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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Industrial 0.15-μm AlGaN/GaN on SiC Technology for Applications up to Ka Band
摘要： This paper describes the main characteristics of the new GaN-on-SiC technology in development at UMS. This technology is based on a 0.15-μm gate-length and it is in the phase of industrial qualification for a target release by the end of the year. The results of two out of four demonstrators already successfully designed on the new technology are also reported: a 29.5-36 GHz 9W HPA and a 15.5-18.5 GHz 20W HPA.
关键词： Ku Band,AlGaN/GaN HEMT,Ka Band
更新于2025-09-04 15:30:14
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[IEEE 2018 3rd International Conference for Convergence in Technology (I2CT) - Pune (2018.4.6-2018.4.8)] 2018 3rd International Conference for Convergence in Technology (I2CT) - High Frequency Analysis of GaAsP /InSb Hetero-Junction Double Gate Tunnel Field Effect Transistor
摘要： In this paper, we have presented a detailed study on a new Double Gate Tunnel Field-Effect Transistor for suppression of ambipolar behavior and improved high-frequency response. The proposed device Hetero Gate Oxide Hetero-Junction Dual Gate Tunnel Field Effect Transistor (HGO-HJ-DG-TFET) is based on heterojunction material and gate dielectric engineering. Heterojunction provides increment in the drain current (Ids) by decreasing the tunneling width at source-channel (S/C) junction and increase the width at drain-channel (D/C) junction. Further, implementation of high-k dielectric at S/C region helps to increases the electric field thus providing better controllability. Therefore, the proposed device gets better in terms of subthreshold slope, drain current, resistant to parasitic capacitance and high frequency parameters. The reliability of device in high-frequency applications is also studied with optimization of channel length and drain voltage. Hence, the overall performance of the HGO-HJ-DG-TFET is examined using Silvaco TCAD for better efficiency of the device.
关键词： Gate-to-drain capacitance,Band to band tunneling,Hetero junction,Hetero gate oxide
更新于2025-09-04 15:30:14
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A DISTINCTIVE METHOD OF ELIMINATING OUT-BAND INSTABILITY IN CASCADED ACTIVE DEVICE SYSTEM BASED ON NARROW-BAND ATTENUATION
摘要： A distinctive connection method in cascaded RF/MW active device system achieving both stability and low gain loss is presented. Unlike traditional methods (isolator and attenuator), the proposed solution introduces an appropriate length of transmission line to change the input impedance at the out-band instable frequency point and uses a narrow-band termination to absorb the instable power without deteriorating in-band signal. Moreover, the reason that instability often occurs in the cascaded system is analysed with S-parameters, and it turns out to be a kind of out-band instability. The solution is veri?ed by an adjustable circuit example whose insertion loss is below 0.3 dB.
关键词： stability,RF/MW active devices,narrow-band attenuation,out-band instability,cascaded system
更新于2025-09-04 15:30:14
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Group 10 metal–thiocatecholate capped magnesium phthalocyanines – coupling chromophore and electron donor/acceptor entities and its impact on sulfur induced red-shifts
摘要： A new and facile method of generating thiolate groups at the phthalocyanine (Pc) β-position is presented as well the unique properties that these groups confer on the Pc ligand upon coordination of group 10 metals Ni, Pd and Pt(dppe) or SnMe3. In particular, the Q-band is shifted to almost 800 nm for all group 10 metals used, and the complexes show panchromatic absorption owing to new absorbance bands that appear between 400 and 650 nm. Enhanced intersystem-crossing for all transition metal co-ordinated Mg(Pc) complexes was demonstrated by the moderate to very high singlet oxygen quantum yields of 0.36, 0.76 and 0.91 for the Ni, Pd and Pt coordinating complexes, respectively, which show that the heavy metals have direct influence on the Pc π-system and inter-system-crossing (ISC). This was further confirmed by MO calculations, which show mixing of metal and ligand orbitals, as well as suggest that the Q-band transition has both π → π* and ligand-to-metal charge transfer characteristics. Furthermore, the origin of the Q-band red-shift was shown to be due to greater destabilization of the HOMO compared to LUMO/LUMO+1, thus decreasing the HOMO–LUMO band gap.
关键词： thiolate groups,intersystem-crossing,phthalocyanine,MO calculations,HOMO–LUMO band gap,panchromatic absorption,singlet oxygen quantum yields,group 10 metals,Q-band
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Melbourne, Australia (2018.8.15-2018.8.17)] 2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - A Fully-Integrated <tex>$S$</tex>-Band Differential LNA in <tex>$0.15-\mu \mathrm{m}$</tex> GaAs pHEMT for Radio Astronomical Receiver
摘要： A fully-integrated S-band high-gain MMIC low noise amplifier (LNA) with differential input and single-ended output is presented and implemented in 0.15-μm GaAs pHEMT for Square Kilometre Array (SKA) astronomical receiver. The low-loss input noise matching network is designed, and the fully on-chip LC balun is introduced between the first stage LNA core and the second stage amplifier to improve overall system noise figure. The 1-dB bandwidth of the LNA covers from 1.5 to 3.7 GHz. The measurement results demonstrate 31.8-dB gain, average in-band noise figure of 0.73 dB with DC power con- sumption of 25 mW. The chip area is 2.5 x 2 mm2. Also, a noise figure measurement method for the 3-port differential-input-to- single-ended-output amplifiers is introduced in this paper.
关键词： differential low noise amplifier,GaAs pHEMT,Square Kilometre Array (SKA),fully- integrated,balun,broadband,S-band
更新于2025-09-04 15:30:14
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X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power
摘要： High quality AlGaN/AlN/GaN high electron mobility transistors (HEMTs) were grown on 3-inch diameter semi-insulating 6H-SiC substrates by metal organic chemical vapor deposition. The GaN HEMT wafer exhibited an average sheet resistance of 342.2 Ω/□ with a uniformity of 1.5% by introducing both the high mobility GaN channel layer and AlN interlayer. At room temperature a Hall mobility of 2412.06 cm2/Vs and a two-dimensional electron gas density of 7.654 × 1012 cm?2 are achieved. Atomic force microscopy showed a smooth surface and a root-mean-square roughness of 0.227 nm for 10 × 10 μm2 scan area. Direct current measurements revealed a maximum drain current density of 1.31 A/mm and an extrinsic transconductance of 450 mS/mm. The current gain cutoff frequency and maximum frequency of oscillation of the device were measured to be 31 GHz and 60 GHz, respectively. Eight-cell internally-matched GaN HEMT device exhibited a maximum continuous-wave output power of 110.9 W at 8 GHz, with a power-added efficiency of 33.7% and a power gain of 6.35 dB.
关键词： X-Band,Power Amplifier,GaN HEMT
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE Radio and Antenna Days of the Indian Ocean (RADIO) - Mauritius (2018.10.15-2018.10.18)] 2018 IEEE Radio and Antenna Days of the Indian Ocean (RADIO) - Circular SRR Shaped UWB Antenna with WiMAX Band Notch Characteristics
摘要： A Compact ultra-wideband microstrip patch antenna with single notch characteristics is proposed in this paper. The proposed antenna comprises of a split ring resonator (SRR) and an open loop rectangular resonator (OLRR). The split ring resonator in this paper plays a dual role, it acts as a radiating patch and also as a band rejecter to eliminate the entire worldwide interoperability for microwave access (WiMAX) covers 3.3 GHz – 3.6 GHz band. OLRR is used for the suppression of the harmonic frequency band notch. The compact size of the antenna is 36 × 30 mm2.
关键词： Split Ring Resonator (SRR),WiMAX band notch,Open Loop Rectangular Resonator (OLRR),Ultra-wideband (UWB)
更新于2025-09-04 15:30:14
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Cloud information content analysis of multi-angular measurements in the oxygen A-band: application to 3MI and MSPI
摘要： Information content analyses on cloud top altitude (CTOP) and geometrical thickness (CGT) from multi-angular A-band measurements in the case of monolayer homogeneous clouds are conducted. In the framework of future multi-angular radiometer development, we compared the potential performances of the 3MI (Multi-viewing, Multi-channel and Multi-polarization Imaging) instrument developed by EUMETSAT, which is an extension of POLDER/PARASOL instrument and MSPI (Multiangle SpectroPolarimetric Imager) developed by NASA’s Jet Propulsion Laboratory. Quantitative information content estimates were realized for thin, moderately opaque and opaque clouds for different surface albedo and viewing geometry configurations. Analyses show that retrieval of CTOP is possible with a high accuracy in most of the cases investigated. Retrieval of CGT is also possible for optically thick clouds above a black surface, at least when CGT > 1–2 km and for thin clouds for CGT > 2–3 km. However, for intermediate optical thicknesses (COT (cid:39) 4), we show that the retrieval of CGT is not simultaneously possible with CTOP. A comparison between 3MI and MSPI shows a higher information content for MSPI’s measurements, traceable to a thinner filter inside the oxygen A-band, yielding higher signal-to-noise ratio for absorption estimation. Cases of cloud scenes above bright surfaces are more complex but it is shown that the retrieval of CTOP remains possible in almost all situations while the information content on CGT appears to be insufficient in many cases, particularly for COT < 4 and CGT < 2–3 km.
关键词： multi-angular measurements,cloud geometrical thickness,oxygen A-band,MSPI,3MI,cloud top altitude
更新于2025-09-04 15:30:14
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Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors
摘要： In this work, efforts were made to prepare a thermostable die-attach structure which includes stable sintered microporous Ag and multi-layer surface metallization. Silicon carbide particles (SiCp) were added into the Ag sinter joining paste to improve the high-temperature reliability of the sintered Ag joints. The use of SiCp in the bonding structures prevented the morphological evolution of the microporous structure and maintained a stable structure after high temperature storage (HTS) tests, which reduces the risk of void formation and metallization dewetting. In addition to the Ag paste, on the side of direct bonded copper (DBC) substrates, the thermal reliability of various surface metallizations such as Ni, Ti, and Pt were also evaluated by cross-section morphology and on-resistance tests. The results indicated that Ti and Pt diffusion barrier layers played a key role in preventing interfacial degradations between sintered Ag and Cu at high temperatures. At the same time, a Ni barrier layer showed a relatively weak barrier effect due to the generation of a thin Ni oxide layer at the interface with a Ag plating layer. The changes of on-resistance indicated that Pt metallization has relatively better electrical properties compared to that of Ti and Ni. Ag metallization, which lacks barrier capability, showed severe growth in an oxide layer between Ag and Cu, however, the on-resistance showed fewer changes.
关键词： wide band-gap semiconductor,die attachment,sinter joining
更新于2025-09-04 15:30:14
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Enhancement of a Nanoscale Novel Esaki Tunneling Diode Source TFET (ETDS-TFET) for Low-Voltage Operations
摘要： This paper presents a novel nanoscale tunnel FET consisting of an Esaki tunneling diode in the source region. A unique part of the source region is replaced by a heavily doped N-type silicon material establishing a tunneling diode inside the source region. Also, the gate metal is deliberately extended into the source region in order to more couple the created tunneling diode inside the source region. In the result of this new configuration, the band energy bending occurs inside the source region and also the potential barrier will be modified in the channel region thus increasing the ratio of ION to IOFF (ION/IOFF) and reducing the leakage current and ambipolar current for the proposed structure. The proposed structure has been compared with the conventional TFET and PNPN-TFET structure in terms of the ION/IOFF, Leakage current, ambipolar current, drain-source conductance, short channel effects, source-drain capacitance and minimum noise figure showing a performance superiority with respect to other structures under the study.
关键词： Tunnel FET,Band energy,Potential barrier,Esaki tunneling diode
更新于2025-09-04 15:30:14