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Status of the CALDER project: Cryogenic light detectors for background suppression
摘要： The development of large area cryogenic light detectors is one of the priorities of next generation bolometric experiments searching for neutrinoless double beta decay. The simultaneous read-out of the heat and light signals enables particle identification, provided that the energy resolution and the light collection are sufficiently high. CALDER (Cryogenic wide-Area Light Detectors with Excellent Resolution) is developing phonon-mediated silicon light detectors using KIDs, with the goal of sensing an area of 5 × 5 cm2 with a resolution of 20 eV RMS. We present the latest results obtained with aluminum chips and with newly developed multi-layer titanium–aluminum chips featuring a remarkable sensitivity.
关键词： Superconducting device,Kinetic inductance detectors,Rare events searches,Phonon-mediated light detectors
更新于2025-09-23 15:23:52
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Investigating flexible band-stop metamaterial filter over THz
摘要： Metamaterial filter is a novel type of photoelectric device. In this study, a triple-band band-stop filter for terahertz is fabricated by magnetron sputtering of periodic metamaterial resonators on flexible polyimide substrates. The band-stop resonant points of the filter are 107.3, 167.45, and 209.9 GHz, and the 3 dB bandwidths are 14.13, 14.03, and 22.44 GHz. S21 parameters at the resonance point reach ?30.217, ?30.432, and ?38.618 dB, thereby possibly achieving an excellent frequency blocking performance. Simultaneously, the stop-band can be adjusted by controlling the length of the metamaterial unit size, thus modifying the frequency of the filter.
关键词： Terahertz wave,Photoelectric device,Band-stop filter,Metamaterials
更新于2025-09-23 15:23:52
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[IEEE 2018 XIV International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE) - Novosibirsk, Russia (2018.10.2-2018.10.6)] 2018 XIV International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE) - Universal Control System of a Semiconductor Electric Energy Converter on Programmable Logic Devises
摘要： The article presents the results of the development of a universal control system for semiconductor power converters based on a programmable logic devices (PLD). As a result of the work done, shared functional modules for the various control systems of semiconductor converters were determined, the features of implementing modules on programmable logic were considered, and the algorithms for controlling converters on mathematical models were studied. The principal circuit diagram of the universal control system of the converter is synthesized on the basis of a combination of programmable logic devises and a microcontroller. The topologies of printed circuit boards and their layout in a single module of the universal control system of the converter are developed; the built-in microcontroller software was written and debugged in the assembler language. An experimental sample of the control system was made and its joint tests with a prototype of a low-power three-phase inverter equipped with a load simulator were carried out, oscillograms of control pulses and output voltage were obtained in various modes of inverter control.
关键词： digital control system,programmable logic device,algorithm,semiconductor power converter,model
更新于2025-09-23 15:23:52
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Piezoluminescent devices by designing array structures
摘要： Mechanoluminescence has attracted increasing attentions because it can convert the kinetic energy during human daily motions into light to be used in sensors and displays. However, its practical applications are still hindered by the weak brightness and limited color while under large forces. Herein, we developed novel piezoluminescent devices (PLDs) which could effectively emit visible light under low pressing forces through the stress-concentration and enhancing deformation on the basis of carefully-designed array structures. The emitting colors were also tunable by using bilayer luminescent film under different pressures. This work not only provides a new strategy to effectively harvest mechanical energy into light, but also presents a scalable, low-cost and color-tunable PLD which shows great potentials in various applications such as luminescent floors, shoes and stress-activated displays.
关键词： mechanoluminescence,color-tunable,piezoluminescent device,array structure
更新于2025-09-23 15:23:52
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Highly Flexible and Transparent Memristive Devices using Cross-Stacked Oxide/Metal/Oxide Electrode Layers
摘要： Flexible and transparent memristive devices (FT-memristors) are considered to be among promising candidates for future nonvolatile memories. To realize these devices, it is essential to achieve flexible and transparent conductive electrodes (TCEs). However, conventionally-used TCEs such as indium tin oxide, gallium zinc oxide, and indium zinc oxide are not so flexible and even necessitate thermal annealing for high conductivity and optical transmittance. Here, we introduce Ag/ZnO/Ag and Ag/Al2O3/Ag-based FT memristors using cross-stacked oxide/metal/oxide electrode layers (i.e., ZnO/Ag/ZnO + ZnO/Ag/ZnO and Al2O3/Ag/Al2O3 + Al2O3/Ag/Al2O3) without using any annealing process on polyethylene terephthalate substrates (PETs). Both Ag/ZnO/Ag- and Ag/Al2O3/Ag-based FT-memristors on PETs exhibited excellent properties, including high transmittance (> 86% in the visible region), high ON/OFF current ratios (> 103), and long retention times (> 105 s). In addition, they showed very stable and flexible characteristics on PETs even after 2500 bending cycles with a bending radius of 8.1 mm. Finally, we analyzed transmission electron microscopy images and time-of-flight secondary ion mass spectroscopy profiles to identify switching mechanisms in these devices.
关键词： Al2O3/Ag/Al2O3,filament,memristive device,Transparent and flexible electrode,ZnO/Ag/ZnO
更新于2025-09-23 15:23:52
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Simulation-Based Sensitivity Analysis of Conduction and Switching Losses for Silicon Carbide Power MOSFETs
摘要： The behavior of silicon carbide power MOSFETs is analyzed using TCAD device simulations with respect to conduction and switching losses. Device designs with varying breakdown voltages are simulated. The contributions to the on-state resistance are shown at room and elevated temperature. Whereas channel and substrate resistance dominate at low breakdown voltages, drift and JFET resistance dominate at high breakdown voltages. With increasing temperature, the channel resistance decreases and thus the drift resistance is the main contributor already at medium breakdown voltages. Manufacturing processes of a device can have a high influence on its losses. Variations in interface mobility, drift doping, and p-body doping can lead to a significant change of on-resistance, internal capacitances, and reverse recovery charge. For higher voltage classes the drift layer properties should be of major interest as it influences on-resistance and reverse recovery charge.
关键词： SiC power MOSFET,TCAD device simulation,sensitivity analysis,losses
更新于2025-09-23 15:23:52
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La-doped p-type ZnO nanowire with enhanced piezoelectric performance for flexible nanogenerators
摘要： In recent years, energy harvesting has attracted considerable attention as a promising method to convert waste energy to useful energy. In particular, piezoelectric energy harvesters are of significant interest, because they have a simple structure and can be used to harvest energy regardless of weather or other environmental conditions. In accordance with the miniaturization trend of electronic devices driven by low power, piezoelectric nanogenerators (PENGs) using various nanostructured materials are being developed. Among them, ZnO nanowires (NWs) are most widely used for the use of PENGs. However, while research on n-type ZnO NWs is extensive, studies on p-type ZnO NWs are insufficient owing to their poor stability. In this study, La-doped p-type ZnO (La:ZnO) NWs were synthesized by a hydrothermal method to expand the applications of p-type ZnO and determine their potential as PENGs. XRD analysis showed that La3+ ions was well doped without the formation of any secondary phases and caused a change in the lattice parameter when compared to that of undoped ZnO. XPS analysis was performed to investigate the surface elemental compositions of La:ZnO NWs, and the morphology of La:ZnO NWs was investigated using SEM and TEM. We further studied the piezoelectric output performance of undoped and La-doped ZnO NWs, and found that La:ZnO NWs showed improved piezoelectric output performance as a result of electron screening effect of the p-type semiconductor.
关键词： p-type ZnO,La-doping,Flexible device,ZnO nanowires,Nanogenerators
更新于2025-09-23 15:23:52
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Solution-Processable ZnO Thin Film Memristive Device for Resistive Random Access Memory Application
摘要： The memristive device is a fourth fundamental circuit element with inherent memory, nonlinearity, and passivity properties. Herein, we report on a cost-effective and rapidly produced ZnO thin film memristive device using the doctor blade method. The active layer of the developed device (ZnO) was composed of compact microrods. Furthermore, ZnO microrods were well spread horizontally and covered the entire surface of the fluorine-doped tin oxide substrate. X-ray diffraction (XRD) results confirmed that the synthesized ZnO was oriented along the c-axis and possessed a hexagonal crystal structure. The device showed bipolar resistive switching characteristics and required a very low resistive switching voltage (±0.8 V) for its operation. Two distinct and well-resolved resistance states with a remarkable 103 memory window were achieved at 0.2-V read voltage. The developed device switched successfully in consecutive 102 switching cycles and was stable over 102 seconds without any observable degradation in the resistive switching states. In addition to this, the charge–magnetic flux curve was observed to be a single-valued function at a higher magnitude of the flux and became double valued at a lower magnitude of the flux. The conduction mechanism of the ZnO thin film memristive device followed the space charge limited current, and resistive switching was due to the filamentary resistive switching effect.
关键词： memristive device,doctor blade method,ZnO,resistive switching
更新于2025-09-23 15:23:52
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Magnetostrictive effect in micro-dotted FeCo film coated surface acoustic wave devices
摘要： The magnetostrictive effect in micro-dotted FeCo film coated surface acoustic wave (SAW) devices was demonstrated by solving coupling equations using the specific coupling of modes parameters extracted by FEM analysis. Dotted-pattern on FeCo thin-film proposed in this work contributes well to suppression in hysteresis effect by fully releasing the internal coericivity of the magnetistrictive FeCo thin-film. The theoretical demonstration was confirmed well by characterizing the constructed SAW magnetic devices with FeCo dots depositing along the SAW propagation path. Significantly improvements on suppression of hysteresis phenomenon were observed by characterizing the prepared FeCo dots coated SAW magnetic devices, higher magneto-sensitivity of 21.17 kHz mT?1, and lower hysteresis error of 0.82% were achieved successfully.
关键词： magnetostrictive effect,coupling of modes,hysteresis,micro-dotted FeCo film,SAW magnetic device
更新于2025-09-23 15:23:52
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Distributed Small-signal Equivalent Circuit Model and Parameter Extraction for SiGe HBT
摘要： In this paper, we present an improved high frequency small-signal distributed model for SiGe HBTs under forward-active mode based on the transmission line theory. The distributed nature of the transistor structure is taken into account in the proposed model. The single SiGe HBT is considered to be a cascade of many infinitesimal transistors, connected with the intrinsic base resistance. The closed-form solutions of admittance parameters for the distributed model are derived by solving the transmission line equation. With reasonable approximation and simplification, the model parameters are then directly extracted based on the nonlinear rational function fitting. The new improved distributed model and parameter extraction technique are validated with a 1×1.2×30 μm2 SiGe HBT from 100 MHz to 20.89 GHz. The simulated S-parameters in the proposed transmission line model are in close agreement with the measured data, and the frequency characteristics of the transistors are well predicted.
关键词： parameter extraction,rational function fitting,transmission line,SiGe HBT,Device modeling,small-signal model
更新于2025-09-23 15:23:52