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Influence of backsheet materials on potential-induced degradation in n-type crystalline-silicon photovoltaic cell modules
摘要： We investigated the influence of backsheet materials on potential-induced degradation (PID) in n-type crystalline-silicon (c-Si) photovoltaic (PV) cell modules. Silicon heterojunction PV cell modules and rear-emitter n-type c-Si PV cell modules were fabricated by using aluminum backsheets composed of poly ethylene terephthalate (PET)/aluminum/PET as well as typical backsheets. PID tests of the modules were performed by applying a negative bias in a dry environment (<2% relative humidity). Regardless of the types of cells, the modules with the aluminum backsheets showed smaller degradation. This indicates that aluminum backsheets reduce PID effects, and to alter backsheets may be a potential measure to reduce PID.
关键词： n-type crystalline-silicon,potential-induced degradation,backsheet materials,photovoltaic modules
更新于2025-09-11 14:15:04
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A DLTS Perspective on Electrically Active Defects in Plated Crystalline Silicon n <sup>+</sup> p Solar Cells
摘要： Laser ablation (LA) has been compared with standard wet etching for contact opening in crystalline silicon n+p solar cells, from a perspective of electrically active defects, assessed by Deep-Level Transient Spectroscopy (DLTS). Copper metallization is employed, including a plated nickel diffusion barrier. It is shown that a hole trap around 0.17 eV above the valence band is systematically present in the depletion region of the junctions, irrespective of the contact opening method. This level could correspond with the substitutional nickel donor level in silicon and indicates that Ni in-diffusion occurs during the contact processing. No clear evidence for the presence of electrically active copper has been found. In addition, two other hole traps H2 and H3, belonging to point defects, have been observed after wet etching and standard LA, while for the highest laser power (hard LA) a broad band develops around 175 K, which is believed to be associated with dislocations, penetrating the p-type base region. Evidence will also be given for the impurity decoration of the dislocations, which enhances their electrical activity.
关键词： Deep-Level Transient Spectroscopy (DLTS),copper metallization,electrically active defects,laser ablation,nickel diffusion barrier,wet etching,crystalline silicon n+p solar cells
更新于2025-09-11 14:15:04
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[IEEE 2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems (ICPEICES) - Delhi, India (2018.10.22-2018.10.24)] 2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems (ICPEICES) - Development of a Characterization Tool for Determination of Sheet Resistance at 9 Places of Large Area 156 mm by 156 mm Diffused Silicon Wafer in Less than 5 Seconds and Its Application in Making High Efficiency Silicon Solar Cells
摘要： Sheet resistance measurement using 4 probe method is a very well established technique for measuring the sheet resistance of a thin film on a substrate. This technique is widely used to measure the sheet resistance of diffused silicon wafer in solar photovoltaic industry. However with respect to solar cell industry, the drawback associated with this technique is, it measures the sheet resistance of a very small area. For a large area silicon wafer of size 156 mm by 156 mm, a four probe sheet resistance measurement instrument will take several minutes to take readings at several places on the entire area of the wafer. In the present work a solar cell characterization tool is developed for measuring the sheet resistance at 9 places on a diffused silicon wafer using 9 four probe heads mounted on a single plate. The characterization tool developed in the present work can tell the uniformity of diffusion in a diffused silicon wafer within few seconds on the screen of a computer monitor. Continuous data logging helps in characterizing wafers which are >50,000/day in any smallest PV industry.
关键词： Sheet Resistance,crystalline silicon solar cell,Four probe technique,Shallow emitter
更新于2025-09-11 14:15:04
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Research on the Gas Effect of Octafluorocyclobutane Plasma Jet at Atmospheric Pressure for Silicon Etching
摘要： The capacitively coupled radio frequency double-pipe plasma discharge jet is used for the etching process. An argon carrier gas is fed through the atmospheric-pressure plasma source; octafluorocyclobutane (C4F8) etch gas is injected into the plasma. Etchings were carried out on a crystalline silicon substrate. The etching characteristics are discussed and the etch rate tendency shows the reliance of C4F8 gas flow rate and oxygen addition. The optimum etching rate of 7.2 μm/min was obtained at a plasma power level of 100 W and C4F8 gas flow rate was 250 sccm. From surface profile detection, it displays the etch profile under this atmospheric-pressure plasma jet treatment. This plasma technique could offer a breakthrough for chamber-free dry etching processing.
关键词： plasma etching,Atmospheric-pressure plasma,octafluorocyclobutane,crystalline silicon
更新于2025-09-04 15:30:14