- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
[IEEE 2018 IEEE 2nd International Conference on Dielectrics (ICD) - Budapest (2018.7.1-2018.7.5)] 2018 IEEE 2nd International Conference on Dielectrics (ICD) - An original in-situ way to build field grading materials (FGM) with permittivity gradient using electrophoresis
摘要： This paper reports on an original method developed at LAPLACE to structure field grading materials (FGM) by local handling of high permittivity ceramic (SrTiO3) particles in an epoxy resin using electrophoresis (i.e. DC voltage application). This new way of structuring composites allows building FGM with a high permittivity region (region with high particle concentration) while the rest of the composite remains with low particle concentration). The resin curing enables to ‘freeze’ the particles with this spatial arrangement. Process details and dielectric characterization of each region of the FGM composites are reported. Finally, a clear demonstration of the FGM performances, used as a field grading encapsulation material for high voltage power electronics modules, is shown supported both by field repartition simulation and experimental breakdown voltage improvements of encapsulated direct bonded copper (DBC) substrates.
关键词： SrTiO3,Encapsulation,Epoxy,Permittivity,Composites,Power modules,Field grading,FGM,Power electronics,Functionally graded materials,Electrophoresis
更新于2025-09-04 15:30:14
-
Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering
摘要： Few-layer Black phosphorus (BP) has recently emerged as a promising two-dimensional (2D) material for electronic and optoelectronic devices due to its high mobility and tunable bandgap. However, BP is known to have quick degradation and oxidize in ambient conditions by breaking of the P-P bonds. As a result, there is a growing need to encapsulate BP that avoids oxygen and water while retaining the high electric performance of the devices. Here we demonstrate a hydrophobic polymer encapsulation technique with improved thermal conductivity for high current density, which preserves the electrical properties of BP back-gate transistors compared to the commonly used Al2O3 encapsulation with improved mobility and minimal traps. The on-off ratio increases for more than an order of magnitude at room temperature and more than four orders of magnitude at cryogenic temperatures. High field transport shows the first systematic study on unprecedented breakdown characteristics up to -5.5 V for the 0.16 μm transistors with a high current of 1.2 mA/μm at 20 K. These discoveries open up a new way to achieve high-performance 2D semiconductors with significantly improved breakdown voltage, on-off ratios, and stability under ambient conditions for practical applications in electronic and optoelectronic devices.
关键词： encapsulation,polymer,Black phosphorus,high-field transport,field-effect transistors,breakdown voltage,reliability
更新于2025-09-04 15:30:14