- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Development of Amorphous SIZO/Ag/Amorphous SIZO Multilayer for High-Performance Transparent Conducting Electrode by Controlling Ag Layer Thickness
摘要： A multilayered transparent conductive film of amorphous SiInZnO/Ag/amorphous SiInZnO (SIZO/Ag/SIZO) was fabricated and characterized. The electrical and optical properties of the multilayers changed with changes in the Ag film thickness. The electrodes with the optimized thickness showed an excellent average transmittance (T_av) of 94.04% and a high figure of merit (FOM) of 38.1 × 10^{-3} Ω^{-1}. As the Ag layer thickness increased over 9 nm, the FOM and sheet resistance decreased. This result could be attributed to the decrease in T_av due to light absorption and reflection from the thick Ag layer.
关键词： TCE,OMO,Amorphous Oxide,Si Doped InZnO
更新于2025-09-23 15:22:29
-
Si-doping effect on solution-processed In-O thin-film transistors
摘要： In this work, silicon-doped indium oxide thin-film transistors (TFTs) have been fabricated for the first time by a solution processing method. By varying the Si concentration in the In2O3-SiO2 binary oxide structure up to 15 at.%, the thicknesses, densities, and crystallinity of the resulting In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction techniques, while the produced TFTs were characterized by a conventional three-probe method. The results of XRR analysis revealed that the increase in the content of Si dopant increased the thickness of the produced film and reduced its density, and that all the Si-doped ISO thin films contained only a single amorphous phase even after annealing at temperatures as high as 800 °C. The manufactured ISO TFTs exhibited a reduction in the absolute value of threshold voltage VT close to 0 V and low current in the off-state, as compared to those of the non-doped indium oxide films, due to the reduced number of oxygen defects, which was consistent with the behavior of ISO TFTs fabricated by a sputtering method. The ISO TFT with a Si content of 3 at.% annealed at 400 °C demonstrated the smallest subthreshold swing of 0.5 V/dec, VT of ?5 V, mobility of 0.21 cm2/Vs, and on/off current ratio of about 2×107.
关键词： silicon-doped indium oxide,solution processing,amorphous oxide semiconductor,thin-film transistor,spin coating
更新于2025-09-23 15:21:01
-
Ozone-mediated Controllable Hydrolysis for High Quality Amorphous NbO <sub/>x</sub> Electron Transport Layer in Efficient Perovskite Solar Cells
摘要： Amorphous NbOx electron transport layer (ETL) shows great potential for boosting the power conversion efficiency (PCE) of perovskite solar cells (PSCs) at low temperature (< 100 °C). To date, it is still a challenge to simultaneously control the hydrolysis of NbOx precursor solution and reduce the impurities of NbOx ETLs during low-temperature solution processing under ambient conditions. Herein, for the first time, we report ozone (O3) as a strong ligand to stabilize Nb salt solution under ambient conditions. The above procedure not only provides the formation of a highly repeatable amorphous NbOx film by suppressing the hydrolysis of the solution but also reduces the OH content in the film, which decreases the defect intensity and improves the conductivity of the NbOx ETL. Thus, the formation of highly repeatable NbOx ETL-based PSCs are obtained; moreover, these PSCs have high PCE of 19.54% and 16.42% on rigid and flexible substrate, respectively, much higher than the devices based on ETLs from a solution without an O3 treatment.
关键词： NbOx,electron transport layer,perovskite solar cell,amorphous oxide semiconductors,low temperature
更新于2025-09-19 17:13:59
-
Oxygen Vacancy Controlled SiZnSnO Thina??Film Inverters with High Gain
摘要： Amorphous SiZnSnO (a-SZTO) thin film are succesfully deposited to control the electrical characteristics by changing the oxygen partial pressure [p(O2)] ratio during the deposition. As the p(O2) ratio increase, the on current, off current, and the field effect mobility (μFE) decrease and the threshold voltage (Vth) shift to the positive direction, gradually. This phenomenon occurred because the oxygen vacancies (VO) in the channel were suppressed due to the effect of oxygen injected during the deposition. To explore the possibility that the device can be applied to integrated thin film circuit and operate well in the application, the n-type only inverters are fabricated using VO controlled thin film transistors (TFTs). All inverters have clear voltage transfer characteristics (VTC) and well operated in the range of 3 V to 15 V of VDD. When Vth shift to positive direction in enhancement mode (E-mode), the voltage transition region (Vtr) of the inverter also shift to positive direction. The highest voltage gain is measured to be about 26.554 V/V at 15 V of VDD. It is proposed to be able to fabricate the inverters and control the transition value of VTC of the inverter simply by changing p(O2) ratio of E-mode TFT.
关键词： thin film transistors,n-type,amorphous oxide semiconductors,oxygen partial pressure
更新于2025-09-19 17:13:59
-
Extraordinary dielectric properties at heterojunctions of amorphous ferroelectrics
摘要： Materials having a high dielectric constant are needed for a variety of electrical applications from transistors to capacitors. Ferroelectric amorphous-oxide (glass) alkali-ion electrolytes of composition A2.99Ba0.005ClO (A = Li, Na) are shown by two different types of measurement and different consistent analysis to have extraordinarily high dielectric constants varying from 109 at 25°C to 1010 at 220°C if the glass is properly conditioned. These anomalously high dielectric properties coexist with alkali-ion conductivities at 25°C that are equivalent to those of the best organic-liquid electrolytes of a Li-ion cell, and cyclic voltammetry (CV) in a Au/glass electrolyte/Au cell is stable from ?10 to +10 V. A model to interpret microscopically all the key features of the CV curves shows that the electric-double-layer capacitors (EDLCs) that form at the gold/electrolyte interfaces in the Au/glass electrolyte/Au heterojunction reverse polarization at an applied voltage V = ± 2.1 V resulting in three almost equivalent discharging capacitances for a single physical capacitor from -10 to +10 V.
关键词： amorphous-oxide,ferroelectric,alkali-ion electrolytes,dielectric constant,electric-double-layer capacitors,cyclic voltammetry
更新于2025-09-09 09:28:46
-
Effect of the Active Channel Thickness Variation in Amorphous In–Zn–Sn–O Thin Film Transistor
摘要： Ternary oxide thin films in the In2O3–ZnO–SnO2 system were studied for potential applications in oxide semiconductor thin film transistors (TFTs). An amorphous In–Zn–Sn–O (a-IZTO) active channel layer was deposited by RF magnetron sputtering at room temperature on an n++ Si substrate. Films from a sintered ceramic target with a nominal chemical composition of In:Zn:Sn = 40:50:10 at.% were prepared with thicknesses ranging from 15 nm to 150 nm, which was followed by annealing at 350 °C for 30 minutes in air. Subsequently, a bilayer Cu/Ti metal contact was deposited as the source/drain electrodes on the top surface through a shadow mask using an e-beam evaporator. The thickness of the active channel layer greatly influenced the characteristics of the oxide thin film transistors. The best transistor characteristics were observed from the test device with a channel thickness of 30 nm and a high on/off current ratio of approximately 108, high field effect mobility of 25 cm2/Vs, low threshold voltage of ?0.1 V, and very small subthreshold swing of 0.14 V/dec.
关键词： Thin Film Transistor,In–Zn–Sn–O,Amorphous Oxide,RF Magnetron Sputtering,IZTO,Channel Thickness
更新于2025-09-09 09:28:46
-
Exploiting In Situ Redox and Diffusion of Molybdenum to Enable Thin-Film Circuitry for Low-Cost Wireless Energy Harvesting
摘要： Direct additive fabrication of thin-film electronics using a high-mobility, wide-bandgap amorphous oxide semiconductor (AOS) can pave the way for integration of efficient power circuits with digital electronics. For power rectifiers, vertical thin-film diodes (V-TFDs) offer superior efficiency and higher frequency operation compared to lateral thin-film transistors (TFTs). However, the AOS V-TFDs reported so far require additional fabrication steps and generally suffer from low voltage handling capability. Here, these challenges are overcome by exploiting in situ reactions of molybdenum (Mo) during the solution-process deposition of amorphous zinc tin oxide film. The oxidation of Mo forms the rectifying contact of the V-TFD, while the simultaneous diffusion of Mo increases the diode’s voltage range of operation. The resulting V-TFDs are demonstrated in a full-wave rectifier for wireless energy harvesting from a commercial radio-frequency identification reader. Finally, by using the same Mo film for V-TFD rectifying contacts and TFT gate electrodes, this process allows simultaneous fabrication of both devices without any additional steps. The integration of TFTs alongside V-TFDs opens a new fabrication route for future low-cost and large-area thin-film circuitry with embedded power management.
关键词： additive fabrication,amorphous oxide semiconductors,thin-film circuitry,large-area electronics,solution process
更新于2025-09-04 15:30:14
-
Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors
摘要： While it is known that the charge-carrier mobility in amorphous metal oxide semiconductor thin ?lm transistors (TFT) deviates from Arrhenius temperature dependence, we found that the Hall mobility measured in amorphous In-Ga-Zn-O (a-IGZO) follows an Arrhenius relation surprisingly well. We explain these observations by the effect of strong vertical electric ?eld created by the gate voltage, which facilitates direct tunneling of trapped carriers into the conductive band and leads to virtually temperature independent mobility. We present a generalized Arrhenius model based on the effective temperature concept. We show that our model allows quantitative description of the temperature dependence of the mobility in a-IGZO TFTs over a broad temperature range.
关键词： charge transport,thin film transistors,Arrhenius relation,amorphous oxide semiconductor,electric field
更新于2025-09-04 15:30:14
-
[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Development of Memristor Characteristic Device Using In-Ga-Zn-O Thin Film
摘要： In this presentation, we propose an amorphous oxide semiconductors (AOSs) In-Ga-Zn-O(IGZO) thin film for a memristor characteristic device. We fabricated the memristor characteristic device active layer using IGZO and electrodes using aluminum by physical vapor deposition (PVD). The Al/IGZO/Al cell device showed the bipolar switching characteristic of a switching voltage 2 and reproducibility 10.
关键词： memristor characteristic,IGZO,amorphous oxide semiconductors,Al
更新于2025-09-04 15:30:14