- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Design of Substrate Integrated Gap Waveguide and Their Transitions to Microstrip Line, for Millimeter-Wave Applications
摘要： This paper offers an approximate, but very convenient and accurate, manner to find the desired strip width for substrate integrated gap waveguide (SIGW) with a given characteristic impedance and the conductor and dielectric attenuation constants, without any complicated manual calculations or time-consuming full-wave simulation and optimization iterations. Moreover, the investigation of the transition between SIGW and microstrip lines will prove that an additional transition structure, such as a conventional microstrip taper, is not required any more at millimeter-wave frequencies for the desired transmission performance. This is a useful feature in circuit design and compactness. Both of the above works will be of great help to realize future feeding networks for SIGW antenna arrays or other types of cost-effective SIGW passive components at high frequencies. Two SIGW prototypes, working at Ka and V bands, are fabricated and offer experimental verifications, which present good agreement with the simulation results.
关键词： 5G,characteristic impedance,Gap waveguide,transition,attenuation constant,millimeter waves
更新于2025-09-11 14:15:04
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HIGH FREQUENCY ELECTRICAL CHARACTERIZATION OF 3D SIGNAL/GROUND THROUGH SILICON VIAS
摘要： 3D integration using through-silicon-vias (TSVs) is gaining considerable attention due to its superior packaging e?ciency resulting in higher functionality, improved performance and a reduction in power consumption. In order to implement 3D chip designs with TSV technology, robust TSV electrical models are required. Speci?cally, due to the increase of signal speeds into the gigahertz (GHz) spectrum, a high frequency electrical characterization best describes TSV behavior. In this letter, 5 × 50 μm TSVs are manufactured using a via-mid integration scheme and characterized using S-parameters up to 65 GHz. At 50 GHz, the measured attenuation constant is 0.35 dB/via with a time delay of 0.7 ps/via.
关键词： time delay,3D integration,attenuation constant,through-silicon-vias (TSVs),S-parameters,high frequency electrical characterization
更新于2025-09-09 09:28:46