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Carrier Generation in p-Type Wide-Gap Oxide: SnNb <sub/>2</sub> O <sub/>6</sub> Foordite
摘要： Wide-gap oxides with their valence band maximum (VBM) composed of s orbitals are essential for realizing practical p-type transparent oxide semiconductors. We prepared a new p-type wide-gap oxide, SnNb2O6 foordite, with its VBM composed of Sn 5s orbitals. To discuss carrier generation, we prepared both p-type and n-type SnNb2O6 by controlling the annealing conditions. The carrier mobility and density were 3.8 × 10?1 cm2 V?1 s?1 and 3.7 × 1018 cm?3, respectively, for the p-type sample and 9.9 cm2 V?1 s?1 and 7.5 × 1015 cm?3, respectively, for the n-type sample. The crystal structure of SnNb2O6 foordite consists of two types of alternating layers, Sn and Nb2O6 octahedra, where three nonequivalent oxygen sites exist. Six oxygens in the chemical formula of SnNb2O6 are distributed at the three sites in pairs, where the oxygens in three nonequivalent sites were named O1?O3. Hole and electron carriers were considered to be generated by Sn4+-on-Nb5+ substitutional defects (SnNb??) and oxygen vacancies of O1 and O2 that are not bonded to Sn (VO1/O2′), respectively. Therefore, we concluded that it is essential to control SnNb?? and VO1/O2′ to control the semiconducting properties such as the carrier type and carrier density.
关键词： wide-gap oxides,carrier generation,SnNb2O6 foordite,annealing conditions,p-type transparent oxide semiconductors
更新于2025-09-23 15:21:01
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Nonequilibrium Green’s function method: Büttiker probes for carrier generation and recombination
摘要： The non-equilibrium Green function (NEGF) method is capable of nanodevice performance predictions including coherent and incoherent effects. To treat incoherent scattering, carrier generation and recombination is computationally very expensive. In this work, the numerically efficient B¨uttiker-probe model is expanded to cover recombination and generation effects in addition to various incoherent scattering processes. The capability of the new method to predict nanodevices is exemplified with quantum well III-N light-emitting diodes and anti-ambipolar 2D material heterojunctions.
关键词： B¨uttiker-probe model,non-equilibrium Green function,carrier generation,nanodevices,recombination
更新于2025-09-23 15:19:57
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Electrocatalytic glycerol oxidation enabled by surface plasmon polariton-induced hot carriers in Kretschmann configuration
摘要： Plasmonic hot carrier generation has attracted increasing attention due to its ability to convert light to electrical energy. The generation of plasmon-induced hot carriers can be achieved via Landau damping in the non-radiative decay process of the plasmonic excitation energy. Localized surface plasmons (LSPs) undergo both radiative and non-radiative decays, while surface plasmon polaritons (SPPs) dissipate only via the non-radiative decay. Thus, it is a challenging task to exploit the surface plasmon polaritons for the efficient generation of hot carriers and their applications. In this study, a model hot-carrier-mediated electrocatalytic conversion system was demonstrated using an Au thin film in Kretschmann configuration, which is the representative platform to excite SPPs. AgPt-decorated Au nanobipyramids (AuNBPs) were designed and introduced onto the Au film, creating hot-spots to revolutionize the thin film-based photon-to-carrier conversion efficiency. The glycerol electro-oxidation reaction enabled by such SPP-induced hot carriers was evaluated and exhibited a photon-to-hot carrier conversion efficiency of 2.4 × 10?3%, which is ～2.5 times enhanced as compared to the efficiency based on the neat Au film.
关键词： Electrocatalytic glycerol oxidation,Surface plasmon polaritons,Au nanobipyramids,Plasmonic hot carrier generation,Kretschmann configuration
更新于2025-09-16 10:30:52
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Infrared plasmonic photodetectors: the emergence of high photon yield toroidal metadevices
摘要： Plasmon excitations in metallic nanostructures can decay directly into dynamic electronehole pairs, exploitable for photocurrent generation. This approach has extensively been employed to develop nanoplasmonic light-sensing devices with signi?cant responsivity and quantum ef?ciency. Among the devices, infrared plasmonic photodetectors have gained particular interest for their wide range of technological applications, including spectroscopy, biosensing, and surveillance. This Review discusses the fundamentals, recent advances, and trending mechanisms in the understanding and applications of plasmon-enhanced photocurrent generation in nanostructures across the infrared spectrum. By highlighting and comparing the developed techniques, we demonstrate the newly introduced directions toward achieving high photon yield infrared plasmonic photodetection tools. As a promising concept in modern metaphotonics, we present the emergence of toroidal meta-atoms as plasmon-induced carrier generators with unconventionally exquisite properties for designing advanced, rapid, and next-generation plasmonic photodetectors with signi?cantly high responsivity and photocurrent.
关键词： Photocurrent,Plasmonics,Infrared photodetectors,Plasmon-induced carrier generation,Toroidal photodetectors
更新于2025-09-12 10:27:22
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Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs
摘要： By studying low radiative e?ciency blue III-nitride light emitting diodes (LEDs), we ?nd that the ABC model of recombination commonly used for understanding e?ciency behavior in LEDs is insu?cient and that additional e?ects should be taken into account. We propose a modi?cation to the standard recombination model by incorporating a bimolecular nonradiative term. The modi?ed model is shown to be in much better agreement with the radiative e?ciency data and to be more consistent than the conventional model with very short carrier lifetimes measured by time-resolved photoluminescence in similar, low radiative e?ciency material. We present experimental evidence that a hot carrier-generating process is occurring within these devices, in the form of measurements of forward photocurrent under forward bias. The forward photocurrent, due to hot carrier generation in the active region, is present despite the lack of any “e?ciency droop”—the usual signature of band-to-band Auger recombination in high-quality III-nitride LEDs. Hot carrier generation in the absence of band-to-band Auger recombination implies that some other source of hot carriers exists within these low radiative e?ciency devices, such as trap-assisted Auger recombination.
关键词： hot carrier generation,III-nitride LEDs,ABC model,trap-assisted Auger recombination,radiative efficiency
更新于2025-09-12 10:27:22
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[IEEE 2018 International Conference on Computational and Characterization Techniques in Engineering & Sciences (CCTES) - Lucknow, India (2018.9.14-2018.9.15)] 2018 International Conference on Computational and Characterization Techniques in Engineering & Sciences (CCTES) - Analysis of Current Density, Absorption Coefficient for Increasing the Efficiency of Solar Cell by using GaAs as Substrate
摘要： In this paper, a mathematical modeling of graphene gated graphene GaAs Schottky Junction field effect solar cell has been conducted to obtain J-V curve which is the benchmarked of my research and the characteristics is compared by simulating layers of different semiconductor materials to obtain graphene based solar cell by using Silvaco Atlas tool. Numerical simulation of graphene based Schottky junction solar cells to identify possible future applications of graphene. Copper indium gallium diselenide. Cadmium telluride and amorphous silicon are chosen as the semiconductor bases because of their high absorption coefficient, high / tunable band gap, and the possibility for economical fabrication as compared to single crystal silicon technology.
关键词： carrier generation rate,absorption coefficient,Graphene based solar cell,energy of the photon,power density
更新于2025-09-11 14:15:04