- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Manipulation and Deposition of Complex, Functional Block Copolymer Nanostructures using Optical Tweezers
摘要： Block copolymer self-assembly has enabled the creation of a range of solution-phase nanostructures with applications from optoelectronics and biomedicine to catalysis. However, to incorporate such materials into devices a method that facilitates their precise manipulation and deposition is desirable. Herein we describe how optical tweezers can be used to trap, manipulate, and pattern individual cylindrical micelles and larger hybrid micellar materials. Through the combination of TIRF imaging and optical trapping we can precisely control the three-dimensional motion of individual cylindrical block copolymer micelles in solution, enabling the creation of customizable arrays. We also demonstrate that dynamic holographic assembly enables the creation of ordered customizable arrays of complex hybrid block copolymer structures. By creating a program which automatically identifies, traps and then deposits multiple assemblies simultaneously we have been able to dramatically speed up this normally slow process, enabling the fabrication of arrays of hybrid structures containing hundreds of assemblies in minutes rather than hours.
关键词： optical trapping,directed assembly,block copolymers,self-assembly,nanofibers
更新于2025-11-21 11:24:58
-
[IEEE 2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM) - Cuenca, Ecuador (2018.10.15-2018.10.19)] 2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM) - Reliability in GaN-based devices for power applications
摘要： This paper analyzes two important reliability issues in AlGaN/GaN devices: positive bias temperature instability (PBTI) and time-dependent dielectric breakdown (TDDB). The summarized results of our previous PBTI studies in MOS-HEMTs show that the threshold voltage degradation in devices with SiO2 as gate dielectric is characterized by a universal decreasing behavior of the trapping rate parameter and is ascribed to charge trapping in the SiO2 and at the SiO2/GaN interface. On the contrary, the degradation observed in Al2O3- and AlN/Al2O3-gate stacks is mainly attributed to charge capture in the pre-existing dielectric traps with a negligible interface state generation. Additionally, the insertion of a thin AlN layer impacts on the device reliability because larger trap density, faster charge trapping, wider trap energy distribution and slower charge release are observed compared with devices without this layer. The dielectric importance of GaN-based devices has been also investigated in Schottky Barrier Diodes (SBDs) with a gated edge termination (GET). Our recent TDDB results indicate a narrower Weibull distribution, and a longer time to failure in devices with a double GET layer structure and with a thick passivation layer (2 GET-THICK) than in single GET devices with a thin passivation (1 GET-THIN). Therefore, the former structure is more suitable for high-power and high-temperature applications.
关键词： TDDB,AlGaN/GaN SBD,trapping,de-trapping,reliability,PBTI,breakdown voltage,GET,MOS-HEMT
更新于2025-09-23 15:23:52
-
Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry
摘要： Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.
关键词： cylindrical geometry,compound semiconductors,energy resolution,charge carriers trapping,charge induction
更新于2025-09-23 15:23:52
-
[IEEE 2017 IEEE International Integrated Reliability Workshop (IIRW) - Fallen Leaf Lake, CA (2017.10.8-2017.10.12)] 2017 IEEE International Integrated Reliability Workshop (IIRW) - Silicon dioxide degradation in strongly non-uniform electric field
摘要： The new experimental evidence of field-induced trap generation in the tunnel oxide of SuperFlash? memory cells has been presented. It was shown that the negative voltage stress generates the highest local electric field in the oxide close to the floating gate tip. The effect of electric stress on the degradation of tunneling characteristics has been studied for the cells with the different tunneling geometry. The reliability aspects of field-induced trap generation are discussed. It has been concluded that the analyzed degradation mechanism is not critical for the SuperFlash technology.
关键词： floating gate,program-erase cycling endurance,memory reliability,oxide degradation,electron tunneling,Flash memory,electron trapping
更新于2025-09-23 15:23:52
-
Field-squeeze operators via coherent population trapping
摘要： We present a scheme to generate unitarily two-mode and four-mode ?eld squeezing in optical cavities with the near-resonantly dressed three-level atoms in the (cid:2) con?guration. The dressing ?elds open two coherent population trapping (CPT) windows, within which the atoms stay predominantly in the dark state and yield strong nonlinearities for both the dressing ?elds themselves and the other applied ?elds. The two-mode squeeze operator is separated from degrees of freedom of atoms in a common CPT window, and the multimode squeeze operator is segregated in different CPT windows. The resulting two-mode and multimode interaction strengths are at least one order higher than in the previous dispersive schemes, where all ?elds are far off resonant with the atoms. The present near-resonant scheme is robust to spontaneous emission since atoms are nearly trapped in a long-lived superposition state.
关键词： field squeezing,coherent population trapping,optical cavities,quantum optics,three-level atoms
更新于2025-09-23 15:23:52
-
Self-trapping and ordering of heavy holes in the wide band-gap semiconductor
摘要： Scanning tunneling microscopy (STM) has been utilized for imaging and manipulation of self-trapped holes on the surface of the wide band-gap semiconductor β-Ga2O3. A positively charged surface layer comprised of localized holes with 1013 cm?2 density has been observed for n-doped samples. We show that the surface layer can be populated by hole pumping from the STM tip. A transition between the glassy phase and ordered striped phase of self-trapped holes has also been observed. Our analysis indicates that the saturated two-dimensional density of self-trapped holes may be determined by balance of self-trapping and Coulomb repulsion energies.
关键词： β-Ga2O3,scanning tunneling microscopy,self-trapping,heavy holes,charge ordering,Wigner-Mott regime
更新于2025-09-23 15:23:52
-
Effect of Er3+-doping on 65GeS2-25Ga2S3-10CsCl glass probed by annihilating positrons
摘要： Effect of Er3+-doping resulting in pronounced mid-IR fluorescence functionality was examined first in chalcohalide 65GeS2-25Ga2S3-10CsCl glass using positron annihilation lifetime (PAL) spectroscopy. The detected PAL spectra were reconstructed from unconstrained x2-term analysis employing two-state simple trapping model for one kind of positron trapping free-volume defects, the parameterization being performed at the example of 65GeS2-25Ga2S3-10CsCl glass doped with 0.6 at. % of Er3+. The observed decrease in positron trapping rate was proved to be primary void-evolution process in this Er-activated glass, like in many other chalcogenide glasses affected by rare earth doping. The nature of this effect was explained in terms of positron trapping reduction model as competitive contribution of changed occupancy sites in Ga-modified glassy matrix available for rare earth ions and annihilating positrons.
关键词： Chalcohalide glass,Positron trapping reduction,Rare earth doping,Photoluminescence
更新于2025-09-23 15:23:52
-
Controlling the Dynamics and Optical Binding of Nanoparticle Homodimers with Transverse Phase Gradients
摘要： While transverse phase gradients enable studies of driven nonequilibrium phenomena in optical trapping, the behavior of electrodynamically interacting particles in a transverse phase gradient has not been explored in detail. In this Letter we study electrodynamically interacting pairs of identical nanoparticles (homodimers) in transverse phase gradients. We establish that the net driving force on homodimers is modulated by a separation-dependent interference effect for small phase gradients. By contrast, large phase gradients break the symmetry of the interaction between particles and profoundly change the electrodynamic interparticle energy landscape. Our findings are particularly important for understanding multiparticle dynamics during the self-assembly and rearrangement of optical matter.
关键词： nonequilibrium,optical trapping,optical microscopy
更新于2025-09-23 15:23:52
-
The Investigation of WGM Effective Potential from Micro PANDA Ring Resonator
摘要： In this work, the whispering gallery mode effective potential generated by micro PANDA ring resonator for a two level system of atom–electric field coupling is investigated and presented. The depth of trapping potential is proportional to electric intensity and damping rate of transition of dipole polarization. The trial harmonics potential well is established by using dipole potential under ac Stark effect. The optimum intensity and lifetime for each WGM trapping wavelengths under the effect of thermal noise is reported.
关键词： optical tweezers,Trapping potential,atomic qubit
更新于2025-09-23 15:23:52
-
Trapped charge modulation at the MoS2/SiO2 interface by lateral electric field in MoS2 field-effect transistors
摘要： Controlling trapped charges at the interface between a two-dimensional (2D) material and SiO2 is crucial for the stable electrical characteristics in field-effect transistors (FETs). Typically, gate-source bias has been used to modulate the charge trapping process with a narrow dielectric layer with a high gate electric field. Here, we observed that charge trapping can also be affected by the lateral drain-source voltage (VDS) in the FET structure, as well as by the gate-source bias. Through multiple VDS sweeps with increasing measurement VDS range, we demonstrated that the charge trapping process could be modulated by the range of the applied lateral electric field. Moreover, we inserted hexagonal boron nitride (h-BN) layer between the MoS2 and SiO2 layer to explore the charge trapping behavior when a better interface is formed. This study provides a deeper understanding of controlling the electrical characteristics with interface-trapped carriers and lateral electrical fields in 2D materials-based transistors.
关键词： charge trapping,high electric fields,MoS2,field-effect transistors
更新于2025-09-23 15:23:52