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[IEEE 2018 20th International Symposium on High-Current Electronics (ISHCE) - Tomsk, Russia (2018.9.16-2018.9.22)] 2018 20th International Symposium on High-Current Electronics (ISHCE) - Excitation of Diamonds by a Subnanosecond Runaway Electron Beam with an Electron Energy of Up to 200 keV Generated in a Nanosecond Gas Discharge
摘要： The emission spectra of different diamond samples excited by subnanosecond runaway electron beams (REBs) with an electron energy of up to 200 keV have been experimentally studied. Four diamond samples grown by different methods and one natural diamond were used. REBs were produced by two accelerators based on a gas diode. The effect of the REB parameters as well as the diamond growth method on the emission spectra have been established. The radiation of various bands was observed.
关键词： runaway electrons,cathodoluminescence,diamond,Cherenkov radiation
更新于2025-09-11 14:15:04
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Scaling up solid-state quantum photonics
摘要： A deterministic interface between a single atom and a single optical photon is the essential building block underpinning many quantum applications of light for quantum communication, sensing, and simulations. Light and matter interact weakly with each other, so the challenge is to create conditions enabling strong interactions. Fortunately, solid-state quantum photonics has matured dramatically, and it is possible to create artificial photonic nanostructures that markedly enhance light-matter coupling. Moreover, single atoms, which are cumbersome to control experimentally because they need to be trapped and cooled, can be replaced by solid-state quantum emitters such as vacancy centers in diamond, molecules, or quantum dots. The high quality and purity of these systems now imply that coherent and near-deterministic photon-emitter interfaces are routinely constructed, but it is still challenging to scale up and deterministically couple multiple quantum emitters. On page 662 of this issue, Evans et al. report on the successful coupling of two diamond silicon vacancy (SiV) quantum emitters mediated by their mutual coupling to a nanophotonic cavity. Radiative coupling leads to the formation of an entangled state between the two emitters.
关键词： diamond,entanglement,silicon vacancies,solid-state quantum photonics,quantum optics
更新于2025-09-11 14:15:04
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The Effect of Deposition Parameters on the Growth Rate of Microcrystalline Diamond Powders Synthesized by HFCVD Method
摘要： Conventional diamond powders (<10 μm) are generally produced from crushing large-sized diamonds synthesized by high-pressure and high-temperature (HPHT) technique, whereas they have many morphological imperfections. In the present work, these powders are served as diamond seeds and regrown by hot ?lament chemical vapor deposition (HFCVD). Deposition parameters—such as the carbon concentration, substrate temperature, and bias current—which play a determined role in the homoepitaxial growth rate of micron diamonds, are investigated in their respective usual ranges. As shown in the experimental results, under the preconditions of maintaining the good morphology of crystals and inhibiting polycrystal growth, the growth rate of isolated diamond crystals can be controlled at 0.9 μm/h. Besides, the ?nal improved powders have a wide range of particle sizes, which could fail to meet the requirements for commercial powders without the post-process of sieving.
关键词： CVD diamond powders,grain size distribution,homoepitaxial growth rate,deposition parameters
更新于2025-09-11 14:12:44
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Polycrystalline diamond films with tailored micro/nanostructure/doping for new large area film-based diamond electronics
摘要： This paper describes processes developed to change two key electrical properties (electrical resistivity and carrier type) of ultrananocrystalline diamond (UNCD) to microcrystalline diamond (MCD) films. The results show that the electrical properties of the investigated polycrystalline diamond films depend on the grain size and plasma treated grain boundary networks interfaces and external films’ surfaces, in which hydrogen, fluorine or nitrogen can be incorporated to tailor electrical carriers-type to tune the electrical properties. Exploring the feasibility of modulating the resistivity of polycrystalline diamond films via tailoring of grain size, surface chemistry and nitrogen or fluorine incorporation into films’ grain boundaries and external surfaces may enable applications of these diamond films as active or heat dissipation layers on micro/nano-electronic devices. This work can open the pathway to enabling an industrial process for new diamond-based electronics, since polycrystalline diamond films can be grown with extreme uniformity on 300 mm diameter Si wafers, used in manufacturing of current Si-based micro/nano-electronic devices.
关键词： Nitrogen incorporation,Diamond-based electronics,Electrical properties,Plasma treatment,Fluorine incorporation,Grain size,Polycrystalline diamond films
更新于2025-09-10 09:29:36
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Type IIa Diamond Formation
摘要： The petrological model of type IIa diamond formation is proposed. By the model these diamonds were formed from fluids on the last stages of kimberlite magma formation at 600–700°C and in the range of 20–30 kbar. The model explains the main specific of the type IIa diamonds. They are the enrichment of light carbon, low nitrogen content, the absence of silicate inclusions, the large size and cleanliness, a high degree of desorption.
关键词： type IIa diamond,petrological model,diamond formation,kimberlite magma
更新于2025-09-10 09:29:36
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Production of Polycrystalline Materials by Sintering of Nanodispersed Diamond Nanopowders at High Pressure. Review
摘要： The investigations dealing with the problems of forming polycrystalline materials with a high level of physical-and-mechanical properties using the method of diamond powder sintering at high pressure have been considered. The compacting mechanism of diamond nanopowders of different genesis under exposure to high pressure and high temperature is described, special features of pore structure formations are considered, and the critical role of the specified factor in sintering is shown. The need of degassing and modification of the diamond particle surface during the preparation for sintering is noted. The effectiveness of tungsten and its compounds is shown as an activating addition for producing wear-resistant thermostable diamond nanocomposites.
关键词： high pressure,nanopowders of tungsten and its compounds,diamond nanopowders,diamond nanocomposites,sintering
更新于2025-09-10 09:29:36
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Fragmentation and stress diversification in diamond powder under high pressure
摘要： Studying the fragmentation and re?nement of diamond powder as well as the diversi?cation in the intergranular stress is crucial to produce a high-quality polycrystalline diamond. In this paper, using different micron-size diamond powders as the initial materials, the samples were compressed under different pressures at ambient temperature. The fragmentation behavior of the diamond powder was investigated by scanning electron microscopy and with a laser particle size analyzer. The results show that the fragmentation of diamond comprises three stages with increasing pressure: (i) fracturing of edges and corners, (ii) cracking of the crystal plane, and (iii) re?nement of particle disorder; the particle deformation tends to become relatively stable after a certain pressure. In situ high-pressure synchrotron X-ray diffraction was used to study the intergranular stress distribution under non-hydrostatic compression to 35.1 GPa. A heterogeneous stress distribution was found in compressed diamond bulk, in which under the highest load, the maximum stress reached 69.5 GPa, whereas the minimum stress was only 18.8 GPa.
关键词： diamond powder,fragmentation,polycrystalline diamond,high pressure,intergranular stress
更新于2025-09-10 09:29:36
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Stability of diamond/Si bonding interface during device fabrication process
摘要： Diamond/Si bonding interface with an entire contact area and high thermal stability is achieved by surface activated bonding method. The fabrication of diamond field-effect transistors (FETs) on the diamond bonded to Si is demonstrated. The FET exhibits clear saturation and pinch-off characteristics. A 5 nm thick SixCx-1 layer was formed at the interface with annealing at 1000 °C. The layer was formed by the inter-diffusion of carbon and Si atoms near the bonding interface, which plays a role of residual stress relaxation between diamond and Si. These results suggest that diamond/Si heterostructures are applicable for combining diamond devices with Si LSI.
关键词： surface activated bonding,diamond/Si bonding,heterostructures,thermal stability,field-effect transistors
更新于2025-09-10 09:29:36
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Nanocarbon colloid produced by electro-spark discharge in ethanol for seeding the substrates in MPACVD synthesis of polycrystalline diamond films
摘要： We produced a nanocarbon colloid by electro-spark discharge as substrate seeding for microwave plasma-assisted chemical vapor deposition (MPACVD) synthesis of micro- and nano-crystalline diamond films and solid free-standing microcrystalline diamond plates. The colloid was produced by a specially designed device via a pulse electro-spark discharge in ethanol. The nanocrystalline diamond films and polycrystalline plates that were grown were examined by optical, SEM and TEM microscopies and Raman spectroscopy.
关键词： MPACVD,electro-spark discharge,nanocarbon colloid,polycrystalline diamond films
更新于2025-09-10 09:29:36
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Silicon Oxide-Rich Diamond-Like Carbon: A Conformal, Ultrasmooth Thin Film Material with High Thermo-Oxidative Stability
摘要： Silicon oxide-containing diamond-like carbon (a-C:H:Si:O) films are a promising class of protective coatings for environmentally-demanding applications owing to their lower residual stresses and superior thermal stability and oxidation resistance relative to undoped diamond-like carbon. However, existing versions of a-C:H:Si:O deposited by traditional methods such as plasma-enhanced chemical vapor deposition (PECVD) undergo substantial degradation and oxidation at temperatures above 250 °C. This, together with the difficulty of PECVD in depositing conformal coatings on complex geometries such as high-aspect-ratio features, has limited the applicability of a-C:H:Si:O. Here, the unique capabilities of plasma immersion ion implantation and deposition (PIIID) to grow silicon oxide-rich diamond-like carbon materials that are ultrasmooth, continuous, and conformal on high-aspect-ratio topographies are explored. The high concentration of silicon and oxygen in PIIID-grown films (23 ± 5 at.% and 11 ± 4 at.%, respectively) is unrivalled for this class of materials, and drastically increases the resistance to oxidation at high temperatures, compared with PECVD-grown films. The results open the path for using a-C:H:Si:O in applications involving exposure of materials to extreme environments.
关键词： ultrasmooth films,X-ray photoelectron spectroscopy (XPS),diamond-like carbon,NEXAFS,thermal stability
更新于2025-09-10 09:29:36