[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Low Cost GaSb N on P ThermoPhotoVoltaic (TPV) Cells

摘要： Future wireless networks will exploit a variety of wireless technologies to provide ubiquities connectivity to mobile devices in the form of cellular, Wireless Local Area Networks, and femtocells. Inevitably, future wireless networks will be diverse in nature, employing a number of different techniques to associate the hand held devices that are deemed to use the network. Furthermore, mobile users seek for seamless connectivity, while roaming in the midst of different networks. This requires the mobile device and the wireless networks be capable of performing a vertical handover, when the mobile nodes find themselves in the vicinity of a foreign network. Regardless of the technological challenges in terms of security, data integrity and mutual authentication between participating agents remain a significant concern in heterogeneous networks. This paper explores these concerns by examining a number of solutions proposed for vertical handover, and identifies EAP Reauthentication Protocol (ERP) as a technology-independent flexible mechanism for a vertical handover. EAP-ERP satisfies the mobility requirements of future hand held devices while promising the desired security futures. In view of thoroughly exploring EAP-ERP, Casper/FDR has been used in this paper to analyze its security properties under various conditions. The results indicate that despite the initial perception, EAP-ERP lacks mutual authentication between agents, while the integrity of keying material is adequately protected.

[IEEE 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Grenoble, France (2019.4.1-2019.4.3)] 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Nanowire & Nanosheet FETs for Ultra-Scaled, High-Density Logic and Memory Applications

摘要： We report on vertically stacked lateral nanowires (NW)/nanosheets (NS) gate-all-around (GAA) FET devices as promising candidates to obtain a better power-performance metric for logic applications for advanced sub-5nm technology nodes, in comparison to finFETs. In addition, vertical NW/NS GAA FETs appear particularly attractive for enabling highly dense memory cells such as SRAMs (with improved read and write stability), and as the selector devices for ultra-scaled MRAMs with lower energy consumption values. These cells can be manufactured by a cost-effective, co-integration scheme with a finFET or NW/NS FET high-performance logic platform for increased on-chip memory content.

P‐9.13: A Vertical Type Photodetector Based on All‐inorganic Perovskite Quantum Dots

摘要： In this work, the vertical type photodetector (PD) based on CsPbBr3 QDs with a structure of indium tin oxide (ITO)/ zinc oxide (ZnO)/ CsPbBr3 QDs/ Au is reported. In this device, the ZnO layer acts as a buffer layer, which can improve the uniformity and surface coverage of the CsPbBr3 QDs film to eliminate the current-leakage. As a result, the on/ off ratio, D* and rise time (decay time) of CsPbBr3/ZnO hybrid PD is measured to be 2.2x104, 1.06x1011 and 62ms (82ms) under low reverse bias. This work inspires the development of vertical type photodetectors based on the all-inorganic perovskite quantum dots.

Corrigendum: Impact of Polymer Backbone Fluorination on the Charge Generation/Recombination Patterns and Vertical Phase Segregation in Bulk Heterojunction Organic Solar Cells

Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

摘要： The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, ?ow rate, and chamber pressure, etc. In particular, the microtrench at the bottom corner of the mesa sidewall was eliminated by a combination of ICP dry etching and tetramethylammonium hydroxide (TMAH) wet treatment. Finally, a highly anisotropic pro?le of the mesa sidewall was realized by using the optimized etch recipe, and a quasi-vertical GaN SBD was demonstrated, achieving a low reverse current density of 10?8 A/cm2 at ?10 V.

[IEEE 2018 3rd International Conference on Inventive Computation Technologies (ICICT) - Coimbatore, India (2018.11.15-2018.11.16)] 2018 3rd International Conference on Inventive Computation Technologies (ICICT) - Finite element mesh generation technique for numerical computation of cutoff wave numbers in rectangular and L -shaped waveguide

摘要： Future wireless networks will exploit a variety of wireless technologies to provide ubiquities connectivity to mobile devices in the form of cellular, Wireless Local Area Networks, and femtocells. Inevitably, future wireless networks will be diverse in nature, employing a number of different techniques to associate the hand held devices that are deemed to use the network. Furthermore, mobile users seek for seamless connectivity, while roaming in the midst of different networks. This requires the mobile device and the wireless networks be capable of performing a vertical handover, when the mobile nodes find themselves in the vicinity of a foreign network. Regardless of the technological challenges in terms of security, data integrity and mutual authentication between participating agents remain a significant concern in heterogeneous networks. This paper explores these concerns by examining a number of solutions proposed for vertical handover, and identifies EAP Reauthentication Protocol (ERP) as a technology-independent flexible mechanism for a vertical handover. EAP-ERP satisfies the mobility requirements of future hand held devices while promising the desired security futures. In view of thoroughly exploring EAP-ERP, Casper/FDR has been used in this paper to analyze its security properties under various conditions. The results indicate that despite the initial perception, EAP-ERP lacks mutual authentication between agents, while the integrity of keying material is adequately protected.

[IEEE 2019 16th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON) - Pattaya, Chonburi, Thailand (2019.7.10-2019.7.13)] 2019 16th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON) - Antenna Gain Self-calibration for Double Ridged Guide Horn Antenna using Bi-directional Optical Fiber Link Transceiver

摘要： This letter reports a GaN vertical trench metal–oxide–semiconductor field-effect transistor (MOSFET) with normally-off operation. Selective area regrowth of n+-GaN source layer was performed to avoid plasma etch damage to the p-GaN body contact region. A metal-organic-chemical-vapor-deposition (MOCVD) grown AlN/SiN dielectric stack was employed as the gate “oxide”. This unique process yielded a 0.5-mm2-active-area transistor with threshold voltage of 4.8 V, blocking voltage of 600 V at gate bias of 0 V, and on-resistance of 1.7 Ω at gate bias of 10 V.

Caustic and Weakly Diverging Beams in Horizontally Inhomogeneous Oceanic Waveguides

摘要： Using approximate analytical calculations based on the WKB and adiabatic approximations for the mode representation of the field, as well as numerical simulation based on the theory of adiabatic modes, geometric acoustic approximation, and the parabolic equation method, the patterns of the formation and propagation of caustic and weakly diverging acoustic beams in a horizontally inhomogeneous refractive oceanic waveguide are studied. The horizontal distance regions are determined at which the dependences of the acoustic field intensity on the horizontal distance typical of caustic and weakly diverging beams are retained. The study considers the processes involved in reformation of caustic and weakly diverging beams in an oceanic waveguide with increasing water layer depth and constant sound speed profile, which near the source characterized an underwater sound channel open toward the bottom. The conditions are formulated for an effectively matched transition of shallow-water waveguide modes refracted in the thermocline and interacting with the bottom to purely refracted modes of the underwater sound channel in a relatively deep water part of the oceanic waveguide.

[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Fiber Optic Seismic Monitoring System for Highway Rock Slope

摘要： for the stability is essential Seismic monitoring assessment of highway rock slope. This paper presents the design and implementation of a precision fiber optic seismic monitoring system for highway rock slope using fiber Bragg grating geophone and vertical-cavity surface-emitting laser-based interrogator. The overall composition, sensor design and interrogation scheme are introduced in detail. The field test results show that this system has great potential for stability monitoring of highway rock slope.

[IEEE 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) - Las Vegas, NV, USA (2019.5.28-2019.5.31)] 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) - Vertical Laser Assisted Bonding for Advanced "3.5D" Chip Packaging

摘要： In this work the processes of laser assisted bonding (LAB) is compared to thermal compression bonding (TCB). Their respective advantages and disadvantages regarding the assembly of flip chip stacks are compared. It is found, that the LAB allows for faster processing, negligible compression force and creates less internal stress in the chip stack. The concept of “3.5D” stacking is introduced. This new concept allows for the vertical bonding of chips/semiconductors to the sides of a chip stack. The vertically bonded parts can be used to contact the layers, which eliminates the individual necessity for through silicon vias (TSVs).