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Characterization of CMP Slurries Using Densitometry and Refractive Index Measurements
摘要： We investigated the possibility of employing refractive index (RI) measurements for inline incoming slurry control at the point of use (POU), as an alternative to the widespread densitometry method. As such, it became necessary to determine if RI could detect smaller changes in slurry composition and, therefore, provide a tighter control. Three industrially-relevant silica-based slurries, namely, Fujimi PL-7106, Klebosol 1501-50, and CMC W7801, were characterized using both densitometry and RI measurements. Initial solutions of the three slurries were prepared and increasingly small amounts of ultrapurified water (UPW) were added to study the change in slurry properties. Results showed that both density and RI decreased linearly with the addition of water for all three slurries, with the 1501-50 being the most sensitive to water addition. A linear correlation between the two properties was found, with R2 values that exceeded 0.95 in all cases. Furthermore, the approximate limit of detection of both metrology tools was estimated based on the slope of the fitting line and resolution. When compared to densitometry, RI was found to be the far superior method for detecting smaller changes in water concentration.
关键词： semiconductor technology,slurry characterization,in-line monitoring and control,chemical mechanical planarization
更新于2025-09-23 15:22:29
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Advances in Chemical Mechanical Planarization (CMP) || Ultra low-k materials and chemical mechanical planarization (CMP)
摘要： The performance of integrated circuits (ICs) has been driven steadily higher over the past several decades by the twin engines of feature scaling and materials innovation—so much so that steady performance improvement is seen as a necessary aspect of the broader electronics industry. As each technology node shrank linear feature dimensions by around 70%, the required chip area diminished by 50%. This enabled additional features to be added to a chip while maintaining chip size. This halving of chip-size for equivalent functionality has enabled sustained cost reduction, which has been the second feature of the semiconductor industry. The IC can be divided into the transistor section and the interconnect section—each of which has contributed to the improvement in IC performance.
关键词： integrated circuits,chemical mechanical planarization,Ultra low-k materials,CMP,materials innovation,semiconductor devices,IC performance,feature scaling
更新于2025-09-10 09:29:36
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Effect of Conditioner Type and Downforce, and Pad Break-In Time, on Pad Surface Micro-Texture in Chemical Mechanical Planarization
摘要： The impact of conditioner types and downforces during pad break-in, and the resulting effects on the evolution of pad surface micro-texture was investigated. Two different conditioning discs were used with 3 possible downforces to break-in pads. Pad samples were extracted throughout the break-in process and confocal microscopy was used to analyze the samples for their surface micro-topography and pad-wafer contact. Results showed that all experimental cases resulted in similar trends of mean summit height. More importantly, each case resulted in a different evolution of summit height distribution. Comparing the two discs used, one disc was observed to be more sensitive to changes in downforce compared to the other. The differences in the behavior of the two discs is explained by the differences in cutting mechanics, which is due to the different characteristics of the two discs. Both discs generated large amounts of pad fragments, which were shown to cause pore obscuration on the pad surface. In 4 out of 5 cases, the pad surface micro-texture stabilized within 30 minutes of break-in and all cases stabilized within 60 minutes. This work demonstrated the importance of understanding how different conditioner types react to changes in downforce when breaking-in a pad.
关键词： conditioner types,downforce,pad break-in,Chemical Mechanical Planarization,pad surface micro-texture
更新于2025-09-09 09:28:46