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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Investigations on electrical properties and correlations to electron and X-ray energies of pyroelectric LiTaO<inf>3</inf> and LiNbO<inf>3</inf>
摘要： The electrical properties of pyroelectric Lithium Tantalate (LiTaO3) and Lithium Niobate (LiNbO3) were investigated and compared to accessible X-ray energies by using the pyroelectric effect to generate X-rays. The capacitances of different crystals of varying sizes were measured and the resulting permittivities were calculated. A vacuum setup enabled a correlation to the maximum X-ray energies at a variable pressure. The presented results provide an overview of fundamental material properties and the effect on the generated difference of potential.
关键词： Lithium Niobate,pyroelectric crystal,vacuum electron source,X-ray spectrum,permittivity,X-ray energy,electron acceleration,electron emission,capacitance,Lithium Tantalate
更新于2025-09-23 15:21:21
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Structural Properties of (Sn1?xMgxO) Thin Films and Optical Parameter Dependence with Gamma Ray Irradiation
摘要： Tin-Magnesium oxide (Sn1?xMgxO) thin films were prepared on glass substrates using the chemical spray pyrolysis technique, whereupon the samples were irradiated by gamma rays using a Co-60 radioactive source. X-ray diffraction showed that all prepared films were polycrystalline in nature with a tetragonal structure and a preferential growth of crystallites in the (110) plane. In general, the average crystallite size, lattice constants, dislocation density and crystallite density decreased with increasing Mg doping from 0% to 8%. Further, atomic force microscopy showed that the thin films were smooth and homogenous. The optical properties were obtained by ultraviolet–visible spectrophotometry, and the transmittance and absorbance spectra before and after gamma ray irradiation were compared for all samples, whereby the absorption and extinction coefficients and real and imaginary parts of the dielectric were studied before and after irradiation. It was found that the energy band gap values decreased from 3.94 eV to 3.72 eV with increasing Mg doping from 0% to 8% before irradiation, and from 3.92 eV to 3.59 eV after irradiation. All optical constants increased with doping percentage before and after irradiation. Energy-dispersive x-ray spectroscopy showed that all structures contained Sn and O elements in the undoped state, and contained SnO2 and Mg in the doped state.
关键词： doping,SnO2 thin films,gamma ray,energy-dispersive x-ray technology,chemical spray pyrolysis,structural properties
更新于2025-09-23 15:21:21
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Time resolved and time integrated analysis of the AXUV photodiode diagnostics for EUV and soft X-ray emission of nanosecond-laser-produced plasma
摘要： This paper addresses the experimental results and analysis of the time-resolved and time-integrated of AXUV (absolute extreme ultraviolet) photodiode diagnostics. These results are obtained by the measurement of EUV and soft X-ray (SX) power radiation of plasma-produced under the interaction of laser pulse (intensity ～5 × 1011 W/cm2, pulse durations in the range of 10?30 ns and wavelength 1064 nm) with one steel-316 target. The EUV and SX signals with the three speci?c peaks are detected by AXUV photodiode. From the analysis of time resolved of the AXUV signal, it is inferred that the ?rst signal peak can dominantly be related to the free-free transition mechanism of radiation and also the latter related to the free-band and bond-bond transitions respectively. The energy of EUV and SX pulse emission is observed to be approximately linear, proportional to the laser pulse energy. The time integrated results show that, the average energy conversion e?ciency is determined to be about 3.7 %.
关键词： Free-free transition,AXUV photodiode,EUV and soft X-ray,Energy conversion e?ciency,Laser induced plasma,Free-bond transition
更新于2025-09-19 17:13:59