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Enhanced light-matter interaction in an atomically thin semiconductor coupled with dielectric nano-antennas
摘要： Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities having the optical mode volume close to or below the diffraction limit. Recently, it has become possible to make all-dielectric nano-cavities with reduced mode volumes and negligible non-radiative losses. Here, we realise low-loss high-refractive-index dielectric gallium phosphide (GaP) nano-antennas with small mode volumes coupled to atomic mono- and bilayers of WSe2. We observe a photoluminescence enhancement exceeding 104 compared with WSe2 placed on planar GaP, and trace its origin to a combination of enhancement of the spontaneous emission rate, favourable modification of the photoluminescence directionality and enhanced optical excitation efficiency. A further effect of the coupling is observed in the photoluminescence polarisation dependence and in the Raman scattering signal enhancement exceeding 103. Our findings reveal dielectric nano-antennas as a promising platform for engineering light-matter coupling in two-dimensional semiconductors.
关键词： atomically thin semiconductor,light-matter interaction,Raman scattering,dielectric nano-antennas,photoluminescence enhancement
更新于2025-09-12 10:27:22
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Interaction-induced photon blockade using an atomically thin mirror embedded in a microcavity
摘要： Narrow bright or dark resonances associated with electromagnetically induced transparency play a key role in enhancing photon-photon interactions. The schemes realized to date relied on the existence of long-lived atomic states with strong van der Waals interactions. Here, we show that by placing an atomically thin semiconductor with ultrafast radiative decay rate inside a microcavity, it is possible to obtain extremely narrow dark or bright resonances in transmission. While breaking of translational invariance sets a limit on the width of the dark resonance width, it is possible to obtain a narrow bright resonance that is much narrower than the cavity and bare exciton decay rates and is protected against disorder by tuning the cavity away from the excitonic transition. Resonant excitation of this bright resonance yields strong photon antibunching even in the limit where the interaction strength is arbitrarily smaller than the non-Markovian disorder broadening and the radiative linewidth of the bare exciton. Our findings suggest that atomically thin semiconductors which exhibit large exciton-cavity coupling and small nonradiative line broadening could pave the way for the realization of strongly interacting photonic systems in the solid state.
关键词： electromagnetically induced transparency,photon blockade,photon-photon interactions,microcavity,atomically thin semiconductor
更新于2025-09-10 09:29:36