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Investigation of Electrical Characteristics on LaAlO <sub/>3</sub> /ZrO <sub/>2</sub> /IGZO TFTs with Microwave Annealing
摘要： Conventional thin film transistor suffered from high threshold voltage, poor subthreshold swing, and high operation voltage. These shortcomings make the traditional thin film transistor does not meet the needs with the high-performance, high-resolution, low temperature and energy conservation nowadays. Due to the good selectivity of energy transformation and rapid heating rate, microwave annealing is promising to replace conventional furnace annealing and applied in the investigation. LaAlO3/ZrO2 is employed as gate electrode and gate dielectric layer for a-IGZO TFTs, under the premise that performance of a-IGZO TFTs without decreasing. With adjusting the power/time of microwave annealing, the effect on electrical characteristics of a-IGZO TFTs is investigated.
关键词： ZrO2,Microwave Annealing,a-IGZO TFTs,LaAlO3
更新于2025-09-23 15:23:52
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24.4: High Performance Top-gate Self-aligned Coplanar a-IGZO TFTs with Light Shielding Metal Design
摘要： The TG-SA a-IGZO TFTs with different light shielding metal (SM) layers design were demonstrated and compared in this paper. Their electrical characteristics have been measured in order to systematically analyze the effect that the SMs ever made on. The relationship between device instability and different SMs design have been systematically analyzed. Then the prototype 14” OLED display with an excellent performance using TG-SA a-IGZO TFTs backplane have been made successfully, which indicates an excellent mass-production prospect.
关键词： reliability,light shielding metal,top-gate self-aligned coplanar structure,a-IGZO TFTs
更新于2025-09-23 15:23:52
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[IEEE 2018 International Flexible Electronics Technology Conference (IFETC) - Ottawa, ON, Canada (2018.8.7-2018.8.9)] 2018 International Flexible Electronics Technology Conference (IFETC) - A Comparitive Study of On-Chip Clock Generators Using a-IGZO TFTs for Flexible Electronic Systems
摘要： This paper presents a comparitive study of ring oscillators (RO) using amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) to implement on-chip clock generator for flexible electronic systems. A five-stage RO has been implemented with different inverter topologies using IGZO TFTs, which includes Diode connected load, Capacitive bootstrapping (BS), Pseudo-CMOS and Pseudo-CMOS bootstrapping architectures. These topologies have been simulated using in-house IGZO TFT models under similar conditions using different power supplies (10 V, 15 V and 20 V) in cadence environment. Among all architechtures Capacitive bootstrapping RO has ensured highest frequency of operation in the order of MHz and an output swing of 82% of VDD. Whereas, Pseudo-CMOS based RO provides the lowest power consumption in the order of μW with an output swing of 57% of VDD. On the other hand, the combination of Pseudo CMOS and bootstrapping has ensured highest voltage swing of 95% of VDD. In terms of power delay product (PDP) BS RO is superior with respect to other topologies. This work provides a clear insight to the designer to choose a particular topology for given application, mainly for on-chip clock generation for flexible electronic systems based on the requirements.
关键词： Bootstrapping,Ring Oscillator,Flexible on-chip clock generator,Pseudo-CMOS,a-IGZO TFTs
更新于2025-09-23 15:22:29
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Channel-Length Dependent Performance Degradation of Thermally Stressed IGZO TFTs
摘要： The focus of this work is on the performance degradation of thermally stressed IGZO TFTs with SiO2 for both the gate dielectric and back-channel passivation material. I-V characteristics of TFTs with bottom-gate (BG) and double-gate (DG) electrode configurations were observed to left-shift and degrade with thermal stress. Experimental results indicate the instability occurs either directly or indirectly due to the influence of H2O within the passivation oxide above the IGZO channel region. An atomic layer deposition (ALD) alumina capping layer applied immediately following the passivation oxide anneal was successful in improving thermal stability. Channel length dependence was observed where longer channel DG devices were more prone to degradation. A hypothesis has been developed with H2O as the expected origin of this phenomenon. Experiments have been specifically designed to establish the feasibility of the proposed mechanism. Furthermore, DG devices which exhibit enhanced thermal stability are presented.
关键词： thermal stability,SiO2 passivation,ALD alumina capping,IGZO TFTs,channel length dependence
更新于2025-09-23 15:21:01
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Two-step Degradation of a-InGaZnO Thin Film Transistors under DC Bias Stress
摘要： A unified explanation is proposed to consistently explain the two-step degradation of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) under DC positive bias temperature instability (PBTI) stress without or with different drain stress voltages (Vds). For PBTI stress without stress Vds, this initial negative Vth shift is believed to be induced by donor-like defect states corresponding to H2O molecule and intrinsic defects, while for PBTI stress with stress Vds, the negative shift is believed to be induced by donor-like defect states corresponding to oxygen vacancies. The gate-bias-induced electron trapping mechanism is responsible for positive Vth shift. These transitions from negative to positive Vth shift are resulted from the competition between the donor-like states creation and electron trapping.
关键词： PBTI,donor-like states creation,two–step degradation,electron trapping,IGZO TFTs,H2O molecule
更新于2025-09-23 15:21:01
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Device Structure and Passivation Options for the Integration of Scaled IGZO TFTs
摘要： The focus of this work is on the performance dependence of scaled the device structure and IGZO TFTs with variations semiconductor passivation scheme. TCAD simulation was used to provide insight on the details which establish the limits on electrostatic control. Dielectrics used for the gate and back-channel regions have been adjusted to overcome short-channel effects, along with required modifications in process recipes for PECVD passivation layers, oxygen ambient annealing, and ALD capping material. Scaled devices with channel lengths as small as L = 1 μm have been investigated and evaluated by the electrostatic behavior, and stability when subjected to thermal and bias stress. An optimized process and associated procedural details for scaled devices is presented, along with suggested options for further channel length reduction to submicron dimensions.
关键词： IGZO TFTs,scaling,TCAD simulation,electrostatic control,PECVD,short-channel effects,ALD,thermal stability,bias stress,passivation
更新于2025-09-16 10:30:52
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Investigation of Electrical Characteristics on AP-PECVD Fabricated Amorphous IGZO TFTs with Hydrogen Plasma Treatment
摘要： TFT panel production process can be divided into three kinds of technology. There have amorphous silicon (a-Si), low-temperature polysilicon (LTPS) and amorphous IGZO (a-IGZO) oxide. Traditional amorphous silicon (a-Si) silicon has a lot of advantages such as good productivity, short process and low-cost. It also has a lot of shortcomings on these applications on TFTs such as photosensitivity, light degradation, and opacity, etc. The dispute of the material based on a-Si:H as an active layer in TFT is low ?eld effect mobility (～1 cm2/V · S) (M. Shur and M. Hack, J. Appl. Phys. 55, 3831 (1984)), photo sensitivity (low band gap about 1.7 V) and high deposition temperature (～400 (cid:4)C) (M. Shur, et al., J. Appl. Phys. 66, 3371 (1989); K. khakzar and E. H. Lueder, IEEE Trans. Electron Devices IP: 146.185.205.202 On: Thu, 06 Dec 2018 10:11:54 39, 1438 (1992)). Amorphous In–Ga–Zn–O (IGZO) had attracted attention that compared with the conventional a-Si:H, in the past three years, a-IGZO thin ?lm transistors is more popular which compared with the other oxide semiconductors, because of its larger I on/I off ratio (>106(cid:2), smaller subthreshold swing (SS), better ?eld-effect mobility and better stability against electrical stress. Hydrogen plasma treatment is applied in improving a-IGZO TFTs active layer, which is fabricated by atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD), the electrical characteristics of a-IGZO TFTs is investigated.
关键词： a-IGZO TFTs,AP-PECVD,Hydrogen Plasma Treatment,Active Layer
更新于2025-09-04 15:30:14
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The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors
摘要： Amorphous oxide semiconductors (AOSs) are attracted much attention due to high mobility, low temperature deposition, ?exible, transmission, and uniformity. The thin ?lm transistors (TFTs) with a-IGZO thin ?lm as active layer perform higher ?eld-effect mobility (>10 cm2/V · S), larger I on/I off ratio (>106), smaller subthreshold swing and better stability against electrical stress. LaAlO3/ZrO2 is employed as gate electrode and gate dielectric layer for a-IGZO TFTs, under the premise that performance of a-IGZO TFTs without decreasing. Due to the good selectivity of energy transformation and rapid heating rate, microwave annealing is applied to improve the device reliability in the investigation. With adjusting the parameter of microwave annealing, the effect on reliability characteristics of a-IGZO TFTs is studied.
关键词： Microwave Annealing,Stretched-Exponential Model,IGZO TFTs,Positive Bias Stress
更新于2025-09-04 15:30:14