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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Depth profile of ZnAl<inf>2</inf> O<inf>4</inf> layer on sapphire substrate by cathodoluminescence
摘要： ZnAl2O4 for ultraviolet emitting phosphor prepared by deposition of ZnO on c-sapphire substrate and thermal diffusion process. The deflections of Zn and Al atoms in the films were confirmed by cathodo-luminescence properties. The CL intensity of ZnAl2O4 was not saturated from the film annealed for 100 hours, however, the saturation of UV emission was observed under anode voltage of 8 kV in the film annealed for 200 hours. It is thought that the thickness of ZnAl2O4 film became thinner by longer annealing at high temperature because of Zn re-evaporation. From cross-sectional FE-SEM observation, it was confirmed that the correct thickness and atomic distributions in the film. Since the ZnAl2O4 film thickness of the sample annealed for 100 hours was about 1 μm by FE-SEM, it was suitable the penetration depth of the electron into ZnAl2O4 layer
关键词： Sapphire substrate,Thermal distribution,ZnAl2O4,Ultra-Violet emission
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Structure and cathodoluminescent properties of ultraviolet emitting Zn(Al<inf>1-x</inf> Ga<inf>x</inf>)<inf>2</inf> O<inf>4</inf> alloy phosphor
摘要： The goal is to control the band gap by replacing the Al site of zinc aluminate having a spinel structure with Ga, and to control the emission wavelength, and aim for application as a light source in sterilization, skin treatment and the like. Zn(Al1-xGax)2O4 phosphor was prepared by a solid phase synthesis method. A plurality of samples with different Al/Ga ratio were prepared, and their crystal structures and luminescent properties were evaluated. In X-ray diffraction, formation of a single phase was confirmed in the sample fired at 1300 oC. It was confirmed that the diffraction peak shifted to the lower angle side by increasing the Ga ratio. In the cathode luminescence method, it was confirmed that ultraviolet emission of ZnAl2O4 was confirmed at about 250 nm, and it was confirmed that the emission wavelength shifted to the long wavelength side by increasing the Ga ratio. It is suggested that substituting Ga for the Al site of ZnAl2O4 is useful for shifting the emission wavelength although the emission intensity is unstable.
关键词： Cathodoluminescence,Zn(Al,Ga)2O4,Alloy phosphor,Ultra-Violet emission
更新于2025-09-23 15:21:21