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[IEEE 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) - Ann Arbor, MI (2018.7.16-2018.7.18)] 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) - Nonlinear Equivalent-Circuit Model for Thin-Film Magnetic Material Based RF Devices
摘要： A nonlinear equivalent-circuit model is developed for thin-film magnetic material based RF devices such as frequency-selective limiter (FSL) and signal-to-noise enhancer (SNE). The ferromagnetic resonance is modeled by a RLC parallel circuit with parameters derived from Kittel’s equations. The nonlinear effect in magnetic material is represented by a pendulum model that predicts cross-frequency coupling as well as parametric oscillations of spins. The coupling of spin waves in different orders is also modeled by coupled nonlinear pendulum resonators with the exchange coupling between the spins represented by coupling inductors. The measurement results of a FSL in literature are used as a reference, and the model successfully predicts the threshold power level, nonlinear insertion loss, and frequency selectivity of the device.
关键词： Ferromagnetic resonance (FMR),Yttrium iron garnet (YIG),nonlinear model,thin film,frequency selective limiter (FSL)
更新于2025-09-23 15:21:21
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Ultrafast Multilevel Switching in Au/YIG/n-Si RRAM
摘要： Resistive random access memory (RRAM) with ultrafast and multilevel switching is extremely promising for next-generation nonvolatile memory. Here, ultrafast unipolar resistive switchings (≈540 ps) with high off/on resistance ratio (≈104) are obtained in yttrium iron garnet Y3Fe5O12 (YIG)-based resistive memory on n-Si substrate. The sub-nanosecond operation is also successfully performed up to 85 °C with an off/on resistance ratio of ≈103. In addition, by using different compliance currents for the set process, five discrete resistance levels with ultrafast switchings among them are achieved and the multilevel states show reliable retention (>104 s). The large, stable, reproducible, and reliable switching behaviors of the Au/YIG/n-Si RRAM cell shows its great potential for ultrafast multilevel memory applications.
关键词： yttrium iron garnet (YIG),unipolar resistance switching,multistates,fast switching
更新于2025-09-09 09:28:46