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Enhancing electrostatic coupling in silicon quantum dot array by dual gate oxide thickness for large-scale integration
摘要： We propose a structure with word/bit line control for a two-dimensional quantum dot array, which allows random access for arbitrary quantum dots with a small number of control signals. To control multiple quantum dots with a single signal, every quantum dot should have a wide operating voltage allowance to overcome the property variations. We fabricate two-dimensional quantum dot arrays using silicon-complementary-metal-oxide-semiconductor technology with an alternating dual-standard gate oxide thickness. The quantum dots are designed to have an allowable operating voltage window of 0.2 V to control the number of electrons, which is a window one order of magnitude wider than that of previous works. The proposed structure enables both easy fabrication and operation for multiple quantum dots and will pave the way for practical use of large-scale quantum computers.
关键词： electrostatic coupling,dual gate oxide thickness,quantum dot array,large-scale integration,silicon-complementary-metal-oxide-semiconductor technology
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - High-Speed Germanium Pin Photodiodes Integrated on Silicon-on-Insulator Nanophotonic Waveguides
摘要： Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of -13.9, -12.7, and -11.3 dBm.
关键词： silicon-on-insulator,complementary metal-oxide-semiconductor technology,silicon nanophotonics,germanium,optical photodetectors
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - High-Speed Germanium Pin Photodiodes Integrated on Silicon-on-Insulator Nanophotonic Waveguides
摘要： Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of -13.9, -12.7, and -11.3 dBm.
关键词： silicon nanophotonics,optical photodetectors,complementary metal-oxide-semiconductor technology,germanium,silicon-on-insulator
更新于2025-09-16 10:30:52