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A New Catalyst Ti Doped CdO Thin Film for Non-Enzymatic Hydrogen Peroxide Sensor Application
摘要： A new material, Ti doped CdO (Ti: CdO) semiconductor, is firstly reported by this work for electrochemical non-enzymatic hydrogen peroxide (H2O2) sensor applications which was deposited by a simple, versatile and cost-effective chemical spray pyrolysis method on indium doped tin oxide (ITO) substrate. In the basic studies, first, the withstanding of cubic crystal phase along with worthy crystalline nature is discerned on CdO film after Ti doping, here only the preferentially orientated (200) diffraction plane shifted to (111). Subsequently, the irregular spherically shaped CdO nanoparticles (NPs) morphology changed as nearly uniform size with Ti doping is noticed with respect to thermal pyrolytic decomposition process. The existence of Ti atoms in Ti: CdO film is authentically identified and confirmed using EDX and XPS studies respectively. The absorption and emission properties of CdO and Ti: CdO films are studied and confirmed their narrow band gap nature. Importantly, the Ti: CdO film shows pronounced electrocatalytic activity for the reduction of hydrogen peroxide (H2O2) as compared to pure CdO. Hence, the non-enzymatic electrochemical sensing of Ti: CdO electrode shows a lower detection limit 0.4 μM with the linear range of 10-190 μM which displayed a fast amperometric response for 5 s with sensitivity of 0.27 μA μM-1 cm-2 toward H2O2 detection. This result will boost exploring a new opportunity for the deposition of other metal oxides and semiconductors by using a simple chemical spray pyrolysis method for detection of non-enzymatic H2O2 sensor applications.
关键词： H2O2 sensor,and selectivity,Chemical spray pyrolysis,Ti: CdO thin film
更新于2025-09-23 15:23:52
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Structural Properties of (Sn1?xMgxO) Thin Films and Optical Parameter Dependence with Gamma Ray Irradiation
摘要： Tin-Magnesium oxide (Sn1?xMgxO) thin films were prepared on glass substrates using the chemical spray pyrolysis technique, whereupon the samples were irradiated by gamma rays using a Co-60 radioactive source. X-ray diffraction showed that all prepared films were polycrystalline in nature with a tetragonal structure and a preferential growth of crystallites in the (110) plane. In general, the average crystallite size, lattice constants, dislocation density and crystallite density decreased with increasing Mg doping from 0% to 8%. Further, atomic force microscopy showed that the thin films were smooth and homogenous. The optical properties were obtained by ultraviolet–visible spectrophotometry, and the transmittance and absorbance spectra before and after gamma ray irradiation were compared for all samples, whereby the absorption and extinction coefficients and real and imaginary parts of the dielectric were studied before and after irradiation. It was found that the energy band gap values decreased from 3.94 eV to 3.72 eV with increasing Mg doping from 0% to 8% before irradiation, and from 3.92 eV to 3.59 eV after irradiation. All optical constants increased with doping percentage before and after irradiation. Energy-dispersive x-ray spectroscopy showed that all structures contained Sn and O elements in the undoped state, and contained SnO2 and Mg in the doped state.
关键词： doping,SnO2 thin films,gamma ray,energy-dispersive x-ray technology,chemical spray pyrolysis,structural properties
更新于2025-09-23 15:21:21