1.5 × 1012 with external quantum efficiency as high as 188.8%, more than 30 times over the normal PD. The strong boosting in the plasmonic PD performance is attributed to the enhanced electric field around BNA arrays through the coupling of localized surface plasmon resonance. The demonstrated BNA-perovskite design can also be used to enhance performance of other optoelectronic devices, and the concept can be extended to other spectral regions with different active materials.
关键词： near infrared,bowtie nanoantenna arrays,perovskite photodetectors,localized surface plasmon resonance
更新于2025-09-23 15:21:01
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Tunable Localized Surface Plasmon Resonance and Broadband Visible Photo-response of Cu Nanoparticles/ZnO Surfaces
摘要： Plasmonic Cu nanoparticles (NP) were successfully deposited on ZnO substrates by atomic layer deposition (ALD) owing to the Volmer–Weber island growth mode. An evolution from Cu NP to continuous Cu films was observed with increasing the number of ALD cycles. Real and imaginary parts of the NP dielectric functions, determined by spectroscopic ellipsometry using an effective medium approach, evidence a localized surface plasmon resonance that can be tuned between the visible and near infrared ranges by controlling the interparticle spacing and size of the NP. The resulting Cu NP/ ZnO device shows an enhanced photo-response under white light illumination with good responsivity values, fast response times and stability under dark/light cycles. The significant photocurrent detected for this device is related with the hot electron generation at the NP surface and injection into the conduction band of the ZnO. The possibility of tuning the plasmon resonance together with the photo-responsivity of the device is promising in many applications related with photo-detection, photonics and photovoltaics.
关键词： atomic layer deposition,hot electrons,copper nanoparticles,photodetectors,localized surface plasmon resonance
更新于2025-09-23 15:21:01