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3.4: Applications of TFE mask‐less technology for foldable AMOLED displays
摘要： Thin-film encapsulation (TFE) for foldable AMOLED display is necessary to have good reliability and excellent bendability. TFE mask induces particles easily and crack occurs in thick TFE layer during panel bending. We developed TFE with Al2O3 layer for high water-proof and very thin thickness, satisfying the requirement of reliability and bendability. The Al2O3 layer in TFE structure was deposited by low temperature atomic layer deposition (ALD) method，and we realized TFE mask-less process through adapting dry-etch parameters for Al2O3 etch, finding that BCl3 has very excellent dry-etch selectivity between inorganic layer (SiOx/SiNx/SiOxNy) and Al2O3. Besides, we also attempted to make the organic layer of TFE acted as etch mask, and it proved to be feasible, indicating that all the TFE masks could be taken out effectively. Moreover, we proved good optic and reliability characteristics of AMOLED display with mask-less TFE structure.
关键词： Atomic Layer Deposition (ALD),mask-less,Thin-Film Encapsulation (TFE),AMOLED
更新于2025-09-11 14:15:04
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Band alignment of BiOCl/ZnO core shell nanosheets by X-ray photoelectron spectroscopy measurements
摘要： To improve optoelectronic properties of bismuth oxyhalides, hybrid BiOX photocatalytic materials have draw a great attention, because of the separation of photogenerated electron-hole pairs. The band offset and band alignments are considered as the key parameters to elaborate carrier transport properties in heterojunction. In this paper, to determine the band alignment of BiOCl and ZnO heterostructure, BiOCl/ZnO core shell nanosheets with different thickness of shell layer were synthesized. The valence band offset (VBO or DEV) of BiOCl/ZnO heterostructure was determined using X-ray Photoelectron Spectroscopy measurements. The DEV value of 0.294 § 0.10 eV was calculated by using the Zn 2p3/2, Bi 4f5/2 binding energies as references. Taking the band gaps of 3.37 eV and 3.4 eV for ZnO and BiOCl samples into consideration, respectively, we obtained the type-II band alignment of BiOCl/ZnO heterostructure with a conduction band offset (CBO or DEc) of 0.324 § 0.10 eV.
关键词： X-ray photoelectron spectroscopy (XPS),band offset,BiOCl,ZnO,atomic layer deposition (ALD)
更新于2025-09-09 09:28:46
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Photoelectrochemically Active N‐Adsorbing Ultrathin TiO <sub/>2</sub> Layers for Water‐Splitting Applications Prepared by Pyrolysis of Oleic Acid on Iron Oxide Nanoparticle Surfaces under Nitrogen Environment
摘要： Highly performing photocatalytic surfaces are nowadays highly desirable in energy fields, mainly due to their applicability as photo water-splitting electrodes. One of the current challenges in this field is the production of highly controllable and efficient photoactive surfaces on many substrates. Atomic layer deposition has allowed the deposition of photoactive TiO2 layers over wide range of materials and surfaces. However, nitrogen doping of the growing layers, a highly effective way of controlling the absorption edges of photoactive surfaced, is still a challenging task. Here, the preparation of hierarchical nanostructured surfaces based on Langmuir–Schaefer and atomic layer deposition is proposed. Ultrathin TiO2 layers that are photoelectrochemically active in water splitting are prepared by a relatively low-temperature catalytic decomposition of oleic acid capping layers of iron oxide nanoparticles and the posterior nitrogen adsorption. The results evidence that simple N-adsorption is sufficient to narrow the bandgap of TiO2 layers that is equal to bandgap narrowing (0.12 eV) observed for substitutionally N-doped materials. The photocatalytic activity tests of the prepared surfaces in water-splitting applications demonstrate ≈90% increase in the activity of the N-adsorbing TiO2 layers.
关键词： Langmuir–Schaefer,magnetite (Fe3O4),photocatalysis,titanium dioxide (TiO2),atomic layer deposition (ALD)
更新于2025-09-04 15:30:14
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Mixed-Phase (2H and 1T) MoS2 Catalyst for a Highly Efficient and Stable Si Photocathode
摘要： We describe the direct formation of mixed-phase (1T and 2H) MoS2 layers on Si as a photocathode via atomic layer deposition (ALD) for application in the photoelectrochemical (PEC) reduction of water to hydrogen. Without typical series-metal interfaces between Si and MoS2, our p-Si/SiOx/MoS2 photocathode showed efficient and stable operation in hydrogen evolution reactions (HERs). The resulting performance could be explained by spatially genuine device architectures in three dimensions (i.e., laterally homo and vertically heterojunction structures). The ALD-grown MoS2 overlayer with the mixed-phase 1T and 2H homojunction passivates light absorber and surface states and functions as a monolithic structure for effective charge transport within MoS2. It is also beneficial in the operation of p-i-n heterojunctions with inhomogeneous barrier heights due to the presence of mixed-phase cocatalysts. The effective barrier heights reached up to 0.8 eV with optimized MoS2 thicknesses, leading to a 670 mV photovoltage enhancement without employing buried Si p-n junctions. The fast-transient behaviors via light illumination show that the mixed-phase layered chalcogenides can serve as efficient cocatalysts by depinning the Fermi levels at the interfaces. A long-term operation of ~70 h was also demonstrated in a 0.5 M H2SO4 solution.
关键词： pinch-off effect,molybdenum disulfide,photoelectrochemical water splitting (PEC),p-i-n heterojunction,atomic layer deposition (ALD)
更新于2025-09-04 15:30:14