Effect of Sputtering Technique and Properties of TiO2 Doped with SnO2 Thin Films

摘要： Doped oxide materials of 90% of TiO2 was doped with 10% of SnO2 that target has been deposited at a substrate temperature of 250°C for 1 hour by using DC Sputtering technique. The as synthesized target was TiO2-SnO2 was used to deposit on the glass substrates. The deposited oxide thin film was characterized for their structural, surface morphological, electrical and optical properties. X-ray diffraction is used for studying the nature and structure, scanning electron, atomic force microscopy and transmission electron microscopy are used to identify the surface morphology of the prepared films. The Van der Pauw technique is employed to measure electrical resistivity and Hall mobility of the film. Wide varieties of methods are available for measuring thin film thicknesses. Stylus profilometry will be helpful to find the thickness of the film, structural studies by X-ray, and micros structural analysis of the film.