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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • Dual Material Gate (DMG)
  • Vertical TFET
  • Single Material Gate(SMG)
  • Band-to-band tunneling (BTBT)
应用领域
  • Electronic Science and Technology
机构单位
  • National Institute of Technology Silchar
154 条数据
?? 中文（中国） ▾

  • Graphene quantum dot vertical cavity surface emitting lasers

    摘要： Nonzero-bandgap graphene quantum dots (GQDs) are novel optical gain materials promising for solution-processed light sources with high cost efficiency and device performance. To date, there have only been a few reports on the realization of GQDs-based lasers. Herein, we demonstrate for the first time room-temperature lasing emission with green gamut from GQDs in a vertical optical cavity composed of Ta2O5/SiO2 dielectric distributed Bragg reflectors (DBRs). The lasing is enabled by the unique design of the DBR which not only provides a wide stopband spectrally overlapping with the emission of the GQDs but also allows high transmittance of optical excitation in the UV-light region. This demonstration is a clear evidence of the use of GQDs as optical gain materials and represents an important step forward toward their potential applications in wide-gamut laser displays and projectors.

    关键词： Vertical Cavity Surface Emitting Laser,Graphene Quantum Dots,Green Gap,Microwave-Assisted Hydrothermal Method,Distributed Bragg Reflectors (DBRs)

    更新于2025-09-11 14:15:04

  • [IEEE IGARSS 2018 - 2018 IEEE International Geoscience and Remote Sensing Symposium - Valencia, Spain (2018.7.22-2018.7.27)] IGARSS 2018 - 2018 IEEE International Geoscience and Remote Sensing Symposium - Afrisar-Tropisar: Forest Biomass Retrieval by P-Band Sar Tomography

    摘要： The objective of this paper is to provide a better understanding of tomographic capabilities to estimate aboveground biomass (AGB) in dense forested areas at P-band. The analysis is carried out on airborne data acquired over sites in French Guyana and in Gabon during the ESA campaigns TropiSAR and AfriSAR 2015, respectively. Over both sites, P-band to-mography allows us to retrieve the vertical structure of the forest, to better characterize the ground and/or volume scattering mechanisms and to provide a unique solution for the AGB retrieval over the full range of biomass. The relationship between AGB and tomography data was found to be highly similar for forests across continents and sites: Paracou (French Guiana), Lope, Rabi and Mondah (Gabon). The developed metrics derived from the tomographic data have been found highly correlated to reference in situ AGB estimates (R2=0.85) and the root mean square error was 16% (for AGB ranging from 0 to 500 t/ha). These results have strong implications for the tomographic phase of the BIOMASS spaceborne mission.

    关键词： BIOMASS mission,AfriSAR,Above Ground Biomass,P-band SAR tomography,forest,TropiSAR,forest vertical structure,Synthetic Aperture Radar

    更新于2025-09-10 09:29:36

  • Vertical GaN n-channel MISFETs on ammonothermal GaN substrate: Temperature dependent dynamic switching characteristics

    摘要： Switching of GaN-based vertical-trench gate MISFET on ammonothermal n-type GaN substrate are studied as a function of temperature. Pulsed ON-state IV characterization revealed three unexpected independent effects. First, drain current increases with temperature, although electron mobility decreases with temperature. Second, drain current decreases with pulse length, which cannot be explained by heating. Third, dynamic RON increases with OFF-state drain bias, which usually is considered as an issue of lateral GaN HFETs only. The drain current temperature dependence is most likely dominated by the low electron mobility in the inversion layer beneath the gate. The field effect channel mobility is estimated as < 10 cm2/V s and can thus be considered as trap limited and thermally activated, RON decreases from 133 Ω mm at 20 °C to 62 Ω mm at 110 °C. Longer ON-state pulses lead to negative charging of the ALD-Al2O3 gate oxide and shift the threshold voltage (DC-Vth ~8 V) positively. With the maximum applicable Vgs = 10 V, the drain current is not saturated yet and Ids thus drops by a factor 2 when increasing the ON-state pulse width from 0.2 μs to 20 μs due to the Vth-shift. The observed 10-times dynamic RON increase with OFF-state drain bias up to 30 V can be related to possible charging mechanism in the gate oxide as well. Activation energies for different OFF-state stress voltage are ranged linear between 0.08 eV and 0.26 eV for drain bias stress of Vds = 0 V and 30 V respectively.

    关键词： Vertical GaN MISFET,Dynamic switching,Ammonothermal GaN substrate

    更新于2025-09-10 09:29:36

  • Vertically-aligned lead-free BCTZY nanofibers with enhanced electrical properties for flexible piezoelectric nanogenerators

    摘要： Flexible lead-free (Ba0.85Ca0.15)(Ti0.9Zr0.1)O3-0.2 mol%Y nano?bers (BCTZY NFs) were synthesized by electrospinning and their corresponding nanogenerators (NGs) with vertical alignments were fabricated. The low-temperature sintering properties of BCTZY NFs were investigated, to optimize their synthesis path and minimize the thermal energy consumption during the sintering process. The continuity, ?exibility, and stability of the BCTZ-based NFs were improved by adding Y3+. Moreover, the temperature-evolved Raman spectra displayed a high Curie temperature of 280 °C for BCTZY NFs, which was far higher than that of about 90 °C for BCTZ-based ceramic bulks, owing to the discontinuous physical property of NFs. The dielectric, ferroelectric, and piezoelectric properties of the vertically aligned BCTZY NFs/PDMS were estimated and compared with those of BCTZ NFs/PDMS composites, to verify the advantages of vertical alignments and the donor doping e?ect of Y3+. Vertically aligned BCTZY NF-based NGs showed an average VOC of 3.0 V and ISC of 85 nA by ?nger tapping, suggesting their potential applications in tiny energy harvesting.

    关键词： Electrospinning,Lead-free BCTZY nano?bers,Vertical alignment,Piezoelectric nanogenerators

    更新于2025-09-10 09:29:36

  • Solid Deep Ultraviolet Diffracting Inverse Opal Photonic Crystals

    摘要： We fabricated the first solid, mechanically robust inverse opal photonic crystals that diffract in the deep ultraviolet (UV) spectral region. These photonic crystals are fabricated by self-assembling <140 nm diameter monodisperse polystyrene nanoparticles into face centered cubic 3D close-packed structures on fused silica microscope slides in the presence of tetraethyl orthosilicate via a vertical deposition method. Tetraethyl orthosilicate condenses in the nanoparticle interstices during self-assembly, immobilizing the polystyrene nanoparticles in a SiO2 matrix. Removal of the polystyrene nanoparticles using Piranha solution yields a stable SiO2 inverse opal structure that Bragg diffracts in the deep UV at <245 nm. We measured the UV-Vis transmission, diffraction of a collimated deep UV white light source, and diffraction of 229 nm laser light in order to characterize the deep UV optical performance of these photonic crystals. We measured a maximum light attenuation of ~98% at the Bragg condition, calculated a photonic crystal thickness of ~33 layers, and calculated a diffraction spectral bandwidth of 16.8 nm full-width at half maximum. The mechanical robustness, photochemical durability, and shelf-life of the deep UV diffracting photonic crystals demonstrated in this work enables their development for use as deep UV optical devices. We conclude that additional optimization of the self-assembly and vertical deposition conditions is required to improve the thickness uniformity and ordering of these photonic crystals to increase their diffraction efficiency and to decrease their diffraction bandwidth.

    关键词： photonic crystal,Ultraviolet diffraction,vertical deposition,convective self-assembly,inverse opal,nanoparticles

    更新于2025-09-10 09:29:36

  • [IEEE 2018 IEEE International Conference on Computational Electromagnetics (ICCEM) - Chengdu, China (2018.3.26-2018.3.28)] 2018 IEEE International Conference on Computational Electromagnetics (ICCEM) - A Vertically-Polarized Ultra-Wideband, Low-Profile and Folded Half Vivaldi Antenna

    摘要： A vertically-polarized, ultra-wideband (UWB), low-profile Vivaldi antenna is presented in this paper. Only half of the Vivaldi is placed perpendicularly to the ground plane to achieve vertical polarization. The upper part of the antenna is folded into a right angle to achieve a low-profile. The rectangular slotlines are used to improve VSWR and enhance the gain at the end-fire orientation in the operating frequency band, and a 50? coaxial probe connects directly with the end of taper slot for feeding purpose. The total sizes are 100 (length) × 50 (width) × 16 (height) mm3. Simulated results show that the designed antenna exhibits a bandwidth from 3.2 to 24 GHz (7.5:1) for VSWR<2.2, and stable radiation patterns in 3 ~ 16 GHz.

    关键词： vivaldi antenna,ultra-wideband,vertical polarization,rectangular slotline

    更新于2025-09-10 09:29:36

  • A Wearable Second Skin-Like Multifunctional Supercapacitor with Vertical Gold Nanowires and Electrochromic Polyaniline

    摘要： A Wearable Second Skin-Like Multifunctional Supercapacitor with Vertical Gold Nanowires and Electrochromic Polyaniline. An ideal wearable/implantable bio-diagnostics can be powered by second skin-like energy devices in that they offer advantages such as conformal attachment/integration, lightweightness, and moduli-matching properties. Past several years have witnessed encouraging progresses in soft stretchable supercapacitors by various material combinations and design strategies; however, it remains nontrivial to achieve highly flexible high-performance supercapacitors in a skin-thin layout yet with multifunctionality. Here, such a second skin-like electrochromic supercapacitor is demonstrated using self-assembled vertical gold nanowires (v-AuNWs) and electrodeposited polyaniline (PANI). The v-AuNW film is highly conductive yet offers great flexibility and deformability, while PANI plays a dual role in enhancing capacitance and as charge/discharge-level indicator. The assembled supercapacitors offer superior skin-conformability and could achieve an areal specific capacitance of 11.76 mF cm?2 (scan rate of 10 mV s?1) with high durability. A second skin-like wearable tattoo energy device can be designed with negligible performance deterioration under multiple hand movements and skin deformations.

    关键词： vertical gold nanowires,skin-conformable,multifunctional,electrochromic

    更新于2025-09-10 09:29:36

  • Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width

    摘要： GaN-based vertical transistors have demonstrated its excellent properties for high-power and high-frequency electronic devices. This work introduces a GaN-based static induction transistor (SIT) which is another form of vertical GaN transistors without requiring any p-type GaN and gate dielectrics for its operation. Processing strategy to generate the GaN SIT with a sub-micrometer fin width involves photoresist (PR)-assisted planarization with an understanding of dry etch parameters for the planar PR surface. The efficacy of this process is demonstrated by the device’s triode-like output characteristics with high current density (0.65 kA cm?2) and low ON resistance (1.48 mΩ cm2) at 1 V of drain voltage. In addition, the electrical properties such as current density and modulation are examined depending on the fin width of GaN SIT. The result reveals that the size reduction in the GaN SIT utilizing the sub-micrometer fin as a channel could increase the current modulation, but it could decrease the current density because of the raised potential minima due to the depletion region overlap. It is believed that the GaN SIT demonstrating high blocking voltage and low ON resistance would present a very promising class of transistor for next-generation high-power and high-frequency electronics.

    关键词： Schottky junction,vertical channel,sub-micrometer dimension,GaN,static induction transistors

    更新于2025-09-10 09:29:36

  • [IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris, France (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Evaluation of JIG Calibration Method for Absorbing Clamp Calibration According to CISPR 16-1-3

    摘要： This paper describes JIG method calibration technique for absorbing clamp calibration according to the standard CISPR 16-1-3. Calibration geometrical construction, calibration configuration and its influence to the Clamp Factor (CF) calibration is described.

    关键词： vertical flange,JIG calibration method,CISPR 16-1-3,Clamp Factor (CF),Secondary absorbing device (SAD)

    更新于2025-09-10 09:29:36

  • 39.4: <i>Invited Paper:</i> Self-alignment of liquid crystal for multi-domain liquid-crystal display

    摘要： By introducing photopolymerizable amphiphile organic monomers(PAOM) into nematic liquid crystals (NLC) with controlled amount of UV-curable reactive mesogen (RM), a multi-domain vertical-alignment LC device was successfully demonstrated. The device, possessing a vertically aligned LC director in four different azimuthal directions, exhibited a fast response time, wide-viewing-angle characteristics and high voltage holding ratio(VHR), in the absence of conventional polyimides vertical-alignment layers. The formation of automatic and robust vertical alignment layer was analyzed by using scanning electron microscopy(SEM).

    关键词： Amphiphile organic monomers,vertical-alignment layers

    更新于2025-09-10 09:29:36