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Emission of dispersed-type inorganic EL devices with frequency-variable high-voltage oscillation circuit
摘要： Dispersed‐type inorganic electroluminescent (EL) devices composed of a transparent electrode, a phosphor, a dielectric, and a back electrode were prepared under various conditions using a zinc sulfide (ZnS)‐based phosphor. Additionally, a voltage/frequency variable circuit was designed. A compact high‐voltage/frequency variable circuit including three modules for boosting, frequency conversion, and voltage conversion was designed. A 140 Vpp voltage and a frequency in the range of 270 Hz to 2.4 kHz can be controlled by this circuit. The emission has begun to be observed at a voltage about 60 Vpp and a frequency of 400 Hz, at a voltage about 40 Vpp and a frequency of 1.4 kHz, 2.4 kHz, respectively. The emission intensity increased with an increase in frequency; emission with a wavelength of 450 nm was strongly influenced by the frequency. The luminescence and the electrical properties were affected by the preparation conditions including device structures, dispersion of ZnS:Cu, and Cl particles because of the current path generated by defects in the EL cell.
关键词： inorganic,organic dye,electroluminescence,ZnS:Cu,Cl,oscillation circuit,driver circuit
更新于2025-09-23 15:22:29
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[IEEE 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Chengdu, China (2018.5.7-2018.5.11)] 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - A 300GHz Monolithic Integrated Amplifier in 0.5-μm InP Double Heterojunction Bipolar Transistor Technology
摘要： We present a compact, 6-stage terahertz monolithic integrated circuit (TMIC) amplifier with an operating frequency of 275-310GHz, formed by common-base configured 0.5 um InP Double Heterojunction Bipolar Transistor (DHBT) and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier small signal gain exhibits >7.4dB at 300GHz. The peak gain is 12.5dB at 280GHz. This is the first time reported InP DHBT TMIC amplifier operating in H-band employing TFM in china. The total size of this 6-stage amplifier is only 1.7 mm ╳0.9 mm.
关键词： thin-film microstrip (TFM),Indium phosphide (InP),H-band,Amplifier,Heterojunction bipolar transistors (HBTs),Terahertz monolithic integrated circuit (TMIC)
更新于2025-09-23 15:22:29
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Silver Nanowires Inks for Flexible Circuit on Photographic Paper Substrate
摘要： Silver nanowires (AgNWs) have inspired many research interests due to their better properties in optical, electric, and flexible applications. One such exploitable use is as the electrical conductive fillers for print electronics. In this paper, AgNWs with mean a diameter of 80 nm and mean length of 13.49 μm were synthesized using the polyol solvothermal method. A sonication-induced scission process was used to obtain AgNWs with a length range of 7.64–11.21 μm. Further AgNWs inks were prepared with the as-synthesized AgNWs as conductive fillers in anhydrous ethanol. The conductive inks were coated on resin coated photographic paper substrate using the knife coating process and dried at room temperature. The effects of the number of layers of AgNWs coating, the concentration of AgNWs, and the length of AgNWs on the microstructure and electrical properties of samples were investigated by scanning electron microscopy and using the four-point probe method. The results show that the conductivity of the AgNWs coating increases with the increase in the number of layers in the AgNWs coating, concentration and length of the AgNWs.
关键词： sheet resistance,silver nanowires inks,flexible circuit,photographic paper
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) - Tallinn, Estonia (2018.10.30-2018.10.31)] 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) - Application Specific Integrated Gate-Drive Circuit for Driving Self-Oscillating Gallium Nitride & Logic-Level Power Transistors
摘要： Wide bandgap power semiconductors are key enablers for increasing the power density of switch-mode power supplies. However, they require new gate drive technologies. This paper examines and characterizes a fabricated gate-driver in a class-E resonant inverter. The gate-driver’s total area of 1.2 mm2 includes two high-voltage transistors for gate-driving, integrated complementary metal-oxide-semiconductor (CMOS) gate-drivers, high-speed floating level-shifter and reset circuitry. A prototype printed circuit board (PCB) was designed to assess the implications of an electrostatic discharge (ESD) diode, its parasitic capacitance and package bondwire connections. The parasitic capacitance was estimated using its discharge time from an initial voltage and the capacitance is 56.7 pF. Both bondwires and the diode’s parasitic capacitance is neglegible. The gate-driver’s functional behaviour is validated using a parallel LC resonant tank resembling a self-oscillating gate-drive. Measurements and simulations show the ESD diode clamps the output voltage to a minimum of ?2 V.
关键词： Self-oscillating,Analog integrated circuit,gate-driver,ASIC
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE Power & Energy Society General Meeting (PESGM) - Portland, OR, USA (2018.8.5-2018.8.10)] 2018 IEEE Power & Energy Society General Meeting (PESGM) - Increasing Feeder PV Hosting Capacity by Regulating Secondary Circuit Voltages
摘要： Voltage rise is one of the major concerns that limits the photovoltaic (PV) hosting capacity or the maximum amount of PV generation that a distribution circuit can accommodate. This paper examines the effectiveness of low-voltage distribution static compensators (LV-DSTATCOMs) in increasing the PV hosting capacity of distribution circuits by mitigating voltage rise. Stochastic analysis framework is used to determine the PV hosting capacity while an iterative placement technique is used to identify effective device locations. To provide insights on the optimal device size, number, and control settings, sensitivity analysis is carried out. The results show that, with appropriate size and control settings, installation of few LV-DSTATCOMs in a distribution circuit can significantly increase its PV hosting capacity. For the circuit under consideration, a set of 23 devices has increased the PV hosting capacity from 15% to 100% of the median day time peak load.
关键词： Distribution circuit,Photovoltaics,FACTS device,Overvoltage,DSTATCOM
更新于2025-09-23 15:22:29
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Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs
摘要： This paper presents the impact of a short-circuit event on the gate reliability in planar SiC MOSFETs, which becomes more critical with increased junction temperature and higher bias voltages. The electrical waveforms indicate that a gate degradation mechanism takes place, showing a large gate leakage current that increases as the gate degrades more and more. A failure analysis has been performed on the degraded SiC MOSFET and then compared to the structure of a new device to identify possible defects/abnormalities. A Focused-Ion Beam cut is performed showing a number of differences in comparison to the new device: (i) cracks between the poly-silicon gate and aluminium source, (ii) metal particles near the source contact, and (iii) alterations in the top surface of the aluminium source. The defects have been correlated with the increase in gate-leakage current and drain-leakage current.
关键词： Focused-Ion Beam,Short circuit,Gate-oxide breakdown,Gate oxide,Degradation,Defects,Reliability,SiC MOSFET,Failure analysis,SEM
更新于2025-09-23 15:22:29
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[IEEE 2018 2nd IEEE Conference on Energy Internet and Energy System Integration (EI2) - Beijing, China (2018.10.20-2018.10.22)] 2018 2nd IEEE Conference on Energy Internet and Energy System Integration (EI2) - Design of PFC in Wireless Charging System for Electric Vehicle
摘要： A power factor correction (PFC) circuit is constructed, based on average period compensation method(APCM) in this paper. The cut-off frequency 2kHz and 10Hz are closed for current loop and voltage loop, and the phase margin of each loop is 80 degrees. By contrasting the THD of fundamental wave calculated to the 40th and the peak value of voltage ripple wave, PI values and transfer functions of both current loop and voltage loop are got. Then the input current and output voltage in PFC steady operation are simulated, and results are in accord with the small-signal model. In Simulink, the output capacitance is charged in advance and saturation controller is adopted, by which the overshoot of output voltage decreases by 6.3%, and the THD of input current is only 3.76%, which meet the demands for power-factor correction in wireless charging system for EV.
关键词： Average Period Compensation Method,Active PFC Circuit,Wireless Charging Technology
更新于2025-09-23 15:22:29
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[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao, China (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Design of Power Clamp Circuit with Diode String and Feedback Enhanced Triggering in advanced SOI BCD Process
摘要： A novel power clamp circuit is proposed in this paper. By utilizing the feedback technology, BigFET turning on time is increased to 591ns which is 7 times as long as the traditional one. The layout area is efficiently occupied in the novel power clamp circuit which replaces the detective capacitor by a diode string. The proposed circuit has low leakage current and significant ESD performance validated in a 0.18μm SOI BCD process.
关键词： BigFET,power clamp circuit,feedback technology,Electrostatic discharge (ESD)
更新于2025-09-23 15:22:29
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PV-Aware Analog Sizing for Robust Analog Layout Retargeting with Optical Proximity Correction
摘要： For analog integrated circuits (ICs) in nanometer technology nodes, process variation (PV) induced by lithography may not only cause serious wafer pattern distortion, but also result in device mismatch, which can readily ruin circuit performance. Although the conventional optical proximity correction (OPC) operations can effectively improve the wafer image fidelity, an analog circuit without robust device sizes is still highly vulnerable to such a mismatch effect. In this article, a PV-aware sizing-inclusive analog layout retargeting framework, which encloses an efficient hybrid OPC scheme for yield enhancement, is proposed. The device sizes are tuned during the layout retargeting process by using a deterministic circuit-sizing algorithm considering PV conditions. Our hybrid OPC method combines global rule-based OPC with local model-based OPC functions to boost the wafer image quality improvement but without degrading the computational efficiency. The experimental results show that our proposed framework can achieve the best wafer image quality and circuit performance preservation compared to any other alternative approaches.
关键词： analog layout retargeting,hybrid OPC,Deterministic circuit sizing,process variation,optical proximity correction
更新于2025-09-23 15:22:29
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Application of Aerosol Jet 3D Printing with Conductive and Non-Conductive Inks for Manufacturing mm-Wave Circuits
摘要： In this paper, an application of Aerosol Jet 3D printing with conductive and non-conductive inks for the realization of mm-wave circuits well above 30 GHz is presented and investigated. The Optomec 5X aerosol jet 3D printing system is used together with polyimide and silver inks to fully-additive manufacture various microstrip circuits. A section of microstrip transmission line with a transition to a via-less conductor backed coplanar waveguide was designed together with a T-junction and a branch-line coupler. These circuits were designed to operate within the Ka and V frequency bands. The measured thickness of the polyimide dielectric substrate is 20.7 ± 1.35 μm while the silver traces are 2.6 ± 1.35 μm. A section of the transmission line with the developed transitions was measured up to the W-band, exhibiting a total loss of 0.65 dB/mm at 100 GHz. The T-junction power divider yielded a total loss at its center frequency of 34 GHz of 0.55 dB. The 3-dB branch line coupler yielded a loss at its center frequency at 42 GHz of 1.1 dB. The experimental results demonstrate the application of this approach for fast and high-resolution mm-wave circuit fabrication.
关键词： circuit fabrication,additive manufacturing,mm-wave circuits,aerosol jet printing,3D printing
更新于2025-09-23 15:22:29