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Sb <sub/>2</sub> Te <sub/>3</sub> growth study reveals: Formation of Nanoscale Charge Carrier Domains Is an Intrinsic Feature Relevant for Electronic Applications
摘要： Sb2Te3 exhibits a plethora of fundamentally relevant electronic phenomena enabling electronic phase change memory cells, thermoelectric devices and three-dimensional topological insulator structures. Thus, the controlled growth of nanostructures and thin films with well-defined electronic properties is of uttermost importance. Previously, our group observed symmetric infrared domains in hexagonal Sb2Te3 nanoplatelets from a solvothermal chemical synthesis. The relative optical contrast observed was indirectly linked to the formation of regions with different defect densities (charge carrier concentrations). This raises two major questions, which we answer in this study: Is the domain formation restricted to the specific platelet growth process? No! Do the infrared spectra of both domains really follow a ‘Drude-like’ free charge carrier response? Yes! By controlling the initial water concentration, we promote the growth of the nanoplatelets in c-direction and tune the morphology from platelet-like to octahedra-like. Although the growth mode changes from spiral growth to layer-by-layer, similar infrared domains are identified using scattering-type scanning near-field optical microscopy (s-SNOM). Furthermore, we also reproduced the formation of symmetric infrared domains in thin, high quality crystalline films grown using molecular beam epitaxy (MBE). Normalized infrared near-field spectra of smaller Sb2Te3 nanoparticles reveal a relative shift of the plasma frequency in both domains. These findings demonstrate that the formation of domains with different charge carrier properties is an intrinsic material property of Sb2Te3 and might strongly influence all of its electronic applications.
关键词： infrared near-field microscopy,Antimony telluride,domain formation,van der Waals materials,transition metal dichalcogenides,epitaxial growth
更新于2025-09-23 15:21:21
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Photon-driven broadband emission and frequency comb RF injection locking in THz quantum cascade lasers
摘要： We present homogeneous quantum cascade lasers (QCLs) emitting around 3 THz which display bandwidths up to 950 GHz with a single stable beatnote. Devices are spontaneously operating in a harmonic comb state, and when in a dense mode regime they can be injection locked at the cavity roundtrip frequency with very small RF powers down to -55 dBm. When operated in the electrically unstable region of negative differential resistance, the device displays ultra-broadband operation exceeding 1.83 THz (?f /f = 50%) with high phase noise, exhibiting self-sustained, periodic voltage oscillations. The low CW threshold (115 A· cm?2) and broadband comb operation (?f /f = 25%) make these sources extremely appealing for on-chip frequency comb applications.
关键词： quantum cascade laser,terahertz,domain formation,injection locking,frequency comb
更新于2025-09-23 15:19:57
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Relaxation and domain formation in incommensurate two-dimensional heterostructures
摘要： We introduce con?guration space as a natural representation for calculating the mechanical relaxation patterns of incommensurate two-dimensional (2D) bilayers. The approach can be applied to a wide variety of 2D materials through the use of a continuum model in combination with a generalized stacking fault energy for interlayer interactions. We present computational results for small-angle twisted bilayer graphene and molybdenum disul?de (MoS2), a representative material of the transition-metal dichalcogenide family of 2D semiconductors. We calculate accurate relaxations for MoS2 even at small twist-angle values, enabled by the fact that our approach does not rely on empirical atomistic potentials for interlayer coupling. The results demonstrate the ef?ciency of the con?guration space method by computing relaxations with minimal computational cost. We also outline a general explanation of domain formation in 2D bilayers with nearly aligned lattices, taking advantage of the relationship between real space and con?guration space. The con?guration space approach also enables calculation of relaxations in incommensurate multilayer systems.
关键词： incommensurate,domain formation,MoS2,bilayers,two-dimensional,relaxation,graphene
更新于2025-09-09 09:28:46