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Understanding degradation of organic light-emitting diodes from magnetic field effects
摘要: The impact of magnetic field effects on the electroluminescence of organic light-emitting diodes is commonly used to characterize exciton dynamics such as generation, annihilation, and performance degradation. However, interpreting these effects is challenging. Here, we show that magnetic field effects in organic light-emitting diodes can be understood in terms of the magnetic response of device characteristics derived from polaron-pair and triplet exciton quenching processes, such as triplet-polaron interactions and triplet-triplet annihilation. Device degradation shows a clear relationship with the amplitude of the magnetic field effects, enabling non-destructive measurement of the degradation. The results and proposed mechanism provide a better understanding of magnetic field effects on organic light-emitting diodes and device degradation phenomena.
关键词: magnetic field effects,device degradation,organic light-emitting diodes,triplet-polaron interactions,triplet-triplet annihilation,exciton dynamics
更新于2025-09-23 15:21:01
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Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing
摘要: The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN) high electron mobility transistors (HEMT) lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating power, device channel-case, thermal resistance, and baseplate temperature. We found that power or temperature alone could not explain difference in observed degradation, and that accelerated life tests employed by industry can bene?t by considering the impact of accelerating factors besides temperature. Speci?cally, we found that the voltage used to reach a desired power dissipation is important, and also that temperature acceleration alone or voltage alone (without much power dissipation) is insuf?cient to assess lifetime at operating conditions.
关键词: lifetime testing,device degradation,HEMT,gallium nitride,reliability
更新于2025-09-23 15:19:57