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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Analysis of 1/f Noise for Organic TFTs Considering Mobility Power-Law Parameter
摘要： Based on carrier number fluctuation model, 1/f noise is analyzed for organic thin-film transistors (TFTs) at low drain voltage. The carrier mobility is gate-voltage-dependent, and is described by a power-law function. The mobility power-law parameter α determines the relationship between drain current noise power spectral density (PSD) SIDS and drain current IDS, and it is found that SIDS /I 2 DS when α = 1. It is different from the well-known rule for the MOSFETs with the constant carrier mobility: When SIDS /I 2 DS , Hooge’s mobility fluctuation model dominates the 1/f noise.
关键词： carrier mobility,Thin-film transistor (TFT),analytical model,low frequency noise
更新于2025-09-23 15:23:52
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Analytical model of the fundamental mode of 3D square split ring resonators
摘要： An analytical model is developed for the charge and potential distributions of the fundamental mode of three-dimensional (3D) singly split ring resonators (SRRs) with square cross section, which nowadays can be conveniently fabricated by additive manufacturing techniques. This model allows the derivation of approximate formulas for the equivalent capacitance and the analysis of the resonant properties of this type of SRRs at any frequency. The total capacitance is expressed as the sum of the usual gap capacitance and a surface capacitance associated with the charges on the SRR walls, which are determined from the solution for the irrotational part of the electric field of a square split cylinder obtained by conformal mapping. The applicability of the proposed model for a broad range of SRR parameters is demonstrated by comparing the resonance frequency of sample SRR configurations found theoretically with the corresponding values obtained by numerical simulations and experiments. Furthermore, the functions describing the charge and current mode profiles provided in this work can be instrumental in estimating the near-field interaction and the coupling constants of an ensemble of resonant 3D square split rings and thus for tailoring the response of metamaterials and other devices formed by these elements.
关键词： capacitance,resonance frequency,analytical model,split ring resonators,metamaterials
更新于2025-09-23 15:22:29
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Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs
摘要： In nanoscale fully depleted silicon-on-insulator (FD-SOI) MOSFETs, the standard deviation of threshold voltage (σVth) caused by random dopant fluctuation (RDF) is an important parameter to predict the performance of transistors and circuits. In this paper, an analytic model of σVth considering both the dopant 'number' and dopant 'position' fluctuation in channels is proposed. A new model of σVth,num caused by 'number' is given and the method of obtaining the 'position' influence ratio Rp is discussed in this paper. Moreover, the simulation methods are analyzed in detail. The calculated σVth values in FD-SOI MOSFETs are compared with the Sentaurus TCAD simulation results at different channel lengths, channel doping concentrations, SOI film thicknesses, front gate oxide thicknesses, and buried-oxide thicknesses. The comparison shows that the proposed model matches well with the obtained numerical simulation results.
关键词： threshold voltage variation,analytical model,fully depleted silicon-on-insulator MOSFETs,Sentaurus TCAD simulation,random dopant fluctuation
更新于2025-09-23 15:22:29
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[IEEE 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018) - Nagoya, Japan (2018.9.9-2018.9.14)] 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - On the Contribution of Thermally Generated Surface Plasmon-Polaritons to Heat Radiation of Metal Objects
摘要： We present theoretical and experimental evaluations of the thermally generated surface plasmon polaritons (TSPPs) contribution to heat radiation of metal objects. It is found that this contribution is significant only for the edges of such objects flat facets observed at sliding angles to the facets planes and it is p-polarized. The analytical model for calculation the spectrum and the integral intensity of the entire set of TSPPs arriving to the edge of their sources line has been developed. In contrast to thermal radiation, intensity of TSPPs is proportional to the third rather than fourth degree of temperature, while the TSPP spectrum is shifted towards low frequencies relative to the thermal radiation spectrum.
关键词： thermally generated surface plasmon polaritons,metal objects,heat radiation,p-polarized,analytical model
更新于2025-09-23 15:21:21
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The Average Grain Size and Grain Aspect Ratio in Metal Laser Powder Bed Fusion: Modeling and Experiment
摘要： The additive manufacturing (AM) process induces high uncertainty in the mechanical properties of 3D-printed parts, which represents one of the main barriers for a wider AM processes adoption. To address this problem, a new time-efficient microstructure prediction algorithm was proposed in this study for the laser powder bed fusion (LPBF) process. Based on a combination of the melt pool modeling and the design of experiment approaches, this algorithm was used to predict the microstructure (grain size/aspect ratio) of materials processed by an EOS M280 LPBF system, including Iron and IN625 alloys. This approach was successfully validated using experimental and literature data, thus demonstrating its potential efficiency for the optimization of different LPBF powders and systems.
关键词： laser powder bed fusion,additive manufacturing,microstructure,process optimization,analytical model
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Understanding the Sidewall Dependence of Loss for Ge-on-Si Waveguides in the Mid-Infrared
摘要： An empirical model for field-effect transistor (FET) based power detectors is presented. The electrical model constitutes a Volterra analysis based on a Taylor series expansion of the drain current together with a linear embedding small-signal circuit. It is fully extracted from S-parameters and IV curves. The final result are closed-form expressions for the frequency dependence of the noise equivalent power (NEP) in terms of the FET intrinsic capacitances and parasitic resistances. Excellent model agreement to measured NEP of coplanar access graphene FETs with varying channel dimensions up to 67 GHz is obtained. The influence of gate length on responsivity and NEP is theoretically and experimentally studied.
关键词： field-effect transistors (FETs),Volterra,terahertz detectors,microwave detectors,graphene,power detectors,Analytical model
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 2nd International Conference on Knowledge Innovation and Invention (ICKII) - Seoul, Korea (South) (2019.7.12-2019.7.15)] 2019 IEEE 2nd International Conference on Knowledge Innovation and Invention (ICKII) - A Physical Threshold Voltage Model of Nanoscale Ultra-thin Body Ultra-thin Box SOI MOSFETs with a Gaussian Doping Profile
摘要： An insightful study of the virtual cathode is performed for the nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a vertical Gaussian doping. And the physical, compact threshold voltage model is derived based on an analytical solution of two-dimensional Poisson equation with the evanescent-mode analysis. The accuracy of the model has been verified by 2D numerical device simulations using Sentaurus Technology Computer-Aided Design (TCAD) from Synopsys. Applying the newly developed model, the threshold voltage sensitivities to channel length, silicon-film thickness, buried-oxide thickness, and the channel doping concentration have been comprehensively investigated. Good agreements are achieved. Model predictions indicate that the individual UTBB-SOI MOSFET with a non-uniform doping profile is feasible at 10 nm scale. This work has both theoretical and practical significance and provide aids in promoting theoretical modeling research and applications of new UTBB-SOI based devices.
关键词： UTBB-SOI MOSFET,Analytical model,Gaussian doping,Virtual cathode
更新于2025-09-23 15:21:01
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An optimized Graphene/4H-SiC/Graphene MSM UV-photodetector operating in a wide range of temperature
摘要： In this paper, .an accurate analytical model has been developed to optimize the performance of an Interdigitated Graphene Electrode/p-silicon carbide (IGE/p-4H-SiC) Metal semiconductor fitness function for the multi objective optimization (MOGA) approach. The optimized sensitivity and speed performances was executed. Our results confirm the excellent ability of the suggested Graphene electrode system to decrease the unwanted shadowing effect. A responsivity of 238 μA/W was obtained under 325-nm illumination compared to the 16.7 μA/W for the conventional Cr-Pd/p-SiC PD. A photocurrent to- dark-current ratio (PDCR) of 5.75 × 105 at 300K and 270 at 500K was distinguished. The response time was found to be around 14 μs at 300K and 54.5 μs at 500K. Furthermore, the developed model serves as a fitness function to recognize the IGE formalism pattern which permits the enhancement of the performance of the proposed Gr/4H-SiC IE MSM PD using MOGA-based technique. The achieved results indicate that the suggested design methodology not only permits to realize a superior compromise amid responsivity and response time, but also shed light on the proposed device’s ruggedness under high temperature conditions. This opens the way to realize ultra-sensitive, high-speed SiC optoelectronic devices for extremely high temperature applications.
关键词： Analytical Model,UV photodetector,Graphene,MOGA approach,4H-SiC,interdigitated electrodes
更新于2025-09-23 15:19:57
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Technique for constructing hemispherical dielectric lens antennas
摘要： Hemispherical dielectric lens antennas can be designed to present multifunctional operation. Simple and efficient mathematical modeling to design these structures is presented. The constructing technique is based on the lens material and the desired operational frequency of the dielectric lens antennas. The analytical developed model was compared with both complete wave numerical simulations and practical experiments. The results indicate that the proposed equations to build hemispherical dielectric lens antennas are adequate for different operational frequencies and also for different dielectric lens materials.
关键词： analytical model,lens reflections and resonances,dielectric lens antenna,focal length,gain
更新于2025-09-19 17:15:36
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Comparison of operational performance and analytical model of high concentrator photovoltaic thermal system at 2000 concentration ratio
摘要： This paper presents the development of a model based on efficiency equations to evaluate the performance of an HCPV/T system and compares its outputs with data of an operational case-study system installed in Palermo, Italy. The model is validated with data of the operational system to show real performance. The model can evaluate (a) the electric efficiency of the InGaP/InGaAs/Ge TJ solar cell and (b) electrical and thermal power/energy production potential of one module. The model predictions are compared with experimental electric and thermal data by obtaining linear regression plots of experimental results vs. analytical results; the R2 for experimental electrical and thermal results are 0.91 and 0.87 respectively. Using the model, the evaluated average daily analytical and experimental InGaP/InGaAs/Ge TJ solar cell efficiencies are 33 % and 25 % respectively; with a maximum daily experimental value of 30 %. It was found that the annual analytical and potential (based on derived equations from experimental data) electric energy produced by one module are 158 kWh/m2/year and 144 kWh/m2/year respectively, while the annual analytical and potential thermal energy are 375 kWh/m2/year and 390 kWh/m2/year respectively.
关键词： InGaP/InGaAs/Ge TJ solar cell,HCPV/T system,analytical model,thermal energy,electric efficiency
更新于2025-09-19 17:13:59