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oe1(光电查) - 科学论文

3 条数据
?? 中文（中国） ▾

  • Charged solitons in branched conducting polymers

    摘要： We consider the dynamics of charged solitons in branched conducting polymers, such as, e.g., trans-polyacetylene. An effective model based on the sine-Gordon equation on metric graphs is used for computing the charge transport and scattering of charge carriers at the polymer branching points. The condition for the ballistic charge carrier transport is revealed.

    关键词： metric graphs,charged solitons,charge transport,branched conducting polymers,ballistic transport,sine-Gordon equation

    更新于2025-09-23 15:21:21

  • 1D ballistic transport channel probed by invasive and non-invasive contacts

    摘要： Epitaxially grown sidewall graphene nanoribbons show a robust quantum conductance of e2/h. By means of in-situ transport measurements with a nanoprobe system, we realized invasive and non-invasive 4-point-probe configurations. The invasiveness correlates with the contact resistance of the voltage probes. In particular, we achieved now non-invasive voltage probes revealing an almost zero resistance in a collinear 4 point-probe measurement. This proofs the ballistic nature of our epitaxially grown sidewall nanoribbons on SiC(0001) mesa structures.

    关键词： quantum conductance,graphene nanoribbons,ballistic transport,non-invasive contacts,invasive contacts

    更新于2025-09-23 15:21:21

  • DFT coupled with NEGF study of the electronic properties and ballistic transport performances of 2D SbSiTe <sub/>3</sub>

    摘要： Identifying novel 2D semiconductors with promisingly electronic properties and transport performances for the development of electronic and optoelectric applications is of utmost importance. Here, we show a detailed study of the electronic properties and ballistic quantum transport performance of a new 2D semiconductor, SbSiTe3, based on density functional theory (DFT) and non-equilibrium Green formalism. Promisingly, monolayer SbSiTe3 owns an indirect band gap of 1.61 eV with a light electron effective mass (0.13 m0) and an anisotropic hole effective mass (0.49 m0 & 1.34 m0). The ballistic performance simulations indicate that the 10-nm monolayer SbSiTe3 n- and p-MOSFETs display a steep subthreshold swing of about 80 mV/dec and a high on/off ratio (106), which indicates a good gate controlling capacibility. As the channel length of SbSiTe3 decreases to 5 nm, its p-MOSFET can also effectively suppress the intra-band tunneling. Therefore, 2D SbSiTe3 is a potential semiconductor for the future nano electronics.

    关键词： electronic properties,MOSFET,SbSiTe3,2D semiconductor,ballistic transport

    更新于2025-09-19 17:13:59