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The transparent Schottky junction of reduced graphene oxide/SnO <sub/>2</sub> nanoarrays towards enhanced broadband photoresponse
摘要： The rGO/SnO2 nanoarrays (rGO/SnO2 NAs) Schottky junction is synthesized by a series of RF magnetron sputtering, hydrothermal and electrochemical deposition. The unique transparent junction exhibits the broadband photoelectric responses from the ultraviolet to visible light. As shown, the proper rGO/SnO2 NAs display highly transparency of about ~60% and dramatically enhance photoelectric conversion of about ~100 times than that of the initial Schottky junction. Finally, the mechanism of the Schottky junction is investigated.
关键词： reduced graphene oxide,broadband photoresponse,transparent Schottky junction,SnO2 nanoarrays
更新于2025-09-16 10:30:52
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Fast and broadband photoresponse of few-layer GeSe field-effect transistor with direct bandgaps
摘要： Few-to-monolayer germanium selenide, a new Ⅳ-Ⅵ group layered material recently fabricated by mechanical exfoliation and subsequent laser thinning, is promising in very fast and broadband optoelectronic applications for its excellent stability, natural p-type semiconductor, complicated band structures, and inert surface properties. However, large-scale production of such few-layer GeSe devices with superior performance is still in early stages. In this study, field-effect transistors (FETs) made of few-layer GeSe with direct bandgaps are fabricated. Transistor performance with Schottky contact characteristics is measured at room temperature. Field effect mobility of 4 cm2/Vs and drain currents modulated both in hole and electrons are measured. Photoresponse as a function of the illumination wavelength, power, and frequency are characterized. The few-layer GeSe transistor shows photoresponse to the illumination wavelengths from the visible up to 1400 nm, and photoresponse rise (fall) time of 13 μs (19 μs), demonstrating very broadband and fast detection. The ambipolar behavior and the photoresponse characteristics demonstrate great potential of few-layer GeSe for applications in high stability, very fast and broadband of optoelectronic devices.
关键词： broadband photoresponse,photoresponse time,ambipolar behavior,field effect transistors,direct bandgaps,few-layer GeSe
更新于2025-09-12 10:27:22
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Charge Transport Behavior and Ultrasensitive Photoresponse Performance of Exfoliated F <sub/>16</sub> CuPc Nanoflakes
摘要： Air-stable, photosensitive copper hexadecafluorophthalocyanine (F16CuPc) is a promising n-type semiconductor for organic electronics and optoelectronics. However, the performance of F16CuPc-based devices is significantly limited by the poor crystallinity of thin films. Here, the charge transport and electrical contact behavior of F16CuPc nanoflakes, mechanically exfoliated from needle-like bulk single crystals, are probed by analyzing the temperature-dependent carrier mobility and conductance, where the multiple-trap/release- and band-like transport mechanism govern the charge transport at different temperature ranges and carrier densities. F16CuPc nanoflake-based field effect transistors (FETs) exhibit high on-state current and ON/OFF ratio, one-order magnitude higher than those of reported F16CuPc nanowires, thin films, and nanoribbons. Besides, F16CuPc nanoflake-based phototransistors exhibit attractive photoresponse performance in the spectral range of 300–750 nm even at quite low operating source–drain voltage (1 V), with maximum photoresponsivity of 19 A W?1, detectivity of 8 × 1012 Jones, and fast response speed of 36 ms, which is attributed to the single-crystalline characteristic of nanoflakes, and the resultant efficiently exciton diffusion and charge transport. The work demonstrates that 2D organic nanoflakes with single-crystalline feature will be promising candidates for flexible electronic and optoelectronic devices.
关键词： organic phototransistors,broadband photoresponse,charge transport,F16CuPc nanoflakes
更新于2025-09-11 14:15:04
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Piezoelectric Modulation of Broadband Photoresponse of Flexible Tellurium Nanomesh Photodetectors
摘要： Flexible photodetector shows great potential applications in intelligent wearable devices, health monitoring, and biological sensing. In this work, single crystal β-tellurium nanowires were grown on flexible muscovite by molecular beam epitaxy, constructing high-density ordered nanomesh structure. The prepared photodetectors based on tellurium nanomesh exhibit excellent mechanical flexibility, fast response in a broad range from ultraviolet to near-infrared, and good photosensitivity. We found that the flexible photodetectors with Shottky contact drastically suppressed dark current, while the response speed was lowered in comparison to the devices with ohmic contact, as holes would take long time to tunnel through the Shottky barrier between metal and p-type Te. Moreover, photoresponse of flexible Shottky photodetectors can be modulated by piezoelectricity of tellurium, and pronounced photocurrent increase after many times of bend. Under external stress, polarization charges could tune Shottky barrier height of the metal/tellurium, resulting in variation of photocurrent. The research not only explores the broadband photoresponse and piezoelectric effect of tellurium nanomesh, but also promotes the integration and development of broadband flexible optoelectronic devices.
关键词： tellurium nanomesh,piezoelectric effect,broadband photoresponse,molecular beam epitaxy,flexible photodetector
更新于2025-09-11 14:15:04