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Photoluminescence of a-Si/c-Si Heterojunction Solar Cells with Different Intrinsic Thin Layers
摘要： The photoluminescence of two types of heterostructural silicon solar cells with di?erent passivation of crystalline silicon layer was studied. The contributions of various processes to the photoluminescence are revealed by measuring the photoluminescence at low temperatures. It is shown that the dopant concentration in crystalline silicon for solar cells based on an amorphous silicon/crystalline silicon heterojunction can be estimated from photoluminescence spectra. The correlation between the photoluminescence kinetics of heterostructural silicon solar cells and the photoconversion e?ciency is established. An e?ective method to determine the quality of surface doping in crystalline silicon solar cells based on an amorphous silicon/crystalline silicon heterojunction is proposed.
关键词： amorphous silicon/crystalline silicon heterojunction,solar cells,photoluminescence of solar cells
更新于2025-09-12 10:27:22
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The versatility of passivating carrier‐selective silicon thin films for diverse high‐efficiency screen‐printed heterojunction‐based solar cells
摘要： Providing state‐of‐the‐art surface passivation and the required carrier selectivity for both contacts, hydrogenated amorphous silicon thin films are the key components of silicon heterojunction (SHJ) solar cells. After intensive optimization of these layers for standard front and back contacted (FBC) n‐type cells, high surface passivation levels were achieved on cell precursors, demonstrated by minority carrier lifetimes exceeding 18 ms on float‐zone (FZ) and 11 ms on Czochralski (Cz) c‐Si wafers. The application of these very same layers on cheaper and commercially available Cz p‐type wafers resulted in similar passivation quality, with lifetimes above 10 ms as well. Large‐area industrial bifacial FBC SHJ cells processed on wafers taken along the full length of a high‐resistivity Cz p‐type ingot showed efficiencies in the 22.5% to 23% range, significantly higher than previously reported results on such substrates and on par with their n‐type counterparts. Best efficiencies on large‐area monofacial devices (>220 cm2) are 23.6% on Cz p‐type and 24.4% on Cz n‐type, similar to certified results obtained on lab‐scale cells (4 cm2), 23.76% on FZ p‐type and 24.21% on FZ n‐type. Notably, no specific adaptation of the reference n‐type cell process was necessary to achieve these results on p‐type material. Additionally, a 25% certified efficiency has been obtained on medium‐sized (25 cm2) interdigitated back‐contacted SHJ cells, featuring the same passivation layers developed for FBC devices. These results illustrate the versatility of the SHJ technology for various high‐efficiency screen‐printed solar cell configurations and show possible ways to improve its competitiveness on the global photovoltaic market.
关键词： solar cell,heterojunction,amorphous silicon,passivated contacts,crystalline silicon
更新于2025-09-12 10:27:22
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Current Controlled Switching in Si/PS/a-Si Heterostructure
摘要： Current controlled switching has been observed in p-type crystalline Silicon (p-c-Si)/porous Si (PS)/n-type hydrogenated amorphous Silicon (n-a-Si:H) heterostructure. Mechanism of the switching is proposed consideringpresence of trapped carriers at the silicon nanocrystal-SiOx interface. A part of the trapped charges are considered to be bound near the n-a-Si:H/PS and PS/p-c-Si interface forming an additional coulomb barrier for the majority carriers. It is assumed that during the flow of current through the PS layer, the captured carriers get de-trapped by impact-excitation leading to breaking of the barrier after certain threshold value resulting in the switching. This model matches well with the experimental results.
关键词： amorphous silicon,interface,porous silicon,Switching
更新于2025-09-12 10:27:22
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Properties of boron doped ZnO films prepared by reactive sputtering method: Application to amorphous silicon thin film solar cells
摘要： Reactive sputtered boron-doped zinc oxide (BZO) film was deposited from argon, hydrogen and boron gas mixture. The reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide target. Textured surface was obtained in the as-deposited films. The surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration ratio. By varying the gas concentration ratio, the best obtained resistivity ~ 6.51×10-4 Ω-cm, mobility ~ 19.05 cm2 V-1 s-1 and sheet resistance ~ 7.23 Ω/□ were obtained. At lower wavelength of light, the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are >85%. We also fabricated amorphous silicon (a-Si) thin film solar cell on the best obtained BZO layers. The overall efficiency of the a-Si solar cell is 8.14%, found on optimized BZO layer.
关键词： amorphous silicon,BZO,solar cells,Zinc oxide (ZnO),Magnetron reactive sputtering
更新于2025-09-12 10:27:22
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Determining a Line Strength in the ν <sub/>3</sub> Band of the Silyl Radical Using Quantum Cascade Laser Absorption Spectroscopy
摘要： Silane (SiH4) plasmas are widely used for the deposition of hydrogenated amorphous silicon (a-Si:H) films. Nevertheless, the chemical processes governing film deposition are still incompletely understood. Moreover, there is still no general method available to determine the absolute concentration of the silyl radical (SiH3), which is the accepted chemical precursor of a-Si:H films. In this study, a 10% silane in helium RF plasma was spectroscopically investigated between 2085 and 2175 cm?1 using an external cavity quantum cascade laser (EC-QCL) based spectrometer. This led to the identification of 4 distinct species from their absorption features: SiH4, disilane (Si2H6), SiH3, and an unassigned short-lived species. Furthermore, 17 absorption features of SiH3 were identified and unambiguously assigned. Fast spectral scanning of selected absorption features belonging to the four species in a 10 Hz pulsed RF plasma enabled the measurement and interpretation of their temporal behavior in terms of plausible chemical reactions involving silicon containing species. By quantitatively measuring the decay of the SiH3 a ← a pP4 (5) transition at 2151.3207 cm?1 after the discharge was stopped, its line strength (S) was determined to be (7.5 ± 5.5) × 10?20 cm2 cm?1 mol?1.
关键词： quantum cascade laser absorption spectroscopy,hydrogenated amorphous silicon,Silane plasmas,line strength,silyl radical
更新于2025-09-12 10:27:22
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Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance
摘要： Hydrogenated amorphous Si(a‐Si:H) quintuple‐junction solar cells, which consist of a‐SiOx:H/a‐SiOx:H/a‐Si:H/a‐SiOx:H/a‐SiOx:H, were fabricated by plasma CVD method. The total thickness was 0.6‐0.8 μm. Irradiation intensity (Pin) dependence of the open circuit voltage (Voc) of quintuple‐junction solar cells was measured. The decreasing amount ΔVoc (1/10) of the open‐circuit voltage when the irradiation intensity became 1/10 was 62mV/cell. Voc drops rapidly from around the irradiation intensity of 1mW/cm2 (approximately 1,000 lux). This large Voc reduction is due to leakage current. Then, we discussed the origin of the leakage current, and, finally, by improving the leakage current, a very high open‐circuit voltage Voc of 3.5 V was demonstrated under LED light illumination. Furthermore, we theoretically analyzed Voc as a function of the irradiation intensity, including effects of the leakage current and the film quality of i‐a‐Si(O):H. It was found from the simulation results that it is necessary to increase the shunt resistance Rsh and to lower the defect density of i‐a‐Si(O):H in order to obtain a sufficient Voc‐Pin characteristics for IoT devices application under low illuminance.
关键词： solar cell,amorphous silicon,quintuple‐junction,low illuminance
更新于2025-09-11 14:15:04
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Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered With Color Filters for Use in Optical Sensors
摘要： This work investigates the long-term behavior of photo thin-film transistors (TFTs) that are covered with color filters and based on hydrogenated amorphous silicon (a-Si:H) technology. Based on the electrical characteristics and the optical responses of these TFTs as measured under different stress conditions, a new method for driving a photo TFT with a negative gate-source voltage is proposed to suppress the degradation of the photocurrent. The effectiveness of the newly proposed method is verified using our previously developed white-light photocurrent gating (WPCG) structure, the measurement of photocurrents, and the established models of red, green, and blue photo TFTs. An accelerated lifetime test of the fabricated circuit was carried out at 70 ?C and under the illumination of ambient light for 504 hours, demonstrating that the proposed method improves the long-term reliability of optical sensors.
关键词： optical sensor,Hydrogenated amorphous silicon thin-film transistor,long-term reliability
更新于2025-09-11 14:15:04
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Nonlinear process-induced spectral changes in hydrogenated amorphous silicon core optical fibre
摘要： In this paper, the spectral properties of temporal double pulses centred at the same central wavelength and two different central wavelengths are numerically presented based on hydrogenated amorphous silicon core optical fibre. In order to characterise the output spectra of double pulses, the group velocity dispersion and various nonlinear processes including self-phase modulation, cross-phase modulation, two-photon absorption, free carrier absorption and free carrier dispersion are considered in the theoretical model. Numerical results show that, under fixed fibre length condition, the widths of the outcome spectra are strongly dependent on the delay times, peak powers and initial chirps of input double pulses, i.e. widths of the output spectra are proportional to the launched peak powers, and the delay times control the separation between two pulses, resulting in the spectral change within a proper delay time, and the spectral widths are compressed or extended by judiciously adjusting the initial chirps imposed on the input pulses.
关键词： nonlinear processes,optical spectrum,optical fibre,Nonlinear optics,hydrogenated amorphous silicon
更新于2025-09-10 09:29:36
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Multioutputs single-stage gate driver on array with wide temperature operable thin-film-transistor liquid-crystal display for high resolution application
摘要： A hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor (TFT) gate driver with multioutputs (eight outputs per stage) for high reliability, 10.7‐inch automotive display has been proposed. The driver circuit is composed of one SR controller, eight driving TFTs (one stage to eight outputs) with bridging TFTs. The SR controller, which starts up the driving TFTs, could also prevent the noise of gate line for nonworking period. The bridging TFT, using width decreasing which connects between the SR controller and the driving TFT, could produce the floating state which is beneficial to couple the gate voltage, improves the driving ability of output, and reaches consistent rising time in high temperature and low temperature environment. Moreover, 8‐phase clocks with 75% overlapping and dual‐side driving scheme are also used in the circuit design to ensure enough charging time and reduce the loading of each gate line. According to lifetime test results, the proposed gate driver of 720 stages pass the extreme temperature range test (90°C and ?40°C) for simulation, and operates stably over 800 hours at 90°C for measurement. Besides, this design is successfully demonstrated in a 10.7‐inch full HD (1080 × RGB×1920) TFT‐liquid‐crystal display (LCD) panel.
关键词： thin film transistor (TFT),wide temperature,high reliability,gate driver,amorphous silicon (a‐Si)
更新于2025-09-09 09:28:46
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Light Entrapping, Modeling & Effect of Passivation on Amorphous Silicon Based PV Cell
摘要： This research paper present efforts to enhance the performance of amorphous silicon p-i-n type solar cell using sidewall passivation. For sidewall passivation, MEMS insulation material Al2O3 was used. The main objective of this paper is to observe the effect of sidewall passivation in amorphous silicon solar cell and increase the conversion efficiency of the solar cell. Passivation of Al2O3 is found effective to subdue reverse leakage. It increases the electric potential generated in the designed solar cell. It also increases the current density generated in the solar cell by suppressing the leakage. Enhancement in J-V curve was observed after adding sidewall passivation. The short circuit current density (Jsc) increased from 14.7 mA/cm2 to 18.5 mA/cm2, open circuit voltage (Voc) improved from 0.87 V to 0.89 V, and the fill factor also slightly increased. Due to the sidewall of passivation of Al2O3, conversion efficiency of amorphous silicon solar cell increased by 29.07%. At the end, this research was a success to improve the efficiency of the amorphous silicon solar cell by adding sidewall passivation.
关键词： Aluminum Oxide,Electric Potential,Passivation,COMSOL Multiphysics,Amorphous Silicon,Current Density
更新于2025-09-09 09:28:46