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Electrical properties of α-Ir <sub/>2</sub> O <sub/>3</sub> /α-Ga <sub/>2</sub> O <sub/>3</sub> pn heterojunction diode and band alignment of the heterostructure
摘要： Corundum-structured iridium oxide (a-Ir2O3), showing p-type conductivity, is a strong candidate to form high-quality pn heterojunctions with a-Ga2O3. We fabricated a-Ir2O3/a-Ga2O3 pn heterojunction diodes and they showed well-defined rectifying current-voltage (I-V) characteristics with the turn-on voltage of about 2.0 V. The band alignment at the a-Ir2O3/a-Ga2O3 interface was investigated by X-ray photoemission spectroscopy, revealing a staggered-gap (type-II) with the valence- and conduction-band offsets of 3.34 eV and 1.04 eV, respectively. The total barrier height for electrons was about 2.4 eV, which reasonably agreed with the turn-on voltage in the I-V characteristics. This means that electrons are mainly attributed to electrical conduction around the turn-on voltage.
关键词： pn heterojunction,a-Ir2O3,X-ray photoemission spectroscopy,a-Ga2O3,band alignment
更新于2025-09-09 09:28:46
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) van der Waals Heterojunctions
摘要： Van der Waals heterojunctions (vdWHs) have gained extensive attention because they can integrate the excellent characteristics of the stacked materials and most vdWHs exhibit type-II band alignment. However, type-III vdWHs with broken gaps are still very rare, which limits the development and application of two-dimensional (2D) materials in the fields of tunnel FETs (TFETs). Here, we theoretically demonstrate that 2D phosphorene/SnS2 (SnSe2) vdWHs possess type-III (broken-gap) band alignment, and their I-V curves present negative differential resistance (NDR) effects. The BTBT transport mechanism and its applications in TFETs are analyzed. Interestingly, a positive electric field can enlarge the tunnelling window and a negative electric field can realize multiple-band-alignment transformation (type I, type II, and type III). Thus, this work presents the intrinsic physics mechanism and electric field tunable multiple-band alignments in 2D type-III vdWHs and related electronic devices.
关键词： tunnel FETs,SnS2,phosphorene,type-III band alignment,Van der Waals heterojunctions,electric field,SnSe2
更新于2025-09-09 09:28:46
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Deposition and Determination of Band Alignment of Al2O3/Si Gate Stacks by New CVD Chemistry
摘要： Compared to other precursors, dimethyl aluminum hydride [(CH3)2AlH] has high vapor pressure of 2 torr at room temperature and a potential to form alumina films by CVD/ALD with low carbon impurity. Additionally, low deposition temperature of dimethyl aluminum hydride will avoid the formation of low-k interfacial layer during deposition, which is suitable for the MOS device fabrication. In this study, Al2O3 thin films have been deposited successfully from dimethyl aluminum hydride and O2 to investigate the MOCVD behaviour as well as the observation of the band alignment of deposited Al2O3/Si gate stacks.
关键词： Precursor,High-k gate dielectrics,Band alignment,Thermal stability
更新于2025-09-04 15:30:14