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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell
摘要： The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while ?ll factors (FF) are above 80%. At one-sun illumination, reducing one junction’s bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5% ef?ciency loss). These results demonstrate the potential of the HBTSC concept to produce high-ef?ciency independently connected double-junction solar cells.
关键词： photovoltaic cells,independent current,multi terminal,gallium indium phosphide,gallium arsenide,double junction
更新于2025-09-23 15:21:01
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Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells
摘要： By using the sacrificial layer (SL) etching, GaAs substrates are separated from III–V epi substrate//Si substrate junctions that are made by surface activated bonding (SAB) technologies. The post-bonding low-temperature (300-?C) annealing plays an essential role in achieving a promising (～90%) bonding yield. The effects of the post-bonding annealing are investigated by hard X-ray photoemission spectroscopy and current–voltage measurements of GaAs//Si bonding interfaces. It is found that the concentration of oxygen atoms at interfaces is reduced and the resistance decreases to 1.6–2.1 m??cm2 by the low-temperature annealing. Aluminum fluoride complexes are not observed by X-ray photoelectron spectroscopy on the exposed surfaces of separated GaAs substrates. The roughness average of the surfaces is ≈0.25–0.30 nm. The characteristics of double junction cells fabricated on the GaAs//Si junctions prepared by the SL etching are almost the same as those of cells fabricated by dissolving GaAs substrates after bonding. These results indicate that multijunction cells could be fabricated in a process sequence compatible with reuse of GaAs substrates by combining the SL etching and SAB.
关键词： Sacrificial layer etching,GaAs//Si double junction cells,Surface activated bonding,Low temperature annealing,Epitaxial lift-off
更新于2025-09-23 15:19:57
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Effect of tunnel junction grown at different growth rates on the optical properties and improved efficiency of InGaP/GaAs double-junction solar cells
摘要： The optical properties of InGaP/GaAs double-junction solar cells (DJSCs) grown by metalorganic chemical vapor deposition were investigated using temperature- and excitation power-dependent photoluminescence (PL) measurements. The InGaP/GaAs DJSC samples studied were the same structures; however, the corresponding tunnel junctions were grown at different growth rates (1.0 and 1.5 ?/s). The PL spectrum measured at 10 K for both samples exhibited a strong main peak at ~1.97 eV with a weak shoulder peak at ~1.94 eV, which could be attributed to the emissions of disordered and ordered InGaP, respectively. A PL peak located at ~1.91 eV was observed under a low excitation power, originating from the donoreacceptor pair (DAP) transition. With the increase in the temperature, the emission related to the DAP of the sample grown at a growth rate of 1.0 ?/s was found to be less dominant compared with the sample grown at a growth rate of 1.5 ?/s. The power-conversion ef?ciency of the sample grown at a growth rate of 1.0 ?/s was improved compared to that of the sample grown at a growth rate of 1.5 ?/s, owing to fewer defect states. Our results help understand the luminescence properties of InGaP/GaAs DJSCs, which could be a crucial factor in fabricating high-ef?ciency solar cells.
关键词： InGaP/GaAs,Growth rate,Photoluminescence,Double-junction solar cell
更新于2025-09-23 15:19:57
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The Effect of Adsorbent Layer Thickness and Gallium Concentration on the Efficiency of a Dual-Junction Copper Indium Gallium Diselenide Solar Cell
摘要： The split of the sunlight spectrum by the bandgap energy of multi-junction solar cells is a highly effective way to increase solar cell ef?ciency. The reason is that the energy of photons is effectively absorbed, and there is a reduction in solar cell loss. In this contribution, we report on the performance of a double-junction copper gallium diselenide/copper indium gallium diselenide (CGS/CIGS) solar cell with a cadmium sul?de (CdS) buffer layer simulator. The J–V characteristics and the external quantum ef?ciency were simulated under AM1.5 illumination. Increased ef?ciency was seen as a result of the change in the thickness of layers and different molar ratio amounts of gallium, and the optimal amount of each factor was obtained. In this study, a single CGS solar cell was used as the top cell and a single CIGS solar cell as the bottom cell in the tandem con?guration, which showed conversion ef?ciencies of 16.175% and 15.696%, respectively. Finally, solar cell ef?ciency of 32.3% was obtained in the double-junction state, an increase of 6% compared with the reference cell.
关键词： CGS/CIGS double-junction solar cells,Numerical simulation,ef?ciency,four-terminal solar cell
更新于2025-09-11 14:15:04