- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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43- and 50-Mp High-Performance Interline CCD Image Sensors
摘要： This paper describes the design and performance of two new high-resolution interline charge-coupled device image sensors for use in industrial, machine vision, and aerial photography applications. These sensors feature 4.5-μm pixels, 4 outputs, fast dump gate, horizontal lateral overflow drain, and vertical electronic shutter. The 43-Mp sensor has a 35-mm optical format and the 50-Mp sensor has a larger format with a 2.175:1 aspect ratio that matches many modern mobile phone displays. This paper discusses the challenges and solutions to manufacture such large sensors with superior image quality such as uniformity, read noise, dark current, smear, transfer gate blooming, lag, and so on.
关键词： dark current,lithography stitching,interline transfer (IT),stepper,multiple outputs,image sensor,large format,charge-coupled device (CCD),smear,Blooming
更新于2025-09-23 15:22:29
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Wet NH3-Triggered NH2-MIL-125(Ti) Structural Switch for Visible Fluorescence Immunoassay Impregnated on Paper
摘要： This work has looked to explore an innovative and powerful visible fluorescence immunoassay method through wet NH3-triggered structural change of NH2-MIL-125(Ti) impregnated on paper for the detection of carcinoembryonic antigen (CEA). Gold nanoparticles heavily functionalized with glutamate dehydrogenase (GDH) and secondary antibody were used for generation of wet NH3 with a sandwiched immunoassay format. Paper-based analytical device (PAD) coated with NH2-MIL-125(Ti) exhibited good visible fluorescence intensity through wet NH3-triggeried structural change with high accuracy and reproducibility. Moreover, NH2-MIL-125(Ti)-based PAD displayed two visual modes of fluorescence color and physical color with naked eyes, and allowed the detection of CEA at a concentration as low as 0.041 ng mL-1. Importantly, the PAD-based assay provides promise for use in the mass production of miniaturized devices and opens new opportunities for protein diagnostics and biosecurity.
关键词： paper-based analytical device,NH2-MIL-125(Ti),visible fluorescence immunoassay,wet NH3,carcinoembryonic antigen
更新于2025-09-23 15:21:21
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Optimized Bent Part Coupling SiON Racetrack Resonators for Biological Sensing
摘要： In this work, we investigate the optimized parameters of bent part coupling silicon oxynitride (SiON) micro racetrack optical resonators coupled to a straight waveguide, for an efficient design of label free biosensor devices. A systematic engineering of waveguide-resonator characteristics, for optimum geometry and field-overlap with analytes is proposed. Different parameters of system such as coupling, intrinsic and total quality factors of Qκ , Qi, and Qt, sensitivity (S) and figure of merit (F OM ) or intrinsic limit of detection (ILOD), are examined with interest of taking into account the dispersion effect in calculations. To the best of our knowledge, considering dispersion effect in calculations, has been proposed for the first time in bent part coupling racetrack resonator based biosensors. We have shown the effective role of dispersion on the best optimized parameters of the biosensors. These investigations result in high amounts of S (435 nm/RIU) and Qt (≥45000), simultaneously for the proposed biosensors. The devices have been optimized for operation at wavelength of 850 nm. The biosensing performance of our biosensor, is compared with lately reported theoretical and experimental investigations. Based on the ILOD calculations, performance of our sensor structure, is improved by a factor of 0.10 compared to a resonator based biosensor, reported lately.
关键词： sensitivity,biosensor device,Dispersion,bent part coupling racetrack resonator,ILOD
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Development of ultrafast electronic oscillator by exploiting advantage of cold cathodes
摘要： Origin of the upper frequency limit in vacuum devices was investigated. New analytical theory was developed for a simple vacuum diode in which electrons are launched on a cathode surface and are accelerated or decelerated toward an anode by a DC-biased AC electric field. We found electrons or charge carriers collectively arrives on the anode surface regardless of the frequency of the AC electric field if a diode configuration and the electric field are manipulated with some parameter values given by our theoretical calculations. The extraordinary collective behavior of electrons exceeds the transit-time limit which has given the upper frequency barrier in transitional electronic devices. For the novel electron devices, cold cathodes which emit electrons by the field emission is preferable to conventional thermionic cathodes because of the high nonlinearity between the current and the applied voltage. We are expanding the principle to develop a novel electronic oscillator that can operate in the terahertz frequency regime which demands ultrafast physical phenomenon.
关键词： ultrafast,vacuum device,cold cathode,electronic oscillator,transit-time limit
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Improvement of Electron Emission Efficiency of Graphene-Oxide-Semiconductor Planar-Type Electron Sources for Nanosatellite Neutralizers
摘要： Planar-type electron sources based on a graphene-oxide-semiconductor (GOS) have great possibilities for neutralizer cathode on nanosatellites. To further improve their electron emission efficiency, suppression of the damage of the insulating layer by decreasing the temperature growth of graphene was investigated. Electron emission efficiency of the GOS device was improved to 23.6% from 1% by the low temperature growth of graphene at 800°C.
关键词： nanosatellites,electric propulsion,electron emission device,graphene
更新于2025-09-23 15:21:21
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New Uses of Micro and Nanomaterials || The Atomic Layer Deposition Technique for the Fabrication of Memristive Devices: Impact of the Precursor on Pre-deposited Stack Materials
摘要： Atomic layer deposition (ALD) is a standard technique employed to grow thin-film oxides for a variety of applications. We describe the technique and demonstrate its use for obtaining memristive devices. The metal/insulator/metal stack is fabricated by means of ALD-grown HfO2, deposited on top of a highly doped Si substrate with an SiO2 film and a Ti electrode. Enhanced device capabilities (forming free, self-limiting current, non-crossing hysteretic current-voltage features) are presented and discussed. Careful analysis of the stack structure by means of X-ray reflectometry, atomic force microscopy, and secondary ion mass spectroscopy revealed a modification of the device stack from the intended sequence, HfO2/Ti/SiO2/Si. Analytical studies unravel an oxidation of the Ti layer which is addressed for the use of the ozone precursor in the HfO2 ALD process. A new deposition process and the model deduced from impedance measurements support our hypothesis: the role played by ozone on the previously deposited Ti layer is found to determine the overall features of the device. Besides, these ALD-tailored multifunctional devices exhibit rectification capability and long enough retention time to deserve their use as memory cells in a crossbar architecture and multibit approach, envisaging other potential applications.
关键词： ReRAM,nonvolatile memory,complementary resistive switching cell,forming free memristive device,atomic layer deposition,redox-based resistive random access memory
更新于2025-09-23 15:21:21
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Parallel domain decomposition methods for a quantum-corrected drift–diffusion model for MOSFET devices
摘要： In this paper, we describe parallel domain decomposition methods based on the restricted additive Schwarz (RAS) method for a quantum-corrected drift-diffusion (QCDD) model for MOSFET devices. We have developed hybrid Message Passing Interface (MPI)/OpenMP parallelization algorithms of the QCDD system. For internode parallelization, two extensions of the RAS method are newly developed for the QCDD model. For intranode parallelization, we combine the conjugate gradient (CG) and BiCGSTAB procedures with a splitting-up operator method to realize parallelization of the incomplete factorization. The parallel numerical results for a three-dimensional Si bulk n-MOSFET on a multi-core NEC SX-ACE parallel computer are demonstrated. The intranode parallel numerical results are further evaluated on a many-core Cray XC40 parallel computer.
关键词： Restricted additive Schwarz method,Domain decomposition method,Numerical methods,Device simulation,Semiconductor,quantum-corrected drift–diffusion model
更新于2025-09-23 15:21:21
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Self-powered flexible electronics beyond thermal limits
摘要： Self-powered flexible electronics using high-performance inorganic materials have been studied and developed for the essence of future electronics due to the thing, lightweight, self-sustainable, and biocompatible characteristics, which can be applied to body sensor network and next generation Internet of Things (IoT). However, most of inorganic materials should be processed in the high-temperature processes such as the semiconductor fabrication, which is not compatible flexible plastic substrates. Therefore, the new approaches must be demonstrated to overcome the thermal limits of previous methodology and achieve the flexible inorganic electronics on various flexible plastic substrates. In this review paper, we introduce the recent progress of technologies to realize flexible and high-performance inorganic electronics on plastic substrates over the thermal limits, i.e., laser-assisted procedure, chemical or mechanical exfoliation approaches. They are compatible not only to flexible plastic substrates but also to conventional device processes. We also explain the novel application devices such as flexible optoelectronics, flexible large-scale integration (LSI) devices, flexible energy harvesters, and flexible sensors using the recent-developed technologies beyond the previous thermal limit. This paper highlights the proper direction to complete future flexible inorganic electronics for high-performance self-powered systems.
关键词： High-temperature process,Self-powered device,Exfoliation,System-on-plastic,Laser technology,Flexible electronics
更新于2025-09-23 15:21:21
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Comparative appraisal of global and local thresholding methods for binarisation of off-axis digital holograms
摘要： Binary digital and computer-generated holograms are used in a number of digital micromirror device (DMD) applications, including holographic displays, media characterisation, optical encryption, and others. Binarisation is one of the most simple and e?cient methods of hologram compression. In this paper, 12 local and 18 global thresholding techniques of di?erent groups were analysed and compared based on attribute similarity, clustering, entropy, histogram shape, and local adaptive factors. Optically recorded o?-axis digital holograms of di?erent objects were binarised using these methods. The amplitude quality of the obtained reconstructed images was compared using PSNR and SSIM values. The clustering-based methods achieved the highest quality. The results of binarisation by global and local methods were comparable on average.
关键词： Image binarisation,Hologram compression,Thresholding,Digital holography,Digital image processing,Digital micromirror device
更新于2025-09-23 15:21:21
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Artificial optic-neural synapse for colored and color-mixed pattern recognition
摘要： The priority of synaptic device researches has been given to prove the device potential for the emulation of synaptic dynamics and not to functionalize further synaptic devices for more complex learning. Here, we demonstrate an optic-neural synaptic device by implementing synaptic and optical-sensing functions together on h-BN/WSe2 heterostructure. This device mimics the colored and color-mixed pattern recognition capabilities of the human vision system when arranged in an optic-neural network. Our synaptic device demonstrates a close to linear weight update trajectory while providing a large number of stable conduction states with less than 1% variation per state. The device operates with low voltage spikes of 0.3 V and consumes only 66 fJ per spike. This consequently facilitates the demonstration of accurate and energy efficient colored and color-mixed pattern recognition. The work will be an important step toward neural networks that comprise neural sensing and training functions for more complex pattern recognition.
关键词： optic-neural synaptic device,human vision system,pattern recognition,energy efficiency,h-BN/WSe2 heterostructure
更新于2025-09-23 15:21:21