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Analysis of optical injection on red and blue laser diodes for high bit-rate visible light communication
摘要： In this work, self-injection and external-injection in ～450 nm InGaN/GaN blue and ～650 nm InGaP/AlGaInP red diode lasers are investigated. A distinct locking characteristic is observed in the self-injection case with small 19 cm cavity length, demonstrating enhanced ～2.34 and ～2.07 GHz 3-dB bandwidths, corresponding to a factor of ～1.4 and ～1.1 improvement, and reduced ～60 and ～80 pm spectral linewidths, for the blue and the red lasers, respectively. Moreover, this short external cavity self-injection locked system exhibited superior performance by a factor of 1.1–1.3 compared to the long cavity (26 cm) configuration. Conversely, the external optical injection exhibited weak locking signature with improved linewidths by a factor of ～1.6–2.8 and reaching as small as ～70 and ～87 pm for the blue laser, respectively, while almost doubling in the peak powers. Later, on–off keying modulation technique based data transmission rates of up to 3.5 and 4.5 Gb/s are demonstrated on free-running blue and red laser diodes, respectively, employing an in-house laser diode mount based system. Moreover, owing to the bandwidth limitation of the optically injected systems, successful transmission of up to 2 Gb/s is demonstrated with better performance compared to the respective free-running cases, in particular, the external-optically injected system demonstrated more than double improvement in the bit-error-rate.
关键词： Visible light communication,Semiconductor laser diodes,External optical injection,Self-injection locking
更新于2025-11-28 14:23:57
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High Power Laser‐Driven Ce <sup>3+</sup> ‐Doped Yttrium Aluminum Garnet Phosphor Incorporated Sapphire Disc for Outstanding White Light Conversion Efficiency
摘要： A facile synthesis method for the development of Y3 (cid:2) xAl5O12:xCe3t (0.03–0.24) yellow phosphor via an auto-combustion method and fabrication of phosphor-incorporated sapphire disc (PISD) of various dimensions is reported. The photoluminescence (PL) intensity for the optimized concentration of Ce3t-doped yttrium aluminum garnet (YAG) phosphor is recorded at 550 nm wavelength under the excitation wavelength of 445 nm from a high power blue laser diode. The developed PISD exhibits high stability and luminescence. The blue laser diode is a promising candidate to revolutionize the luminous intensity of the white light by several orders of magnitude as compared with the existing blue light-emitting diodes. This emerging technology has an extremely bright future with endless uses of tunable power of the laser that controls the intensity of the emitted white light. Hence, this new approach provides a paradigm shift to produce highly ef?cient white light based on PISD integrated with blue laser diode as compared with the conventional technology. Moreover, such con?gurations allow more styling and packaging ?exibility that reduces the overall size of the fabricated unit and makes it favorable for various lighting applications.
关键词： blue laser diodes,photoluminescence,optical geometry,white light conversion,yellow phosphor
更新于2025-11-21 11:18:25
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Screening of quantum-confined Stark effect in nitride laser diodes and superluminescent diodes
摘要： In the present work we report on the observation of carrier-induced screening of built-in electric fields in (Al,In)GaN laser diodes and superluminescent diodes. We use the emission peak energy as a measure of the quantum-confined Stark effect and its screening by free carriers. For superluminescent diodes we observe a steady increase of screening up to the current density of 10 kA/cm2. This shows that the lasing in nitride laser diodes occurs under high electric fields, far from the flat band conditions.
关键词： nitride laser diodes,electric fields,carrier screening,quantum-confined Stark effect,superluminescent diodes
更新于2025-11-14 15:24:45
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[IEEE 2018 IEEE 6th Workshop on Advances in Information, Electronic and Electrical Engineering (AIEEE) - Vilnius, Lithuania (2018.11.8-2018.11.10)] 2018 IEEE 6th Workshop on Advances in Information, Electronic and Electrical Engineering (AIEEE) - Usage of Signals with a High PAPR Level for Efficient Wireless Power Transfer
摘要： The paper discusses the impact of high-power laser diodes on the conversion efficiency of solar cells in optoelectronics, focusing on the use of specific materials and experimental setups to enhance performance.
关键词： laser diodes,conversion efficiency,materials,optoelectronics,solar cells
更新于2025-09-23 15:22:29
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Performance analysis of colour coded multiple access orthogonal frequency division multiplexing visible light communication system
摘要： Performance analysis of colour coded multiple access (CCMA) orthogonal frequency division multiplexing (OFDM) visible light communication (VLC) System is discussed in this paper. First, characteristics of optical OFDM are studied. Second, CCMA is achieved using three laser diodes (LD): red, green and blue LDs. Finally, OFDM-modulated signals are optically modulated with red, green and blue LDs (RGB LDs). Then these three optical signals are combined together to form white light which illuminates as well as provides high-speed data transmission. The performance of the proposed CCMA OFDM VLC system is studied using constellation diagrams, signals and spectrum comparisons. The system is simulated for the data rate of 10 Gbps.
关键词： red, green blue laser diodes,laser diodes,high data rate,visible light communication,colour coded multiple access,orthogonal frequency division multiplexing
更新于2025-09-23 15:21:01
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Structural and electrical properties of Pd/p-GaN contacts for GaN-based laser diodes
摘要： In this paper, the properties of Pd-based p-contacts on GaN-based laser diodes are discussed. Pd is often the metal of choice for ohmic contacts on p-GaN. However, for Pd/p-GaN ohmic contacts, nanovoids observed at the metal/semiconductor interface can have a negative impact on reliability and also reproducibility. The authors present a thorough analysis of the microstructure of the Pd/p-GaN interface by x-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM). STEM data show that the microvoids at the p-GaN/Pd interface form during rapid thermal annealing. A combination of the following effects is suggested to support the void formation: (1) the differences in thermal expansion coefficients of the materials; (2) excess matrix or impurity atoms in the semiconductor, at the interface, and in the metals, which are released as gases; and (3) the strong antisurfactant effect of Pd on Ga-rich p-GaN surfaces. A slow temperature ramp during contact annealing reduces the formation of voids likely by suppressing the accumulation of gases at the interface. XPS data show that the Ga/N ratio can be reduced by suitable cleaning of the p-GaN surface, which enhances Pd adhesion. As a result, the quality of the contact system is improved by the systematic optimization of the surface cleanliness as well as the annealing parameters, leading to void-free and clean Pd/p-GaN interfaces. The specific contact resistance, extracted from linear transmission line method measurements, is reduced by an order of magnitude to 2 × 10?3 Ω cm2 at 1 mA for the same epitaxial layer stack.
关键词： Pd/p-GaN contacts,STEM,nanovoids,ohmic contacts,rapid thermal annealing,XPS,GaN-based laser diodes
更新于2025-09-23 15:21:01
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Efficient and Higha??Brightness Broad Area Laser Diodes Designed for Higha??Temperature Operation
摘要： Efficient and High-Brightness Broad Area Laser Diodes Designed for High-Temperature Operation. Advantages of semiconductor laser diodes as efficient high-power laser light sources applicable at elevated ambient temperatures. Semiconductor laser diodes, manufactured as single emitters or laser bars, are highly desired light sources for direct material processing as well as optical pumping of fiber and solid-state lasers. Laser diodes feature high optical output power and efficiency, long lifetimes, low maintenance and consequently low cost of ownership. To improve the usability and extend the application spectrum of high-power laser diodes, relaxed cooling requirements – without compromise in laser performance and lifetime – are required. Therefore, great development efforts are made, both in externally and internally funded research projects, to push the maximum permissible operating temperature of such semiconductor laser diodes to higher levels.
关键词： efficiency,semiconductor laser diodes,high-power laser,brightness,high-temperature operation
更新于2025-09-23 15:19:57
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Thermal design for the package of high-power single-emitter laser diodes
摘要： An analytical three-dimensional thermal model is employed to perform the thermal design for the package of high-power single-emitter laser diodes. Thermal design curves for the heat sink and submount are presented in detail, for laser diodes subjected to several convective heat transfer conditions on the bottom of the heat sink. An effective heat spreading angle is proposed to characterize thermal design for the heat sink. A differential heat spreading angle is proposed to clearly manifest heat flow in the packages. Full width and length at 90% energy are introduced to reveal the requirement of submount width and length, respectively. The impact of coefficient of thermal expansion (CTE)-matched sandwiched submount on total heat dissipation is studied. Special discussion is presented for a commercial F-Mount laser diode, and it is found that current heat sink design leads to a 27.4% increase in thermal resistance relative to a free lateral diffusion package.
关键词： Thermal resistance,Heat spreading angle,Submount,Heat sink,Thermal design,High-power laser diodes
更新于2025-09-23 15:19:57
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MOVPE growth of n-GaN cap layer on GaInN/GaN multi-quantum shell LEDs
摘要： Embedded growth of an n-GaN cap layer on multi-quantum shells (MQSs) and nanowires through a tunnel junction (TJ) was investigated for the improvement of current injection to the m-plane of the MQSs. Different growth conditions for an n-GaN cap layer were systematically studied to suppress Mg diffusion and void formation, which are serious problems in this structure. At a high temperature of 900 °C and above, the growth rate on a semi-polar r-plane decreased, and large voids were formed at the bottom part of the nanowires owing to the diffusion of Ga atoms from the r-plane to the m-plane. When the growth temperature decreased to 800 °C, the growth rate on both the m-plane and the r-plane increased, and the size of voids decreased. Simultaneously, Mg diffusion also disappeared because of the low growth temperature of 800 °C. It was found that the growth with an extremely low V/III ratio of 20 at low temperatures increases the lateral growth rate on the m-plane, and void formation is fully suppressed when the MQS height is 700 nm or less.
关键词： B1. Nitrides,A1. Nanostructures,B3. Laser diodes,A3. Metalorganic vapor phase epitaxy
更新于2025-09-23 15:19:57
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[Institution of Engineering and Technology 8th Renewable Power Generation Conference (RPG 2019) - Shanghai, China (24-25 Oct. 2019)] 8th Renewable Power Generation Conference (RPG 2019) - Design of general framework for multifault diagnosis based on photovoltaic grid-connected inverter system
摘要： Visible light communication (VLC) systems have typically operated at data rates below 10 Gb/s and operation at this data rate was shown to be feasible by using laser diodes (LDs), imaging receivers and delay adaptation techniques (DAT imaging LDs-VLC). However, higher data rates, beyond 10 Gb/s, are challenging due to the low signal to noise ratio (SNR) and inter symbol interference (ISI). In this paper, for the first time, to the best of our knowledge, we propose, design, and evaluate a VLC system that employs beam steering (of part of the VLC beam) using adaptive finite vocabulary of holograms in conjunction with an imaging receiver and a DAT to enhance SNR and to mitigate the impact of ISI at high data rates (20 Gb/s). An algorithm was used to estimate the receiver location, so that part of the white light can be directed towards a desired target (receiver) using beam steering to improve SNR. Simulation results of our location estimation algorithm (LEA) indicated that the required time to estimate the position of the VLC receiver is typically within 224 ms in our system and environment. A finite vocabulary of stored holograms is introduced to reduce the computation time required by LEA to identify the best location to steer the beam to the receiver location. The beam steering approach improved the SNR of the fully adaptive VLC system by 15 dB at high data rates (20 Gb/s) over the DAT imaging LDs-VLC system in the worst-case scenario. In addition, we examined our new proposed system in a very harsh environment with mobility. The results showed that our proposed VLC system has strong robustness against shadowing, signal blockage, and mobility.
关键词： delay adaptation,SNR,location estimation,imaging receiver,Beam steering,finite vocabulary of holograms,ISI,laser diodes
更新于2025-09-23 15:19:57